Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Paulo L. Franzen"'
Publikováno v:
Journal of Luminescence. 180:341-347
Pr2O3 doped 26.66B2O3–52.33PbO–16GeO2–4Bi2O3–1Pr2O3 (BPGBPr) glass was synthesized by melt quenching technique. X-ray diffraction confirmed the amorphous nature of the glass and the presence of different vibrational groups was identified by R
Publikováno v:
Materials Letters. 134:126-129
Passivation of native point defects in ZnO nanowires was successfully achieved by SiO2 deposition. The ZnO nanowires were grown on sapphire by the vapor–liquid–solid method and coated with SiO2 through reactive sputtering deposition. The samples
Publikováno v:
Journal of Luminescence. 153:144-147
In the present work, we have studied the photoluminescence (PL) and decay lifetime of Tb and Eu nanoparticles (NPs) at low temperatures. The NPs were obtained by ion implantation into a SiO2 matrix. Concerning the PL emission of Tb NPs (from 370 to 7
Autor:
Anto^nio Eudócio P. De Mattos, Guilherme Sombrio, Paulo L. Franzen, Marcelo Barbalho Pereira, Henri Ivanov Boudinov
Publikováno v:
ECS Transactions. 39:315-320
The quest to improve silicon properties for optoelectronic applications is a challenge for many researchers. The answer appears to rely on microelectronic compatible materials enhanced with embedded nanostructures. We used reactive sputtering to prod
Autor:
Paulo L. Franzen, Marcelo Barbalho Pereira, Anto^nio Eudócio P. De Mattos, Guilherme Sombrio, Henri Ivanov Boudinov
Publikováno v:
ECS Transactions. 39:103-108
In the present work, we confectioned light emitting SiOx (x
Autor:
Guilherme Sombrio, Paulo L. Franzen, Paulo A. Soave, Francio Rodrigues, Henri Ivanov Boudinov
Publikováno v:
2015 30th Symposium on Microelectronics Technology and Devices (SBMicro).
Non-stoichiometric silicon nitride layers were sandwiched between indium thin oxide (transparent contact) and n type silicon substrate. These films were deposited by reactive sputtering from silicon target. The composition and thickness were extracte
Engineering of the photoluminescence of ZnO nanowires by different growth and annealing environments
Autor:
C.I. L. Sombrio, Paulo L. Franzen, Henri Ivanov Boudinov, Daniel L. Baptista, André Luis Fernandes Cauduro
Publikováno v:
Fernandes Cauduro, A L, Sombrio, C I L, Franzen, P L, Boudinov, H & Baptista, D L 2015, Engineering of the photoluminescence of ZnO nanowires by different growth and annealing environments . in Proceedings of 30th Symposium on Microelectronics Technology and Devices . IEEE, 30th Symposium on Microelectronics Technology and Devices, Bahia, Brazil, 31/08/2015 . https://doi.org/10.1109/SBMicro.2015.7298151
Optical properties of ZnO nanowires were investigated through photoluminescence (PL) at room and low temperatures. An excitonic structure was observed in the UV band emission and we are able to distinguish between free excitons, bound excitons and do
Autor:
Paulo L. Franzen, Daniel L. Baptista, André Luis Fernandes Cauduro, Henri Ivanov Boudinov, Caroline I. Lisevski
Publikováno v:
Lisevski, C I, Fernandes Cauduro, A L, Franzen, P L, Boudinov, H & Baptista, D L 2015, Electrical and optical behavior of ZnO nanowires irradiated by ion beam . i Proceedings of the 30th Symposium on Microelectronics Technology and Devices . IEEE Press, 30th Symposium on Microelectronics Technology and Devices, Bahia, Brasilien, 31/08/2015 . https://doi.org/10.1109/SBMicro.2015.7298106
Zinc oxide nanowires have been attracting much interest due to their potential use in electronics and optoelectonics devices. In this work, we report on the photoluminescence and electrical behavior of ZnO nanowires grown by vapor-liquid-solid method
Publikováno v:
28th Symposium on Microelectronics Technology and Devices (SBMicro 2013).
Non-stoichiometric silicon oxy-nitride films were deposited by reactive sputtering. The compositions were obtained quantitatively by Rutherford Backscattering Spectroscopy. After deposition, the samples were thermally treated to activate the radiativ
Autor:
Paulo L. Franzen, Henri Ivanov Boudinov, Marcelo Barbalho Pereira, R L Maltez, L G Matos, Guilherme Sombrio
Publikováno v:
Journal of Physics D: Applied Physics. 46:235106
Non-stoichiometric silicon nitride films with photoluminescence (PL) properties were synthesized by reactive sputtering from a silicon target. The compositions were obtained quantitatively by Rutherford backscattering spectroscopy (RBS). Thermal anne