Zobrazeno 1 - 10
of 453
pro vyhledávání: '"Paulo A. Faria"'
Autor:
Deb, Swarup, Krause, Johannes, Junior, Paulo E. Faria, Kempf, Michael Andreas, Schwartz, Rico, Watanabe, Kenji, Taniguchi, Takashi, Fabian, Jaroslav, Korn, Tobias
Publikováno v:
Nature Communications 15 (2024) 7595
Interfacial ferroelectricity, prevalent in various parallel-stacked layered materials, allows switching of out-of-plane ferroelectric order by in-plane sliding of adjacent layers. Its resilience against doping potentially enables next-generation stor
Externí odkaz:
http://arxiv.org/abs/2409.07234
Autor:
Rosa, Bárbara L. T., Junior, Paulo E. Faria, Cadore, Alisson R., Yang, Yuhui, Koulas-Simos, Aris, Palekar, Chirag C., Tongay, Sefaattin, Fabian, Jaroslav, Reitzenstein, Stephan
The impressive physics and applications of intra- and interlayer excitons in a transition metal dichalcogenide twisted-bilayer make these systems compelling platforms for exploring the manipulation of their optoelectronic properties through electrica
Externí odkaz:
http://arxiv.org/abs/2407.08063
Autor:
Campos, Warlley H., Penteado, Poliana H., Zanon, Julian, Junior, Paulo E. Faria, Candido, Denis R., Egues, J. Carlos
Dual topological insulators (DTIs) are simultaneously protected by time-reversal and crystal symmetries, representing advantageous alternatives to conventional topological insulators. By combining ab initio calculations and the $\mathbf{k}\cdot\mathb
Externí odkaz:
http://arxiv.org/abs/2405.15869
Rashba spin-orbit coupling is a quintessential spin interaction appearing in virtually any electronic heterostructure. Its paradigmatic spin texture in the momentum space forms a tangential vector field. Using first-principles investigations, we demo
Externí odkaz:
http://arxiv.org/abs/2402.12353
Autor:
Palekar, Chirag C., Junior, Paulo E. Faria, Rosa, Barbara, Sousa, Frederico B., Malard, Leandro M., Fabian, Jaroslav, Reitzenstein, Stephan
Transition metal dichalcogenide (TMDC) heterostructures have unique properties that depend on the twisting angle and stacking order of two or more monolayers. However, their practical applications are limited by the low photoluminescence yield of int
Externí odkaz:
http://arxiv.org/abs/2311.02509
Autor:
Rybak, Miłosz, Junior, Paulo E. Faria, Woźniak, Tomasz, Scharoch, Paweł, Fabian, Jaroslav, Birowska, Magdalena
Here we systematically investigate the impact of the spin direction on the electronic and optical properties of transition metal phosphorus trichalcogenides (MPX$_3$, M=Mn, Ni, Fe; X=S, Se) exhibiting various antiferromagnetic arrangement within the
Externí odkaz:
http://arxiv.org/abs/2308.13109
Autor:
Graml, Maximilian, Zollner, Klaus, Hernangómez-Pérez, Daniel, Junior, Paulo E. Faria, Wilhelm, Jan
Publikováno v:
J. Chem. Theory Comput. 20, 2202 (2024)
The $GW$ method is widely used for calculating the electronic band structure of materials. The high computational cost of $GW$ algorithms prohibits their application to many systems of interest. We present a periodic, low-scaling and highly efficient
Externí odkaz:
http://arxiv.org/abs/2306.16066
Publikováno v:
SciPost Phys. Codebases 25 (2024)
The $\mathbf{k}\cdot\mathbf{p}$ method, combined with group theory, is an efficient approach to obtain the low energy effective Hamiltonians of crystalline materials. Although the Hamiltonian coefficients are written as matrix elements of the general
Externí odkaz:
http://arxiv.org/abs/2306.08554
Autor:
Meier, Sebastian, Zhumagulov, Yaroslav, Dietl, Matthias, Parzefall, Philipp, Kempf, Michael, Holler, Johannes, Nagler, Philipp, Junior, Paulo E. Faria, Fabian, Jaroslav, Korn, Tobias, Schüller, Christian
In low-temperature resonant Raman experiments on MoSe$_2$-WSe$_2$ heterobilayers, we identify a hybrid interlayer shear mode (HSM) with an energy, close to the interlayer shear mode (SM) of the heterobilayers, but with a much broader, asymmetric line
Externí odkaz:
http://arxiv.org/abs/2306.01483
Autor:
An, Zhao, Soubelet, Pedro, Zhumagulov, Yaroslav, Zopf, Michael, Delhomme, Alex, Qian, Chenjiang, Junior, Paulo E. Faria, Fabian, Jaroslav, Cao, Xin, Yang, Jingzhong, Stier, Andreas V., Ding, Fei, Finley, Jonathan J.
The electron-hole exchange interaction is a fundamental mechanism that drives valley depolarization via intervalley exciton hopping in semiconductor multi-valley systems. Here, we report polarization-resolved photoluminescence spectroscopy of neutral
Externí odkaz:
http://arxiv.org/abs/2303.15325