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Autor:
Edward Beam, U. Chowdhury, Carlo Floresca, Tony Balistreri, S.Y. Park, C. Lee, Jose L. Jimenes, Moon J. Kim, Paul Sunier
Publikováno v:
2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop].
HRTEM observation was conducted to find evidence of physical degradation in AlGaN/GaN heterostructure HEMT devices after life time testing. A strong relationship between electrical degradation and defects formation near the gate edge was observed. De