Measurement of thermoelectric parameters of thin-film semiconductor materials using the Harman method

Autor: Tur, Y. V., Pavlovskyi, Y. V., Virt, I. S.

Publikováno v: Physics and Chemistry of Solid State; Vol 20, No 3 (2019); 306-310
Фізика і хімія твердого тіла; Vol 20, No 3 (2019); 306-310

For the analysis of the measurement of thermoelectric parameters of semiconductors, the Harman pulsed method was used. The authors propose a new approach to determine the thermoelectric quality factor of thin semiconductor films in the temperature in

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http://journals.pu.if.ua/index.php/pcss/article/view/3974