Zobrazeno 1 - 10
of 80
pro vyhledávání: '"Pavol Boháček"'
Autor:
Alexander P. Kobzev, Pavol Boháček, Angela Kleinová, Vlasta Sasinková, J. Huran, Miroslav Mikolášek
Publikováno v:
Current Applied Physics. 34:101-106
Photoelectrochemical water splitting devices require semiconductor photoelectrode material fulfilling a number of primary requirements such as band gap, band edge alignment and corrosion resistance to electrolyte. Amorphous silicon carbide films, und
Autor:
Bohumír Zaťko, Ladislav Hrubčín, Pavol Boháček, Yurij Borisovič Gurov, Sergej Vladimirovič Rozov, Sergej Alexandrovič Evseev, Maxim Viktorovič Bulavin, Nikolaj Ivanovič Zamiatin, Yurij Andrejevič Kopylov, Mária Sekáčová, Eva Kováčová
Publikováno v:
AIP Conference Proceedings.
Publikováno v:
AIP Conference Proceedings.
Autor:
Yu. B. Gurov, I. Rozova, V. G. Sandukovsky, Bohumír Zat’ko, Vladimir A. Skuratov, Pavol Boháček, S. V. Rozov, L. Hrubčín
Publikováno v:
Physics of Atomic Nuclei. 82:1682-1685
The properties of detectors based on epitaxial layers of silicon carbide (SiC) are presented. It is shown that the developed detectors have good spectrometric characteristics when detecting a particles with energies of up to 8 MeV. The pulse height d
Publikováno v:
Applied Surface Science. 461:242-248
In this contribution we have focused on comparison of spectroscopic properties of semi-insulating (SI) GaAs and 4H-SiC detectors of thermal neutrons fabricated at the Institute of Electrical Engineering SAS in Piesťany. 6LiF reactive film has been a
Autor:
František Dubecký, Mária Sekáčová, Bohumír Zaťko, Zdenko Zápražný, Pavol Boháček, Dušan Korytár, Vladimir A. Skuratov, K. Sedlackova, J. Osvald, A. Sagatova, Vladimír Nečas, L. Hrubčín
Publikováno v:
Applied Surface Science. 461:276-280
In this work we have focused on characterization of the surface barrier detectors on high quality 4H-SiC epitaxial layer. The thickness of the layer was 70 μm and the diameter of circular Au/Ni Schottky contact was 2 mm. The forward and the reverse
Autor:
Vladimír Nečas, František Dubecký, Tu Ly Anh, Bohumír Zaťko, Zdenko Zápražný, K. Sedlackova, A. Sagatova, Pavol Boháček
Publikováno v:
Applied Surface Science. 461:3-9
Our research in the field of bulk SI (semi-insulating) GaAs detectors for digital imaging has taken almost 20 years. We have optimized the process of detector fabrication and improved the detector quality in terms of its detection properties. We have
Autor:
Mária Sekáčová, Pavol Boháček, Vladimir A. Skuratov, Eva Kováčová, A. Sagatova, Bohumír Zaťko, L. Hrubčín, Yurij Borisovič Gurov, Oleg Michajlovič Ivanov
Publikováno v:
APPLIED PHYSICS OF CONDENSED MATTER (APCOM 2021).
We fabricated and studied 4H-SiC Schottky diodes based on high quality epitaxial layer. We used two different thicknesses of the epitaxial layer, 25 μm and 50 μm. Detectors have Ni Schottky contacts with 3 mm of diameter. The current voltage charac
Autor:
Pavel Hubík, Mária Sekáčová, Pavol Boháček, Vladimír Nečas, Bohumír Zat’ko, Gabriel Vanko, A. Sagatova, F. Dubecky
Publikováno v:
2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM).
We present an anomal current decrease for Mg contact on semi-insulating (SI) GaAs. The explanation of the observed effect is discussed within the light of the observed transport characteristics and XPS analysis.
Publikováno v:
2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM).
In this paper we have focused on characteristics of detectors based on 4H-SiC semiconductor. The typical thickness of the active layer was between 25 ×m and 100 ×m. Circular Schottky contacts with diameters of 2.0 mm and 3.0 mm were prepared by eva