Zobrazeno 1 - 10
of 196
pro vyhledávání: '"Paul Saunier"'
Publikováno v:
Proceedings of the American Philosophical Society, 1958 Aug . 102(4), 351-370.
Externí odkaz:
https://www.jstor.org/stable/985220
Autor:
Aaron R. Arehart, Ronald D. Schrimpf, Steven A. Ringel, Daniel M. Fleetwood, Erin C. H. Kyle, Paul Saunier, Yevgeniy Puzyrev, Stephen W. Kaun, Sokrates T. Pantelides, Jin Chen, En Xia Zhang, James S. Speck, C. Lee
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 16:282-289
A small degradation of threshold voltage and a significant reduction in dc and RF transconductance are observed for AlGaN/GaN high-electron-mobility transistors fabricated via three different process techniques and subjected to high voltage stress in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdde4d57449ff3b02092f5571217a831
https://doi.org/10.1109/tdmr.2016.2581178
https://doi.org/10.1109/tdmr.2016.2581178
Autor:
Paul Saunier, Daniel M. Fleetwood, Yevgeniy Puzyrev, Sokrates T. Pantelides, Steven A. Ringel, Rong Jiang, Michael W. McCurdy, En Xia Zhang, Aaron R. Arehart, Jin Chen, Ronald D. Schrimpf, C. Lee
Publikováno v:
IEEE Transactions on Nuclear Science. 62:2423-2430
The sensitivity of GaN/AlGaN HEMTs to 1.8 MeV proton irradiation is greatly enhanced by biasing the devices during irradiation and/or applying high field stress before irradiation. The resulting defect energy distributions are evaluated after irradia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22530083f976e2182561d106a563b12c
https://doi.org/10.1109/tns.2015.2488650
https://doi.org/10.1109/tns.2015.2488650
Autor:
Paul Saunier
Publikováno v:
International Conference on Millimeter and Submillimeter Waves and Applications 1994.
A 100-200-400A‚µm pHEMT amplifier has been developed for Ka-Band operation. This amplifier has achieved the state-of-the-art efficiency of 40% with 235 mW output power and 20.7 dB gain at 31 GHz. Production of variations of this amplifier in qua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82a6759706a8e8b5fca2eb924d9f74d0
https://doi.org/10.1117/12.2303325
https://doi.org/10.1117/12.2303325
Autor:
Debdeep Jena, Ronghua Wang, Patrick Fay, Jia Guo, Bo Song, Edward Beam, Berardi Sensale-Rodriguez, Zongyang Hu, Yuanzheng Yue, Shiping Guo, Faiza Afroz Faria, Andrew Ketterson, Paul Saunier, Xiang Gao, Huili Grace Xing, Michael L. Schuette
Publikováno v:
IEEE Transactions on Electron Devices. 61:747-754
The effects of fringing capacitances on the high-frequency performance of T-gate GaN high-electron mobility transistors (HEMTs) are investigated. Delay time components have been analyzed for gate-recessed InAlN/GaN HEMTs with a total gate length of 4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::881793e3950ca2184c1d76d8249ba6cf
https://doi.org/10.1109/ted.2014.2299810
https://doi.org/10.1109/ted.2014.2299810
Autor:
Shiping Guo, Tian Fang, Michael L. Schuette, Patrick Fay, Jia Guo, Berardi Sensale-Rodriguez, Edward Beam, Guowang Li, Huili Grace Xing, Debdeep Jena, Gregory L. Snider, Ronghua Wang, Jai Verma, Andrew Ketterson, Paul Saunier, Xiang Gao
Publikováno v:
Solid-State Electronics. 80:67-71
Delay analysis providing an alternative physical explanation on carrier transport, which may be more applicable to high electron mobility transistor (HEMT) channels with moderate carrier mobilities, has been applied to enhancement-mode (E-mode) and d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a748ce4aa1a5b2fea2f14217658534ce
https://doi.org/10.1016/j.sse.2012.10.004
https://doi.org/10.1016/j.sse.2012.10.004
Autor:
Edward Beam, Paul Saunier, David Kopp, Patrick Fay, Wayne Johnson, Oleg Laboutin, Tomas Palacios, Yu Cao, Michael L. Schuette, Andrew Ketterson, Dong Seup Lee
Publikováno v:
physica status solidi c. 10:827-830
This paper reports depletion-mode In0.13Al0.83Ga0.04N/GaN high electron mobility transistors (HEMTs) on a SiC substrate with a record current gain cutoff frequency (fT) of 317 GHz. Thanks to the combination of high electron mobility, regrown n+ InGaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f35b1cfb7fc78feb691197ec2bc874ce
https://doi.org/10.1002/pssc.201200541
https://doi.org/10.1002/pssc.201200541
Publikováno v:
2016 IEEE International Reliability Physics Symposium (IRPS).
GaN-based high electron mobility transistors (HEMTs) were subjected to DC-based accelerated life testing to determine which defect levels form or are activated, and how they impact the static and dynamic HEMT performance. The primary static changes w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4d620cc2bdc5ce2c7e0025ec450789e
https://doi.org/10.1109/irps.2016.7574587
https://doi.org/10.1109/irps.2016.7574587
Autor:
Lin Zhou, Paul Saunier, Shiping Guo, Xiang Gao, Daniel Gorka, David J. Smith, Andrew Ketterson
Publikováno v:
physica status solidi c. 8:2081-2085
High performance AlInN/AlN HEMTs with Ga free barrier and sharp interface have been demonstrated with excellent control of sheet resistance and uniformity. As the total barrier thickness reduce to below 4 nm, the depletion of 2DEG channel start to ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de67f9245c4b502fddd7de67d844a24d
https://doi.org/10.1002/pssc.201001069
https://doi.org/10.1002/pssc.201001069
Autor:
Daniel Gorka, Paul Saunier, Ming Pan, Mark Oliver, Andrew Ketterson, Michael L. Schuette, Xiang Gao
Publikováno v:
physica status solidi c. 11:495-497
We report transport properties measured from quaternary barrier InAlGaN high electron mobility transistor wafers on SiC substrates. With similar barrier thicknesses, higher mobility and sheet charge density were both demonstrated by a strained barrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b282f3a2e4e6c91eaf7132dda8d4b2f9
https://doi.org/10.1002/pssc.201300669
https://doi.org/10.1002/pssc.201300669