Zobrazeno 1 - 10
of 62
pro vyhledávání: '"Paul Ronsheim"'
Autor:
Paul M. Solomon, R. B. Laibowitz, Zhen Zhang, E. Liniger, Joanna M. Atkin, Paul Ronsheim, M. Hatzistergos, Marinus Hopstaken
Publikováno v:
IEEE Transactions on Electron Devices. 59:2027-2032
An experimental study is presented to probe the interface barriers of dopant-segregated silicide-Si diodes with internal photoemission. The spatial information of the interface dipoles, which is believed to be the cause of the effective Schottky barr
Autor:
Zhengmao Zhu, Teresa L. Pinto, Anita Madan, Paul Ronsheim, Judson R. Holt, Alexander Reznicek, Andrew Turansky, Michael Hatzistergos
Publikováno v:
Surface and Interface Analysis. 43:657-660
Systematic SIMS analyses with low-energy (250 eV ~1 keV) oxygen, cesium and krypton primary beams have been carried out on a set of fully strained uniform epitaxial Si 1-x Ge x films (x = 5 ~ 60%), as well as a germanium ion-implanted silicon standar
Autor:
Marilyne Sousa, Christian Gerl, Edward W. Kiewra, Teya Topuria, Chiara Marchiori, M. Richter, Jean Fompeyrine, Michael S. Gordon, Devendra K. Sadana, Philip M. Rice, Paul Ronsheim, Yanning Sun, Dirk Pfeiffer, Marinus Hopstaken
Publikováno v:
ECS Transactions. 28:207-215
We investigate the sputtering behavior and depth resolution upon low energy ion irradiation during Secondary Ion Mass Spectrometry (SIMS) depth profiling of GaAs. We present a systematic and quantitative study of the impact of ion species, primary io
Publikováno v:
ResearcherID
The development of laser-assisted atom-probe tomography (APT) analysis and new sample preparation approaches have led to significant advances in the characterization of semiconductor materials and device structures by APT. The high chemical sensitivi
Autor:
Philip L. Flaitz, Christopher M. Molella, Michael Hatzistergos, R. Alvis, Keith Thompson, Paul Ronsheim
Publikováno v:
Applied Surface Science. 255:1547-1550
Dynamic SIMS profiling of impurities has demonstrated capabilities for measuring shallow distributions with good accuracy and has become a correlating measurement for other methods of dopant profiling such as SSRM or electron holography. Atom probe t
Autor:
Paul Ronsheim, Michael P. Belyansky, Anita Madan, M. Chace, J. Kempisty, Y. Li, Yun-Yu Wang, S. Molis, D. Yang, N. Klymko, Oleg Gluschenkov, Anupama Mallikarjunan
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 26:517-521
Various methods of generating high stress in thin plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) films are reported. Besides the mainstream variation of plasma power and other process parameters, novel techniques such as crea
Autor:
Michael A. Gribelyuk, J. S. McMurray, Oleg Gluschenkov, Anthony G. Domenicucci, Paul Ronsheim
Publikováno v:
ECS Transactions. 11:233-242
We review formation of an electron hologram in TEM for analysis of p-n junctions in semiconductor devices. It is shown on the basis of comparison of results of electron holography and SIMS that the method can provide quantitative information directly
Autor:
John A. Ott, J. Kedzierski, Sufi Zafar, P. Kozlowski, Meikei Ieong, Cyril Cabral, Paul Ronsheim, Diane C. Boyd
Publikováno v:
IEEE Transactions on Electron Devices. 52:39-46
Complete gate silicidation has recently been demonstrated as an excellent technique for the integration of metal gates into MOSFETs. From the various silicide gate materials NiSi has been shown to be the most scalable. In this paper, a versatile meth
Autor:
Paul M. Solomon, Paul Ronsheim, W. Haensch, David J. Frank, Jason Jopling, Chris D’Emic, Omer H. Dokumaci
Publikováno v:
Journal of Applied Physics. 95:5800-5812
Band-to-band tunneling was studied in ion-implanted P/N junction diodes with profiles representative of present and future silicon complementary metal–oxide–silicon (CMOS) field effect transistors. Measurements were done over a wide range of temp
Autor:
Anda Mocuta, Min Yang, Keith A. Jenkins, Raquel T. Anderson, Paul Ronsheim, An L. Steegen, Jack O. Chu, Meikei Ieong, Byoung Hun Lee, V. Mazzeo, S. Christansen, K.K. Chan, H. Chen, P. Oldiges, T. Kanarsky, Kam-Leung Lee, S.J. Koester, Kern Rim, John A. Ott, Hon-Sum Philip Wong, Patricia M. Mooney, F. Cardone, Huilong Zhu, Ronnen Andrew Roy, Diane C. Boyd, Dan Mocuta
Publikováno v:
Solid-State Electronics. 47:1133-1139
Strain-induced enhancement of current drive is a promising way to extend the advancement of CMOS performance. Fabrication of strained Si MOSFET has been demonstrated with key elements of modern day’s CMOS technology. Significant mobility and curren