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Autor:
A. A. Sigarev, Denis I. Myakota, Andrey M. Markeev, Cheol Seong Hwang, Vladimir A. Gritsenko, Sergey S. Zarubin, Dmitry S. Kuzmichev, Pavel S. Chizov, Timofey V. Perevalov, K. V. Egorov
Publikováno v:
Journal of Materials Chemistry C. 6:9667-9674
The growth per cycle saturation behaviors depending on the precursor pulse duration, reactant pulse duration, and reactant concentration were examined for hydrogen radical enhanced atomic layer deposition (REALD) of TaOx using tantalum-ethoxide as th