Zobrazeno 1 - 10
of 87
pro vyhledávání: '"Pavel A. Forsh"'
Autor:
Anna N. Matsukatova, Artem Yu. Vdovichenko, Timofey D. Patsaev, Pavel A. Forsh, Pavel K. Kashkarov, Vyacheslav A. Demin, Andrey V. Emelyanov
Publikováno v:
Nano Research. 16:3207-3214
Autor:
Alexander S. Ilin, Mikhail N. Martyshov, Vadim B. Platonov, Alexander V. Pavlikov, Alexandra V. Koroleva, Ekaterina V. Kytina, Elizaveta A. Konstantinova, Pavel A. Forsh, Pavel K. Kashkarov
Publikováno v:
Crystal Growth & Design.
Autor:
E. S. Ibragimov, A. S. Vorontsov, E. A. Forsh, K. A. Savin, Pavel A. Forsh, M. N. Martyshov, I. V. Novikov
Publikováno v:
Moscow University Physics Bulletin. 76:80-83
The spectral dependence of current sensitivity and kinetics of photoconductivity and the increase and decrease of photoresistances based on a composite of poly(3-hexylthiophene) polymer and silicon nanoparticles have been investigated. It has been fo
Autor:
Denis E. Presnov, Dmitriy V. Amasev, Konstantin Savin, M. G. Tedoradze, P. Kaskarov, V. A. Kulbachinskii, Pavel A. Forsh, E. A. Forsh, A. Kazanskiy, Alexey R. Tameev
Publikováno v:
Nanotechnologies in Russia. 15:770-777
This work is devoted to the determination of the mechanisms of generation, transfer, and recombination of charge carriers in a hybrid organic–inorganic system—a polymer poly-3-hexylthiophene with silicon nanoparticles (nc-Si). It is shown that by
Autor:
V. V. Rylkov, A. A. Minnekhanov, A. N. Matsukatova, Vyacheslav A. Demin, Pavel A. Forsh, Pavel K. Kashkarov, Andrey V. Emelyanov
Publikováno v:
JETP Letters. 112:357-363
Effects of second-order resistive switching in memristors based on poly-p-xylylene have been detected for the first time. It has been shown that these memristive structures constitute a dynamic system whose behavior significantly depends on second-or
Autor:
Pavel K. Kashkarov, Pavel A. Forsh, M. N. Martyshov, A. S. Ilin, E. A. Forsh, Andrey G. Kazanskii
Publikováno v:
ChemistrySelect. 5:6705-6708
Autor:
N. I. Borgardt, Pavel A. Forsh, Elena D. Obraztsova, Sergey Gavrilov, Sofia N. Bokova‐Sirosh, R. L. Volkov, Alexander V. Pavlikov, Alexey Dronov, Pavel K. Kashkarov, I. M. Gavrilin
Publikováno v:
Journal of Raman Spectroscopy. 51:596-601
Autor:
Pavel K. Kashkarov, Andrey V. Emelyanov, Sergei N. Chvalun, D. A. Sakharutov, A.Yu. Vdovichenko, Vyacheslav A. Demin, A. N. Matsukatova, Pavel A. Forsh, V. V. Rylkov, A. A. Minnekhanov, R. A. Kamyshinskii
Publikováno v:
Technical Physics Letters. 46:73-76
The properties of memristors based on poly(p-xylylene) with embedded silver nanoparticles have been studied, including current–voltage characteristics, resistive switching phenomenon, stability with respect to multiple switching cycles, and ability
Publikováno v:
Russian Microelectronics. 48:576-581
The distribution of the potential and the parameters of the potential barrier for electrons in semiconductor crystallite is numerically calculated. The calculations are made in a spherical crystallite with uniformly distributed surface states and uni
Publikováno v:
Journal of Engineering and Applied Sciences. 14:5706-5709