Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Paweł Prystawko"'
Autor:
Justinas Jorudas, Paweł Prystawko, Artūr Šimukovič, Ramūnas Aleksiejūnas, Jūras Mickevičius, Marcin Kryśko, Paweł Piotr Michałowski, Irmantas Kašalynas
Publikováno v:
Materials, Vol 15, Iss 3, p 1118 (2022)
A quaternary lattice matched InAlGaN barrier layer with am indium content of 16.5 ± 0.2% and thickness of 9 nm was developed for high electron mobility transistor structures using the metalorganic chemical-vapor deposition method. The structural, mo
Externí odkaz:
https://doaj.org/article/7f306e5799b74dddb7626d020b0010b4
Autor:
Emanuela Schilirò, Filippo Giannazzo, Salvatore Di Franco, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Paweł Prystawko, Piotr Kruszewski, Mike Leszczynski, Ildiko Cora, Béla Pécz, Zsolt Fogarassy, Raffaella Lo Nigro
Publikováno v:
Nanomaterials, Vol 11, Iss 12, p 3316 (2021)
This paper reports an investigation of the structural, chemical and electrical properties of ultra-thin (5 nm) aluminum nitride (AlN) films grown by plasma enhanced atomic layer deposition (PE-ALD) on gallium nitride (GaN). A uniform and conformal co
Externí odkaz:
https://doaj.org/article/a9858e6ab40d4aa7b1d090ced9cb63e6
Autor:
Yevhen Yashchyshyn, Paweł Bajurko, Jakub Sobolewski, Pavlo Sai, Aleksandra Przewłoka, Aleksandra Krajewska, Paweł Prystawko, Maksym Dub, Wojciech Knap, Sergey Rumyantsev, Grzegorz Cywiński
Publikováno v:
Micromachines, Vol 12, Iss 11, p 1343 (2021)
RF switches, which use a combination of graphene and two-dimensional high-density electron gas (2DEG) in the AlGaN/GaN system, were proposed and studied in the frequency band from 10 MHz to 114.5 GHz. The switches were integrated into the coplanar wa
Externí odkaz:
https://doaj.org/article/cbabf0660096441fa046235204206fc5
Autor:
Maksym Dub, Pavlo Sai, Maciej Sakowicz, Lukasz Janicki, Dmytro B. But, Paweł Prystawko, Grzegorz Cywiński, Wojciech Knap, Sergey Rumyantsev
Publikováno v:
Micromachines, Vol 12, Iss 6, p 721 (2021)
AlGaN/GaN fin-shaped and large-area grating gate transistors with two layers of two-dimensional electron gas and a back gate were fabricated and studied experimentally. The back gate allowed reducing the subthreshold leakage current, improving the su
Externí odkaz:
https://doaj.org/article/18236b22045d440a98aaae54c43a929e
Autor:
Roman B. Adamov, Daniil Pashnev, Vadim A. Shalygin, Maria D. Moldavskaya, Maxim Ya. Vinnichenko, Vytautas Janonis, Justinas Jorudas, Saulius Tumėnas, Paweł Prystawko, Marcin Krysko, Maciej Sakowicz, Irmantas Kašalynas
Publikováno v:
Applied Sciences, Vol 11, Iss 13, p 6053 (2021)
Terahertz time-domain spectroscopy and Fourier-transform infrared spectroscopy were developed as the method for the investigation of high-frequency characteristics of two-dimensional electron gas and GaN:C buffer layers in AlGaN/AlN/GaN heterostructu
Externí odkaz:
https://doaj.org/article/64ac112ad0bd49d2b0e4940c6e17e821
Autor:
Justinas Jorudas, Artūr Šimukovič, Maksym Dub, Maciej Sakowicz, Paweł Prystawko, Simonas Indrišiūnas, Vitalij Kovalevskij, Sergey Rumyantsev, Wojciech Knap, Irmantas Kašalynas
Publikováno v:
Micromachines, Vol 11, Iss 12, p 1131 (2020)
We report on the high-voltage, noise, and radio frequency (RF) performances of aluminium gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN buffer. Such a GaN–SiC hybrid material was developed in order to i
Externí odkaz:
https://doaj.org/article/6ec2e3a2a5904a008f738fa7924af970
Autor:
Maksym Dub, Pavlo Sai, Aleksandra Przewłoka, Aleksandra Krajewska, Maciej Sakowicz, Paweł Prystawko, Jacek Kacperski, Iwona Pasternak, Grzegorz Cywiński, Dmytro But, Wojciech Knap, Sergey Rumyantsev
Publikováno v:
Materials, Vol 13, Iss 18, p 4140 (2020)
Electrical and noise properties of graphene contacts to AlGaN/GaN heterostructures were studied experimentally. It was found that graphene on AlGaN forms a high-quality Schottky barrier with the barrier height dependent on the bias. The apparent barr
Externí odkaz:
https://doaj.org/article/24917325f4504ac285bcd6936580ad93
Autor:
Wojciech Wojtasiak, Marcin Góralczyk, Daniel Gryglewski, Marcin Zając, Robert Kucharski, Paweł Prystawko, Anna Piotrowska, Marek Ekielski, Eliana Kamińska, Andrzej Taube, Marek Wzorek
Publikováno v:
Micromachines, Vol 9, Iss 11, p 546 (2018)
AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobilit
Externí odkaz:
https://doaj.org/article/3b8d577d5d7240e7ba84e212384c9c80
Publikováno v:
Journal of Applied Physics. 133
Electro-optical modulation of a terahertz beam by drifting space-charge domains in n-GaN epilayers under pulsed electric field excitation was found and investigated at a temperature of 77 K. The free charge carrier contribution was observed as the at
Autor:
Katarzyna Drozdowska, Sergey Rumyantsev, Janusz Smulko, Andrzej Kwiatkowski, Pavlo Sai, Paweł Prystawko, Aleksandra Krajewska, Grzegorz Cywiński
Publikováno v:
Sensors and Actuators B: Chemical. 381:133430