Zobrazeno 1 - 10
of 525
pro vyhledávání: '"Paul Rainey"'
Autor:
Paul Rainey, Frederic Bertels
Publikováno v:
Bioessays
Integrative mobile genetic elements (MGEs), such as transposons and insertion sequences, propagate within bacterial genomes, but persistence times in individual lineages are short. For long-term survival, MGEs must continuously invade new hosts by ho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e0f5550340498b52ddb01224d85a0af4
https://hdl.handle.net/21.11116/0000-000C-21A0-921.11116/0000-000C-21A2-7
https://hdl.handle.net/21.11116/0000-000C-21A0-921.11116/0000-000C-21A2-7
Autor:
Paul Rainey
Publikováno v:
Philosophical Transactions of the Royal Society of London, Series B: Biological Sciences
That humans might undergo future evolutionary transitions in individuality (ETIs) seems fanciful. However, drawing upon recent thinking concerning the origins of properties that underpin ETIs, I argue that certain ETIs are imminently realizable. Cent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::01c36bc6cf2c91ee4c832ce7248b28c1
https://doi.org/10.1098/rstb.2021.0408
https://doi.org/10.1098/rstb.2021.0408
Autor:
Kena Burke, Paul Rainey
Publikováno v:
2003 Annual Conference Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4998e3576d4270838948a9765e285399
https://doi.org/10.18260/1-2--11490
https://doi.org/10.18260/1-2--11490
Autor:
Rod Hoadley, Paul Rainey
Publikováno v:
2007 Annual Conference & Exposition Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c000c597fc33eedb5693a392a80661b
https://doi.org/10.18260/1-2--1598
https://doi.org/10.18260/1-2--1598
Autor:
B.M. Armstrong, Tatiana S. Perova, Richard Hurley, Harold Gamble, David McNeill, Paul Rainey, S.J.N. Mitchell, J. Wasyluk
Publikováno v:
Journal of Raman Spectroscopy. 43:448-454
The results on structural damage in germanium wafers caused by hydrogen and helium implants of typical doses used in Smart Cut™ Technology (1–6 × 1016 atoms/cm2) are investigated using Raman mapping and spreading resistance profiling techniques.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2534b9011f927ed1d3738be70ec1cf7f
https://doi.org/10.1002/jrs.3052
https://doi.org/10.1002/jrs.3052
Autor:
J. Wasyluk, B.M. Armstrong, Harold Gamble, Paul Rainey, Paul Baine, Richard Hurley, David McNeill, Tatiana S. Perova, S.J.N. Mitchell
Publikováno v:
Solid State Phenomena. :295-300
The technology for thin Ge layer transfer by hydrogen ion-cut process is characterised in this work. Experiments were carried out to determine suitable hydrogen ion implantation doses in germanium for the low temperature ion cut process by examining
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02b5fe68b7bff9670ead345b632599bc
https://doi.org/10.4028/www.scientific.net/ssp.178-179.295
https://doi.org/10.4028/www.scientific.net/ssp.178-179.295
Autor:
David McNeill, Neil Mitchell, Yee H. Low, M. Bain, Harold Gamble, P. Baine, Paul Rainey, J.H. Montgomery, B. Mervyn Armstrong
Publikováno v:
ECS Transactions. 33:37-50
Silicon-on-sapphire (SOS) substrates have been proven to offer significant advantages in the integration of passive and active devices in RF circuits. Germanium on insulator technology is a candidate for future higher performance circuits. Thus the a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f757a4a5a31eba20935713e2dc5f2b1b
https://doi.org/10.1149/1.3485681
https://doi.org/10.1149/1.3485681
Autor:
Mervyn Armstrong, Paul Rainey, P. Baine, Harold Gamble, Neil Mitchell, Yee H. Low, David McNeill
Publikováno v:
ECS Transactions. 33:153-160
Germanium(Ge) has attractive properties such as high carrier mobility, compatibility with high-K dielectrics, and lattice matched for GaAs growth. Germanium on insulator (GOI) (1) offers the advantages of germanium and combines them with those of sil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ae0d9aba890a7c8a603cb4794552af6
https://doi.org/10.1149/1.3483503
https://doi.org/10.1149/1.3483503
Autor:
Mervyn Armstrong, J.H. Montgomery, Y.W. Low, Paul Rainey, Neil Mitchell, P. Baine, Harold Gamble, David McNeill
Publikováno v:
ECS Transactions. 33:319-327
An atmospheric plasma activation system has been employed to study its application on low temperature wafer bonding. Oxygen activation on PECVD oxide for bonding of temperature sensitive materials shows no pin hole when activating oxide with thicknes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1889446971059cf296e6ffe01f7f1ffb
https://doi.org/10.1149/1.3483521
https://doi.org/10.1149/1.3483521
Autor:
B.M. Armstrong, Harold Gamble, J.H. Montgomery, Paul Baine, Neil Mitchell, Y.W. Low, Paul Rainey, David McNeill
Publikováno v:
ECS Transactions. 28:385-393
An atmospheric plasma activation system has been employed to study its application on low temperature wafer bonding. High bond strength (> 2000 mJ/m2) is achieved by oxygen plasma activation on hydrophilic Si-Si and Si-SiO2 bonding at low temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::694af6ccb6326f8096436d767e90c126
https://doi.org/10.1149/1.3375625
https://doi.org/10.1149/1.3375625