Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Pavan Pujar"'
Publikováno v:
Biomimetics, Vol 9, Iss 9, p 547 (2024)
Neuromorphic devices are electronic devices that mimic the information processing methods of neurons and synapses, enabling them to perform multiple tasks simultaneously with low power consumption and exhibit learning ability. However, their large-sc
Externí odkaz:
https://doaj.org/article/b9199125d1db4332b01ff3872025d35c
Autor:
Changgyun Moon, Pavan Pujar, Srinivas Gandla, Byungjun So, Sunjong Lee, Dongmin Kim, Kon-Woo Kwon, Sunkook Kim
Publikováno v:
Communications Materials, Vol 4, Iss 1, Pp 1-9 (2023)
Abstract Recent advances in anticounterfeiting technology highlight the importance of functional materials with innovative processing methods for achieving robust anticounterfeiting tags. Here, we report a fabrication approach that enables the format
Externí odkaz:
https://doaj.org/article/b8567696deed4476b144ee7c1b885e06
Autor:
Meenakshi R Sarvi, Chinmayi R Joshi, Pavan Pujar, K Sridhar, Shailesh S Patil, Vijaykumar B Murteli, SD Jyothi
Publikováno v:
Indian Journal of Neonatal Medicine and Research, Vol 11, Iss 1, Pp PO36-PO42 (2023)
Introduction: Coronavirus Disease-2019 (COVID-19) infection in pregnant women can have important effects on the perinatal and neonatal outcomes. Multiple modes of transmission of infection from mother to the newborn have been suggested as also the in
Externí odkaz:
https://doaj.org/article/441daf79c56e4039a29031e772723eb9
Autor:
Hae Won Cho, Pavan Pujar, Minsu Choi, Seunghun Kang, Seongin Hong, Junwoo Park, Seungho Baek, Yunseok Kim, Jaichan Lee, Sunkook Kim
Publikováno v:
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-8 (2021)
Abstract Herein, the direct growth of polar orthorhombic phase in Hf0.5Zr0.5O2 (HZO) thin films is reported using Pulsed Laser Deposition (PLD). The growth of HZO onto a preheated (700 °C) silicon substrate mimics the rapid thermal annealing, which
Externí odkaz:
https://doaj.org/article/c67e4fae408a46fabc5bd9f59b7d58c4
Publikováno v:
Advanced Electronic Materials, Vol 8, Iss 4, Pp n/a-n/a (2022)
Abstract 2D transition metal dichalcogenides (TMDs) have recently received significant attention owing to their superior electrical, optical, and mechanical properties. However, most previous research on TMDs has not focused on their stability agains
Externí odkaz:
https://doaj.org/article/a13db1339b6d4e23a6de182ecfbabaa2
Autor:
Hae Won Cho, Pavan Pujar, Minsu Choi, Seunghun Kang, Seongin Hong, Junwoo Park, Seungho Baek, Yunseok Kim, Jaichan Lee, Sunkook Kim
Publikováno v:
npj 2D Materials and Applications, Vol 5, Iss 1, Pp 1-1 (2021)
Externí odkaz:
https://doaj.org/article/d5cf3313bcad4fcf9509a27e8b2909b3
Autor:
Muhammad Naqi, Nayoung Kwon, Sung Hyeon Jung, Pavan Pujar, Hae Won Cho, Yong In Cho, Hyung Koun Cho, Byungkwon Lim, Sunkook Kim
Publikováno v:
Nanomaterials, Vol 11, Iss 5, p 1101 (2021)
Non-volatile memory (NVM) devices based on three-terminal thin-film transistors (TFTs) have gained extensive interest in memory applications due to their high retained characteristics, good scalability, and high charge storage capacity. Herein, we re
Externí odkaz:
https://doaj.org/article/17df2b83ac91479682d583dd3c82beff
Publikováno v:
ACS Applied Electronic Materials. 5:2608-2623
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d0f48d504cb81fd8de2c6c8ebc75e2d
https://doi.org/10.1021/acsaelm.3c00094
https://doi.org/10.1021/acsaelm.3c00094
Publikováno v:
ACS Applied Electronic Materials. 5:11-20
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fe7d5745e06717fde89b12efc3f04b3
https://doi.org/10.1021/acsaelm.2c01513
https://doi.org/10.1021/acsaelm.2c01513
Autor:
Arindam Bala, Pavan Pujar, Debottam Daw, Yongin Cho, Muhammad Naqi, Haewon Cho, Srinivas Gandla, Sunkook Kim
Publikováno v:
ACS Applied Electronic Materials. 4:3973-3979
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::612cc040fd54624db413fe2729b2b98e
https://doi.org/10.1021/acsaelm.2c00614
https://doi.org/10.1021/acsaelm.2c00614