Zobrazeno 1 - 10
of 173
pro vyhledávání: '"Paul S. Peercy"'
Autor:
Paul S. Peercy, Steven M. Cramer
Publikováno v:
Journal of Engineering Education. 100:625-629
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e26576212ea6c4485255c83dae5c94f6
https://doi.org/10.1002/j.2168-9830.2011.tb00029.x
https://doi.org/10.1002/j.2168-9830.2011.tb00029.x
Autor:
Paul S. Peercy
Publikováno v:
Nature. 416:799-801
As electronic devices become smaller, so the challenge of maintaining their electrical properties grows. Identifying the positions of introduced impurities in a semiconductor crystal is a major first step.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cd15fa7ee29f04c2070a1670c513f0f
https://doi.org/10.1038/416799a
https://doi.org/10.1038/416799a
Autor:
Paul S. Peercy
Publikováno v:
AT&T Technical Journal. 70:49-58
Sandia National Laboratories pioneered work in strained-layer superlattice systems for electronics and optoelectronics. Based on that work, it now conducts research and development in compound semiconductor and optoelectronics physics, materials scie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05d7defb929b39f3f3d61e9dc8897a73
https://doi.org/10.1002/j.1538-7305.1991.tb00137.x
https://doi.org/10.1002/j.1538-7305.1991.tb00137.x
Autor:
Michael Thompson, Paul S. Peercy, S. R. Stiffler, Jeffrey Y. Tsao, David E. Hoglund, Michael J. Aziz
Publikováno v:
Journal of Crystal Growth. 109:107-112
During rapid solidification, nonequilibrium interface kinetics alter the predictions of the Mullins-Sekerka theory for the stability of a planar interface against cellular breakdown. The velocity-dependence of the partition coefficient and of the Sn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea90183eff79159011bd75ca9f2bacf9
https://doi.org/10.1016/0022-0248(91)90164-z
https://doi.org/10.1016/0022-0248(91)90164-z
Publikováno v:
Journal of Materials Research. 5:1463-1467
Time-dependent measurements of the melt and solidification behavior of amorphous Si, formed by ion implantation of In, have been obtained following irradiation with ∼3 ns ruby laser pulses. The recently observed buried In sheets formed under such c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df422a48b7bc1ca1c085c2ba2de8d514
https://doi.org/10.1557/jmr.1990.1463
https://doi.org/10.1557/jmr.1990.1463
Autor:
Julia M. Phillips, Paul S. Peercy, Andrew Zangwill, Michael W. Geis, Ernst G. Bauer, J. P. Harbison, Leonard C. Feldman, C. Peter Flynn, Brian W. Dodson, Pierre Petroff, Daniel J. Ehrlich, Richard J. Matyi, Gerald B. Stringfellow
Publikováno v:
Journal of Materials Research. 5:852-894
During the past decade, nonequilibrium techniques have been developed for the growth of epitaxial semiconductors, insulators, and metals which have led to new classes of artificially structured materials. Structures can now be grown which present the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21ce660e0186dd6ba51902ddf125ace5
https://doi.org/10.1557/jmr.1990.0852
https://doi.org/10.1557/jmr.1990.0852
Autor:
Paul S. Peercy, David R. Myers
The US Department of Energy requires a periodic assessment of the Microsystems Program at Sandia National Laboratories. An external review of this program is held approximately every 18 months to 24 months. The report from the External Review Panel s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94adda9cb60c180e56fe806226c8fceb
https://doi.org/10.2172/876290
https://doi.org/10.2172/876290
Autor:
David R. Myers, Paul S. Peercy
The US Department of Energy requires a periodic 'self assessment' of Sandia's Microsystems Program. An external panel review of this program is held approximately every 18 months, and the report from the external review panel serves as the basis for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81863f034ff312c5b25a03549f32939a
https://doi.org/10.2172/918307
https://doi.org/10.2172/918307
Autor:
Paul S. Peercy
Publikováno v:
Nature. 406(6799)
Following the introduction of silicon-based integrated circuitry over three decades ago, the integration density of such circuits has doubled every 12 to 18 months: this observation is known as Moore's law. For this historical trend to continue, sign
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2fa101cab736ca02d62ae6955e62fab7
https://pubmed.ncbi.nlm.nih.gov/10984060
https://pubmed.ncbi.nlm.nih.gov/10984060
Publikováno v:
Applied Physics Letters. 56:1025-1027
Thin germanium films on SiO2 completely melted by pulsed laser irradiation cool rapidly by thermal conduction to the substrate until they solidify. In situ measurements indicate that the liquid is supercooled by 420–530 K with respect to the crysta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29c4cea5121685fa494740f47fe46cdf
https://doi.org/10.1063/1.103326
https://doi.org/10.1063/1.103326