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Akademický článek

Topological material in the III–V family: Heteroepitaxial InBi on InAs

Autor: Laurent Nicolaï, Ján Minár, Maria Christine Richter, Olivier Heckmann, Jean-Michel Mariot, Uros Djukic, Johan Adell, Mats Leandersson, Janusz Sadowski, Jürgen Braun, Hubert Ebert, Jonathan D. Denlinger, Ivana Vobornik, Jun Fujii, Pavol Šutta, Gavin R. Bell, Martin Gmitra, Karol Hricovini

Publikováno v: Physical Review Research, Vol 6, Iss 4, p 043116 (2024)

InBi(001) is formed epitaxially on InAs(111)-A by depositing Bi onto an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the M[over ¯] high symmetry point. This demonstrates a heteroep

Externí odkaz: https://doaj.org/article/7a2be8806b5f462bbbd08e8810ec0cc2

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Akademický článek

On Some Ambiguities of the Absorption Edge and Optical Band Gaps of Amorphous and Polycrystalline Semiconductors

Autor: Jarmila Mullerova, Pavol Sutta

Publikováno v: Communications, Vol 19, Iss 3, Pp 9-15 (2017)

This paper reports on somewhat puzzling character of the determination of the optical band gap energies of amorphous and polycrystalline semiconductors, where probably the mixed-phase composition and structural and compositional disorder are main rea

Externí odkaz: https://doaj.org/article/1885b9dd35544618b641f84c93f0e297

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Akademický článek

On Nanometer Ordering in thin Amorphous Hydrogenated Silicon

Autor: Jarmila Mullerova, Veronika Vavrunkova, Pavol Sutta

Publikováno v: Advances in Electrical and Electronic Engineering, Vol 7, Iss 1 - 2, Pp 369-372 (2008)

We investigated thin films of amorphous hydrogenated silicon (a-Si:H) deposited by PECVD under increasingdilutions of silane plasma by hydrogen. We found out that under increasing additional hydrogen at the depositions, thin filmsobtain less hydrogen

Externí odkaz: https://doaj.org/article/92bf7720adad4c3f969144466e77e4b5

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Akademický článek

Thin-Film Silicon in Photovoltaics: The Role of Structure and Microstructure

Autor: Jarmila Mullerova, Pavol Sutta, Stanislav Jurecka

Publikováno v: Communications, Vol 8, Iss 1, Pp 5-9 (2006)

Structure and microstructure of hydrogenated silicon thin films and the influence of the hydrogen dilution of silane plasma at the PEVCD deposition on the film properties were investigated. The results show that at dilution between 20 and 30 the tran

Externí odkaz: https://doaj.org/article/acd6d4b87d4348f4938565ecba2c9d99

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Akademický článek

ZnO Nanostructures Prepared by RF Sputtering

Autor: Sona Flickyngerova, Vladimir Tvarozek, Ivan Novotny, Alexander Satka, Pavol Sutta

Publikováno v: Advances in Electrical and Electronic Engineering, Vol 5, Iss 1, Pp 330-333 (2006)

ZnO is shortly reviewed as significant material for nanotechnology. Sputtered ZnO thin films showed colummarpolycrystalline structure with preffered orientation in direction, resistivity ~ 1 Wcm and optical bandgap Eg = 3,33 eV. Nanoclusters of Au an

Externí odkaz: https://doaj.org/article/3df483cb82444943b88cefa8be8704d0

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Akademický článek

Lattice and Micro-Strains in Polycrystalline Silicon Films Deposited on Ceramic Substrates

Autor: Quido Jackuliak, Pavol Sutta

Publikováno v: Advances in Electrical and Electronic Engineering, Vol 2, Iss 2, Pp 20-25 (2003)

X-ray diffraction analysis indicated that the all silicon films are polycrystalline. The preferred orientation of silicon films deposited on SiAlON is almost i [110] direction perpendicular to substrate, whereas the preferred orientation of the silic

Externí odkaz: https://doaj.org/article/2a67c6dc2ddf4e73810e7852d823243c

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