Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Pavel Yunin"'
Autor:
Vera Kalygina, Sergey Podzyvalov, Nikolay Yudin, Elena Slyunko, Mikhail Zinoviev, Vladimir Kuznetsov, Alexey Lysenko, Andrey Kalsin, Victor Kopiev, Bogdan Kushnarev, Vladimir Oleinik, Houssain Baalbaki, Pavel Yunin
Publikováno v:
Crystals, Vol 13, Iss 8, p 1203 (2023)
The data on electrical and photoelectric characteristics of Ga2O3/ZnGeP2 hetero-structures formed by RF magnetron sputtering Ga2O3 target with a purity of (99.99%) were obtained. The samples are sensitive to UV radiation with a wavelength of λ = 254
Externí odkaz:
https://doaj.org/article/71c847a83cd44c49b1ed98639720f213
Autor:
Oskar Koifman, Andrey Koptyaev, Vlad Travkin, Pavel Yunin, Nikolay Somov, Dmitry Masterov, Georgy Pakhomov
Publikováno v:
Colloids and Interfaces, Vol 6, Iss 4, p 77 (2022)
As a follow-up to our study on aggregation of metal-etioporphyrin complexes (Colloids Surf. A. Physicochem. Eng. Asp. 2022, 648, 129284), we considered thin films of three isomers of copper(II) etioporphyrin deposited on hot substrates. Despite the a
Externí odkaz:
https://doaj.org/article/6f11529fdcf247c79b7753b22f346298
Autor:
Yury Buzynin, Vladimir Shengurov, Boris Zvonkov, Alexander Buzynin, Sergey Denisov, Nikolay Baidus, Michail Drozdov, Dmitry Pavlov, Pavel Yunin
Publikováno v:
AIP Advances, Vol 7, Iss 1, Pp 015304-015304-6 (2017)
We developed high quality 2-inch GaAs/Ge/Si (100) epitaxial substrates, which may be used instead of GaAs monolithic substrates for fabrication of solar cells, photodetectors, LEDs, lasers, etc. A 200–300 nm Ge buffer layer was grown on Si substrat
Externí odkaz:
https://doaj.org/article/3eef9679526441e1b697583ab7adba4d
Autor:
Nikolay Baidus, Vladimir Aleshkin, Alexander Dubinov, Konstantin Kudryavtsev, Sergei Nekorkin, Alexey Novikov, Dmiriy Pavlov, Artem Rykov, Artem Sushkov, Mikhail Shaleev, Pavel Yunin, Dmitriy Yurasov, Zakhariy Krasilnik
Publikováno v:
Crystals, Vol 8, Iss 8, p 311 (2018)
The paper presents the results of the application of MOCVD growth technique for formation of the GaAs/AlAs laser structures with InGaAs quantum wells on Si substrates with a relaxed Ge buffer. The fabricated laser diodes were of micro-striped type de
Externí odkaz:
https://doaj.org/article/0826fb52903b456ea8e23d4ab3acd2f0
Autor:
Artemy Atepalikhin, Mariya Markina, Valerian Edelman, Anton Vdovin, Kirill Mineev, Pavel Yunin, Anatoly Grunin, Mikhail Tarasov, Denis Yunin, Aleksandra Gunbina, Lyudmila Filippenko, Ekaterina Golikhina, Valery Koshelets, Mariya Shevchenko, Vyacheslav Vdovin
Publikováno v:
2022 IEEE 8th All-Russian Microwave Conference (RMC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::199a229054f780483f38f4cef0052990
https://doi.org/10.1109/rmc55984.2022.10079335
https://doi.org/10.1109/rmc55984.2022.10079335
Autor:
Leonid Mochalov, Alexander Logunov, Igor Prokhorov, Maksim Vshivtsev, Mikhail Kudryashov, Yulia Kudryashova, Vladimir Malyshev, Yulia Spivak, Evgeny Greshnyakov, Alexander Knyazev, Diana Fukina, Pavel Yunin, Vyacheslav Moshnikov
Publikováno v:
Optical and Quantum Electronics. 54
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e16195523892d1e692ad452f365722b
https://doi.org/10.1007/s11082-022-03979-z
https://doi.org/10.1007/s11082-022-03979-z
Autor:
Nikolay Starostin, Tatyana S. Sazanova, Alexander Logunov, Glenn D. Boreman, Aleksey Letnianchik, Leonid Mochalov, Pavel Yunin, Sergey Zelentsov, Aleksey Kudrin, Vladimir M. Vorotyntsev, Igor Prokhorov
Publikováno v:
Plasma Chemistry and Plasma Processing. 41:493-506
Lead sulfide (PbS) thin films of different morphology were synthesized via direct interaction of lead and sulfur vapors. Low temperature nonequilibrium RF (40.68 MHz) plasma discharge at low pressure ((3–5) × 10–3 Torr) was used for the initiati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::658341c3cfd662d528c6e5c273d53781
https://doi.org/10.1007/s11090-020-10123-w
https://doi.org/10.1007/s11090-020-10123-w
Autor:
Vladimir Fedorov, Liliia N. Dvoretckaia, Alexey M. Mozharov, Sergey V. Fedina, Demid A. Kirilenko, Tamara N. Berezovskaya, Nikolai N. Faleev, Pavel Yunin, Mikhail N. Drozdov, Ivan S. Mukhin
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::746a2f8ac3cbf089e32ce2d8a2beef71
https://doi.org/10.2139/ssrn.4314788
https://doi.org/10.2139/ssrn.4314788
Autor:
Mariya Karaeva, Dmitriy Savinykh, Albina Orlova, Sergei Khainakov, Aleksey Nokhrin, Maksim Boldin, Santiago Garcia-Granda, Artem Murashov, Vladimir Chuvil’deev, V.A. Skuratov, Nikita Kirilkin, Pavel Yunin, Nataliya Tabachkova
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd149091969893e2832ce474d8ef7ee9
https://doi.org/10.2139/ssrn.3966993
https://doi.org/10.2139/ssrn.3966993
Autor:
V. M. Malyshev, Alexander Y. Polyakov, Leonid Mochalov, Pavel Yunin, Mikhail Kudryashov, Igor Prokhorov, Alexander Logunov, Ilya Vorotuntsev, Stephen J. Pearton, V. I. Pryakhina, Tatiana Sazanova
Publikováno v:
ECS Journal of Solid State Science and Technology. 10:073002
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54d7b5d079a2b8bf485a2e242b414688
https://doi.org/10.1149/2162-8777/ac0e11
https://doi.org/10.1149/2162-8777/ac0e11