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Autor:
Stanislav A. Evlashin, Sarkis A. Dagesian, R. A. Khmelnitsky, Alexey A. Gippius, Alexandr A. Alekseev, Nikolay V. Suetin, V. P. Martovitsky, Pavel V. Pastchenko
Publikováno v:
Crystal Growth & Design. 16:1420-1427
Growth of perfect heteroepitaxial metal layers on diamond can extend applications of diamond in microelectronics and open new areas for its use in devices with unique electrical properties for operations at elevated temperatures and in harsh environm