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Autor:
Valentina Spampinato, Yuanyuan Shi, Jill Serron, Albert Minj, Benjamin Groven, Thomas Hantschel, Paul van derHeide, Alexis Franquet
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 7, Pp n/a-n/a (2023)
Abstract Atomically thin, 2D semiconductors, such as transition metal dichalcogenides, complement silicon in ultra‐scaled nano‐electronic devices. However, the semiconductor and its interfaces become increasingly more difficult to characterize ch
Externí odkaz:
https://doaj.org/article/304cf18b40c54a04bfe6c1a03031f001
