Heavy-to-light electron transition enabling real-time spectra detection of charged particles by a biocompatible semiconductor

Autor: Dou Zhao, Ruiling Gao, Wei Cheng, Mengyao Wen, Xinlei Zhang, Tomoyuki Yokota, Paul Sellin, Shengyuan A. Yang, Li Shang, Chongjian Zhou, Takao Someya, Wanqi Jie, Yadong Xu

Publikováno v: Nature Communications, Vol 15, Iss 1, Pp 1-12 (2024)

Abstract The current challenge of wearable/implantable personal dosimeters for medical diagnosis and radiotherapy applications is lack of suitable detector materials possessing both excellent detection performance and biocompatibility. Here, we repor

Externí odkaz: https://doaj.org/article/290081f798324c329bb674c326efa5f7

Development and characterisation of caesium lead halide perovskite nanocomposite scintillators for X-ray detection

Autor: Joseph O’Neill, Isabel Braddock, Carol Crean, Joydip Ghosh, Mateus Masteghin, Sion Richards, Matthew Wilson, Paul Sellin

Publikováno v: Frontiers in Physics, Vol 10 (2023)

We present work on the development of mixed-halide perovskite (CsPbClxBr(1−x)) nanocrystal scintillators for X-ray detection applications. The effect of the varying the halide composition on the resulting peak emission and light yield is discussed,

Externí odkaz: https://doaj.org/article/29d9b769087c47dc9814a361006d51e3

Polycrystalline Formamidinium Lead Bromide X-ray Detectors

Autor: Suad Alghamdi, Stephanie Bennett, Carol Crean, Joydip Ghosh, Harry Gibbard, Robert Moss, Justin Reiss, Douglas Wolfe, Paul Sellin

Publikováno v: Applied Sciences, Vol 12, Iss 4, p 2013 (2022)

We have investigated the performance of formamidinium lead bromide (FAPbBr3) perovskite X-ray detectors fabricated from polycrystalline material that is pressed into a pellet at high pressures. FAPbBr3 has been shown to exhibit a remarkable combinati

Externí odkaz: https://doaj.org/article/aa3d3733ba1a4a8989adcc749ad27e7f

Self-Powered X-ray Detection and Imaging using Cs2AgBiCl6 Lead-Free Double Perovskite Single Crystal

Autor: Naveen Kumar Tailor, Joydip Ghosh, Mohammad Adil Afroz, Stephanie Bennett, Manisha Chatterjee, Paul Sellin, Soumitra Satapathi

Publikováno v: ACS Applied Electronic Materials. 4:4530-4539

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f25eb4728f0bd6f07ee82f67d2efd4bc
https://doi.org/10.1021/acsaelm.2c00752

Microscopy of Semiconducting Materials 2003

Autor: Alexey Kolmakov, Emanuele Pelucchi, Michael Fay, LUCIA NASI, Maria Varela, Rafael García Roja, Dmitry Lobanov, Helge Weman, Ferdinand Hofer, Rafal Dunin-Borkowski, Markus Weyers, Joel Eymery, Gazi Aliev, Marina Gutiérrez Peinado, Hitoshi Tampo, Eric Tournié, Douglas Paul, Slawomir Kret, Federico Corni, Graziella Malandrino, Paul Midgley, PEDRO L. GALINDO, Cécile Hébert, Alexander Vasiliev, Adalberto Balzarotti, Ana Sanchez, Grzegorz Jurczak, Ondrej Klimo, Wsevolod Lundin, Matthew Weyland, Thomas Walther, Sandra Van Aert, Dmitri Nikolichev, Lothar Houben, Sascha Sadewasser, Viacheslav Golovanov, Adam Łaszcz, Ian Watson, Srinivasan Anand, Vittorio Morandi, Alessandra Catellani, Paul Munroe, Lydia Laffont, Ursel Bangert, Nicolas Grandjean, Jennifer Gray, Annika Lohstroh, Paul Sellin, Andreu Cabot, Jie Zhang, Ernesto Placidi, Evgenii Zavarin, Jacek Ratajczak, Richard Beanland, Mohammed Benaissa, Dmitri GOLBERG, Michael Stöger-Pollach, Paul Harrison, Monica Bollani, Alexey Novikov, Gilles Patriarche, Vadim Sirotkin, Meilin Liu, Miriam Herrera Collado, Sergey Rubanov, Adam Wojcik, ANNA SGARLATA, Arnold Den Dekker, Thomas Dekorsy, André Vantomme, George Cirlin, Jerzy KĄTCKI, Daniel Hill, Masanori Mitome, Xavier Aymerich, Sergio I. Molina, Paweł Dłużewski, Roberta grazia Toro, Souren Grigorian, Klaus Leifer, Mark Aindow, Jean-Michel Chauveau, Giuseppe Nicotra, Martin Albrecht, Corrado Bongiorno, Jiří Limpouch, Hele Savin

Publikováno v: A. G. Cullis, P. A. Midgley. CRC Press, 4 p., 2018, 9781351074636. ⟨10.1201/9781351074636⟩

International audience; In Accumulated Low Schottky Barrier metal oxide semiconductor field effect transistors (MOSFET) on SOl structures, very thin silicide layers are used for ohmic contacts. Silicide contacts form due to metallurgical reaction of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::301d0be2daf17c1032417a5026374bfe
https://hal.science/hal-03555261