Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Pavol Pisecny"'
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 3, Iss 2, Pp 269-272 (2004)
The formation and annealing of radiation-induced defects in MOS structures exposed to 710 MeV Bi ions and 305 MeV Kr ions radiation with a fluency of 10^9 and 10^10cm^2 have been studied by capacitance methods. Electrical activity of the defects has
Externí odkaz:
https://doaj.org/article/bfb96ccf49ac472c91c7709cfb9ec855
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 5, Iss 1, Pp 334-336 (2006)
The article presents the results of capacitance measurements on MOS structures with a silicon substrate that wasdoped by nitrogen during the growth of the single crystal by Czochralski’s method. Attention is paid to the energydistribution of the tr
Externí odkaz:
https://doaj.org/article/7d8c46618c85487f989907aff5f763b5
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 3, Iss 2, Pp 305-307 (2004)
The quality of momentus technological steps in unipolar power devices manufactoring was examine by means of capacitance and current measurements using a metal-oxide-semiconductor capacitors (MOS-C). From the low- (If) and high-frequency (hf) capacita
Externí odkaz:
https://doaj.org/article/6e22d461a0ad4fff96af0b260be15c49
Autor:
Jia Tao Zhang
Selected, peer reviewed papers from the 2012 SREE Conference on Advanced Materials and Engineering Applications (AMEA 2012), May 5-6, 2012, Hong Kong
Selected, peer reviewed papers from the 2012 International Conference on Energy and Environmental Protection (ICEEP 2012), June 23-24, 2012, Hohhot, China