Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Paul Rissman"'
Publikováno v:
SPIE Proceedings.
In order to achieve an economical design-to-mask (DTM) development cycle in the low k1 domain, designers, lithographers, and mask makers needed to move away from many sequentially isolated developmental activities onto one collaborative environment m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d15d6c9f7313a3beb1ee8d36b25fe4e0
https://doi.org/10.1117/12.896963
https://doi.org/10.1117/12.896963
Publikováno v:
SPIE Proceedings.
The ITRS roadmap1 lists double patterning 193 nm immersion exposure with inverse lithography as the likely solution through the 22 nm half pitch generation. Three different patterns, scaled to 56 nm pitch, were explored using inverse lithography.2,3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbebf6b7b90a417f831bde017350c530
https://doi.org/10.1117/12.900852
https://doi.org/10.1117/12.900852
Publikováno v:
SPIE Proceedings.
This paper presents ILT masks written by a DUV laser writer and a VSB e-beam writer, and their corresponding wafer print results. ILT mathematically determine the mask features that produce the desired on-wafer results. ILT-generated masks sometimes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f3150b6dcd54deedd503c201fa49af3
https://doi.org/10.1117/12.632738
https://doi.org/10.1117/12.632738
Autor:
J. E. Turner, Krishna Shenai, Shuit-Tong Lee, E.A. Perez-Albuerne, R. R. Speth, N. Meyyappan, D. Dallmann, John H. Booske, J. B. Kruger, Ling Zhang, Matthew Goeckner, Paul Rissman, J. L. Shohet
Publikováno v:
Applied Physics Letters. 65:962-964
The initial results from an investigation into the feasibility of using plasma source ion implantation (PSII) to produce separation by implantation of oxygen structures in silicon are reported. Oxygen ions are implanted into p‐type (111) oriented s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b76a54043560f5b43df42740bbc8592d
https://doi.org/10.1063/1.112162
https://doi.org/10.1063/1.112162
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29:06FC17
The EVG 620 nanoimprint system is a 4 in. full wafer system suitable for university and research environments (EV Group, A-4782 Sankt Florian am Inn, Austria). By limiting the area printed and by the use of hard masks, nanoimprint lithography resolut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0df3e088562f21c81aaf19703093591d
https://doi.org/10.1116/1.3662085
https://doi.org/10.1116/1.3662085
Publikováno v:
IEEE Transactions on Plasma Science. 24:75-76
In plasma processing, especially during the etching process in microelectronics, and as the feature size decreases, charging damage to thin gate oxides can be produced which does not occur when wet chemical processes are used. It is currently believe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::304245720663dbaaedc511e4c5471f57
https://doi.org/10.1109/27.491698
https://doi.org/10.1109/27.491698
Autor:
Geraint Owen, Paul Rissman
Publikováno v:
Journal of Applied Physics. 54:3573-3581
Compensation for the proximity effect in electron lithography can be achieved by equalization of the backscattered dose received by all pattern points. This is accomplished by exposing the reverse tone of the required pattern with a beam diameter dc=
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de9c1c1f0bd30a2b456a416891b9483f
https://doi.org/10.1063/1.332426
https://doi.org/10.1063/1.332426
Autor:
Paul Rissman, Thomas Palholmen
Publikováno v:
Solid-State Electronics. 17:611-615
Photoresist technology can be used to prepare superconductive tunnel junctions and arrays. Niobium thin films, which produce durable junctions, are chemically etched to form the base superconductor. NbNbOxPb junctions continue to function after
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eda9ffe83ea82e015442441ed73e14a4
https://doi.org/10.1016/0038-1101(74)90181-6
https://doi.org/10.1016/0038-1101(74)90181-6
Autor:
Paul Rissman
Publikováno v:
World Archaeology. 20:209-228
The distribution of material goods in hoards and in funeral offerings is tabulated and summarized for the Harappan Civilization of Bronze Age South Asia. It is argued that hoards are private, secular deposits, while grave goods are public, ritualized
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d200e693a502096a70fc776092fc6ee1
https://doi.org/10.1080/00438243.1988.9980068
https://doi.org/10.1080/00438243.1988.9980068
Publikováno v:
Environment: Science and Policy for Sustainable Development. 13:15-45
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a0cac27bab77c0ffb6f3f5bdda3ccf3
https://doi.org/10.1080/00139157.1971.9930617
https://doi.org/10.1080/00139157.1971.9930617