Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Pavol, Sutta"'
Autor:
Jarmila Mullerova, Pavol Sutta
Publikováno v:
Communications, Vol 19, Iss 3, Pp 9-15 (2017)
This paper reports on somewhat puzzling character of the determination of the optical band gap energies of amorphous and polycrystalline semiconductors, where probably the mixed-phase composition and structural and compositional disorder are main rea
Externí odkaz:
https://doaj.org/article/1885b9dd35544618b641f84c93f0e297
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 7, Iss 1 - 2, Pp 369-372 (2008)
We investigated thin films of amorphous hydrogenated silicon (a-Si:H) deposited by PECVD under increasingdilutions of silane plasma by hydrogen. We found out that under increasing additional hydrogen at the depositions, thin filmsobtain less hydrogen
Externí odkaz:
https://doaj.org/article/92bf7720adad4c3f969144466e77e4b5
Publikováno v:
Communications, Vol 8, Iss 1, Pp 5-9 (2006)
Structure and microstructure of hydrogenated silicon thin films and the influence of the hydrogen dilution of silane plasma at the PEVCD deposition on the film properties were investigated. The results show that at dilution between 20 and 30 the tran
Externí odkaz:
https://doaj.org/article/acd6d4b87d4348f4938565ecba2c9d99
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 5, Iss 1, Pp 330-333 (2006)
ZnO is shortly reviewed as significant material for nanotechnology. Sputtered ZnO thin films showed colummarpolycrystalline structure with preffered orientation in direction, resistivity ~ 1 Wcm and optical bandgap Eg = 3,33 eV. Nanoclusters of Au an
Externí odkaz:
https://doaj.org/article/3df483cb82444943b88cefa8be8704d0
Autor:
Quido Jackuliak, Pavol Sutta
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 2, Iss 2, Pp 20-25 (2003)
X-ray diffraction analysis indicated that the all silicon films are polycrystalline. The preferred orientation of silicon films deposited on SiAlON is almost i [110] direction perpendicular to substrate, whereas the preferred orientation of the silic
Externí odkaz:
https://doaj.org/article/2a67c6dc2ddf4e73810e7852d823243c
Autor:
Vladimir Tvarozek, Pavol Sutta, Sona Flickyngerova, Ivan Novotny, Pavol Gaspierik, Marie Netrvalova, Erik Vavrinsky
Publikováno v:
Semiconductor Technologies
AZO thin films sputtered at power density of 4.4 x 104 W/m2, substrate temperature of 200ºC and annealed in the forming gas at 400ºC showed a highly (002) oriented crystalline structure with the larger grains. Optimal substrate temperature could no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd0e9fc9976a69049d5f45255a46cf74
http://www.intechopen.com/articles/show/title/preparation-of-transparent-conductive-azo-thin-films-for-solar-cells
http://www.intechopen.com/articles/show/title/preparation-of-transparent-conductive-azo-thin-films-for-solar-cells
Autor:
Krasimira S. Shtereva, Ivan Novotny, Vladimir Tvarozek, Pavol Sutta, Andrej Vincze, Chris Jeynes, Nianhua Peng, Marian Vojs, Sona Flickyngerova
Publikováno v:
ECS Meeting Abstracts. :922-922
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3dd4629d1615cff874f7194ac99fa5c
https://doi.org/10.1149/ma2012-01/22/922
https://doi.org/10.1149/ma2012-01/22/922
Publikováno v:
ECS Meeting Abstracts. :2339-2339
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03c15dc040c1e10907aef4118ed54e78
https://doi.org/10.1149/ma2009-02/30/2339
https://doi.org/10.1149/ma2009-02/30/2339
Autor:
Rostislav, Medlin, Jan, Minar, Pavol, Sutta, Wilayat, Khan, Ondrej, Sipr, Petr, Novak, Marie, Netrvalova
Publikováno v:
Microscopy & Microanalysis; 2017 Special issue, Vol. 23, p1686-1687, 2p, 2 Graphs