Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Paul Salet"'
Autor:
N. Bouche, J. Pasquier, Francois Boubal, F. Gerard, Jean-Pierre Chardon, T. Fillion, D. Locatelli, Paul Salet, H. Bissessur, S. Delepine, A. Pinquier
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 7:111-123
The operation of 1.48-/spl mu/m flared resonators is thoroughly studied, both experimentally and theoretically: the accurate determination of threshold condition as a function of geometrical and material parameters, the study of emission spectra and
Autor:
C. Fortin, Antonina Plais, E. Derouin, Christophe Starck, J. Bonnet-Gamard, D. Carpentier, Joel Jacquet, N. Bouche, Leon Goldstein, Fabienne Gaborit, J.C. Remy, Francois Brillouet, Paul Salet, J. Boucart
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 5:520-529
We present and give details about the conception and realization of the first monolithic long wavelength vertical-cavity surface-emitting laser (VCSEL) operating continuous wave at room temperature. This approach relies on two originalities: a metamo
Numerical modeling of undercut ridge VCSELs designed for CW operation at 1.3 μm: design optimization
Publikováno v:
IEEE Journal of Quantum Electronics. 33:2221-2230
Optimized undercut ridge long-wavelength vertical-cavity surface-emitting semiconductor lasers (LW-VCSEL's) are investigated and the influence of thermal effects on the light versus current characteristics is analyzed by thermal-electric, optical, an
Publikováno v:
IEEE Photonics Technology Letters. 12:1447-1449
We demonstrate the relevance of ion implantation of the multiple quantum-well active layer in unstable-cavity lasers as a means of efficiently filtering the parasitic higher order waves by introducing additional propagation loss within the cavity. Se
Publikováno v:
IEEE Photonics Technology Letters. 12:254-256
A 1.48-/spl mu/m unstable-cavity laser is coupled into single-mode fiber using three microlenses. Reproducible coupling of very high power is demonstrated with different types of lenses (plano-convex or biconvex, with different apertures). Over 550 m
Autor:
Christophe Starck, J. Boucart, Fabienne Gaborit, C. Fortin, Francois Brillouet, Antonina Plais, Leon Goldstein, N. Bouche, Estelle Derouin, D. Carpentier, Joel Jacquet, Paul Salet
Publikováno v:
IEEE Photonics Technology Letters. 11:629-631
In this letter, we demonstrate the first result of a high-power (1 mW) continuous-wave room-temperature vertical-cavity surface-emitting laser emitting at 1.55 /spl mu/m using a single InP substrate. The whole structure was grown monolithically using
Publikováno v:
IEEE Photonics Technology Letters. 10:1706-1708
Diffraction-limited high-power devices may suffer from self-focusing effects due to nonuniform gain saturation. In this letter, we propose the concept of the distributed electrode, which allows one to improve the modal behavior of these lasers and to
Autor:
J.-L. Lafragette, F. Gerard, T. Fillion, Christophe Starck, Antonina Plais, Joel Jacquet, Paul Salet
Publikováno v:
Conference Digest. 15th IEEE International Semiconductor Laser Conference.
Summary form only given. The experimental parameters for the soldering of an InP wafer onto a Si substrate have been optimised and used for the fabrication of matrices of 1.3-/spl mu/m VCSELs. The lasers operate at room temperature under pulsed injec
Autor:
T. Fillion, Estelle Derouin, C. Fortin, Joel Jacquet, Francois Brillouet, A. Pinquier, Paul Salet, Antonina Plais, Christophe Starck
Publikováno v:
Scopus-Elsevier
Room temperature, pulsed operation of 1.3 /spl mu/m InGaAsP/InP vertical cavity surface emitting lasers (VCSELs) has been demonstrated. Low threshold currents have been obtained with a non buried structure having dielectric mirrors on both the p and
Publikováno v:
Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference (Cat. No. 98CH361130).
The distributed electrode enables to reduce spatial hole-burning effects, therefore improving the modal behavior of diffraction-limited MQW lasers. We report the first realization of such devices emitting 1.1 W nearly single mode at 1480 nm.