Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Pavel L. Komarov"'
Autor:
Marko J. Tadjer, Peter E. Raad, Pavel L. Komarov, Karl D. Hobart, Tatyana I. Feygelson, Andrew D. Koehler, Travis J. Anderson, Anindya Nath, Bradford Pate, Fritz J. Kub
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 922-930 (2018)
A novel wet etch process for fabrication of large-area AlGaN/GaN membranes is reported, along with an evaluation of membrane-high electron mobility transistor (HEMT) electrothermal performance up to 1.9 W/mm. Hall measurements showed negligible post-
Externí odkaz:
https://doaj.org/article/966cd82acf0a405d973ec34e45297cfa
Autor:
Tatyana I. Feygelson, Peter E. Raad, Assaad El Helou, Pavel L. Komarov, Marko J. Tadjer, Travis J. Anderson, Daniel A. Francis, Bradford B. Pate, Karl D. Hobart
Publikováno v:
IEEE Transactions on Electron Devices. 67:5415-5420
Gallium nitride (GaN) high electron-mobility transistors (HEMTs) offer considerable high-power operation but suffer in reliability due to potentially damaging self-heating. In this study, self-heating in AlGaN/GaN HEMTs on high conductivity substrate
Autor:
Minghan Xian, Fan Ren, Marko J. Tadjer, Ribhu Sharma, Mark E. Law, Peter E. Raad, Pavel L. Komarov, Zahabul Islam, Aman Haque, S.J. Pearton
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2bec5ffda882f6eb94629a7b1ed7311
https://doi.org/10.1016/b978-0-12-821084-0.00001-9
https://doi.org/10.1016/b978-0-12-821084-0.00001-9
Autor:
Habib Ahmad, Ozgur Aktas, M.G. Ancona, Travis J. Anderson, Cem Basceri, Josephine Chang, Bikramjit Chatterjee, Zhe Cheng, Sukwon Choi, Volker Cimalla, W. Alan Doolittle, Tatyana I. Feygelson, Brian Foley, Daniel Francis, John T. Gaskins, Thomas Gerrer, Ashutosh Giri, Samuel Graham, Aman Haque, Eric Heller, Karl D. Hobart, Mark W. Holtz, Patrick E. Hopkins, Robert Howell, Zahabul Islam, Pavel L. Komarov, Martin Kuball, Mark E. Law, Lucas Lindsay, Elison Matioli, Callum Middleton, Codie Mishler, Alyssa L. Mock, Vladimir Odnoblyudov, David H. Olson, Bradford B. Pate, Georges Pavlidis, S.J. Pearton, Edwin L. Piner, Peter E. Raad, Fan Ren, Travis L. Sandy, Ribhu Sharma, Jingjing Shi, Daniel Shoemaker, Aditya Sood, Joseph A. Spencer, Marko J. Tadjer, John A. Tomko, Remco van Erp, Hiu-Yung Wong, Minghan Xian, Yuhao Zhang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::787bcc0ab72fa9bfb466044ab766f477
https://doi.org/10.1016/b978-0-12-821084-0.09990-x
https://doi.org/10.1016/b978-0-12-821084-0.09990-x
Autor:
Niklas Rorsman, Manfred Madel, Travis L. Sandy, Peter E. Raad, Mattias Thorsell, Ding Yuan Chen, Pavel L. Komarov, Kristoffer Andersson, Sten E. Gunnarsson, Johan Bremer, Torbjorn M.J. Nilsson, Aleksandra Malko
Publikováno v:
IEEE Transactions on Electron Devices. 67:1952-1958
This article presents an electric-based methodology for thermal characterization of semiconductor technologies. It is shown that for technologies such as gallium nitride (GaN) high electron mobility transistors, which exhibit several field induced el
Autor:
Ribhu Sharma, Jiancheng Yang, Jenshan Lin, Fan Ren, Peter E. Raad, Stephen J. Pearton, Pavel L. Komarov, Akito Kuramata, Chin Wei Chang, David J. Smith, Mark E. Law, Patrick H. Carey, Yen Ting Chen, Marko J. Tadjer, Yu-Te Liao, Chaker Fares, Minghan Man
Publikováno v:
ECS Transactions. 92:15-24
Ga2O3 is a candidate for power electronics due to its large bandgap, controllable doping and availability of large inexpensive substrates. These include power conditioning systems, pulsed power for avionics and electric ships, solid-state drivers for
Autor:
Pavel L. Komarov, Andrew D. Koehler, Peter E. Raad, Mark S. Goorsky, Karl D. Hobart, Tingyu Bai, Daniel Francis, Travis J. Anderson, James C. Gallagher, Fritz J. Kub, Mario G. Ancona, Marko J. Tadjer
Publikováno v:
IEEE Electron Device Letters. 40:881-884
Record DC power has been demonstrated in AlGaN/GaN high electron mobility transistors fabricated using a substrate replacement process in which a thick diamond substrate is grown by chemical vapor deposition following removal of the original Si subst
Autor:
Fan Ren, Jiancheng Yang, Stephen J. Pearton, Akito Kuramata, Marko J. Tadjer, Peter E. Raad, Pavel L. Komarov
Publikováno v:
ECS Transactions. 89:3-7
There is increasing adoption of SiC and GaN for various high-power applications, including in the areas of transportation, electricity production and distribution, control of industrial machinery, and military systems. These applications are expandin
Autor:
Chaker Fares, Mark E. Law, Minghan Xian, Peter E. Raad, Chin Wei Chang, Zahabul Islam, Marko J. Tadjer, Akito Kuramata, Fan Ren, Aman Haque, Yu-Te Liao, Jenshan Lin, Stephen J. Pearton, Ribhu Sharma, Patrick H. Carey, Pavel L. Komarov
Publikováno v:
Oxide-based Materials and Devices XI.
There are continuing rapid developments in vertical geometry Ga2O3 for high voltage switching applications. Ga2O3 is emerging as a viable candidate for certain classes of power electronics with capabilities beyond existing technologies due to its lar