Zobrazeno 1 - 10
of 311
pro vyhledávání: '"Paul R. Chalker"'
Autor:
Ivona Z. Mitrovic, Saeed Almalki, Serdar B. Tekin, Naser Sedghi, Paul R. Chalker, Stephen Hall
Publikováno v:
Materials, Vol 14, Iss 18, p 5218 (2021)
The quest to harvest untapped renewable infrared energy sources has led to significant research effort in design, fabrication and optimization of a self-biased rectenna that can operate without external bias voltage. At the heart of its design is the
Externí odkaz:
https://doaj.org/article/35380ec33f424334ac7dafbb374a625d
Autor:
Qifeng Lu, Yifei Mu, Joseph W. Roberts, Mohammed Althobaiti, Vinod R. Dhanak, Jingjin Wu, Chun Zhao, Ce Zhou Zhao, Qian Zhang, Li Yang, Ivona Z. Mitrovic, Stephen Taylor, Paul R. Chalker
Publikováno v:
Materials, Vol 8, Iss 12, Pp 8169-8182 (2015)
In this research, the hafnium titanate oxide thin films, TixHf1–xO2, with titanium contents of x = 0, 0.25, 0.9, and 1 were deposited on germanium substrates by atomic layer deposition (ALD) at 300 °C. The approximate deposition rates of 0.2 Å an
Externí odkaz:
https://doaj.org/article/997e101d752c432089407a328857f427
Publikováno v:
Materials, Vol 8, Iss 8, Pp 4829-4842 (2015)
A powerful characterization technique, pulse capacitance-voltage (CV) technique, was used to investigate oxide traps before and after annealing for lanthanide zirconium oxide thin films deposited on n-type Si (111) substrates at 300 °C by liquid inj
Externí odkaz:
https://doaj.org/article/31208c678f7a4acbba92cc7292fa2749
Publikováno v:
Materials, Vol 7, Iss 10, Pp 6965-6981 (2014)
Oxide materials with large dielectric constants (so-called high-k dielectrics) have attracted much attention due to their potential use as gate dielectrics in Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). A novel characterization (pul
Externí odkaz:
https://doaj.org/article/757294ebc5464980b312a22f94fc113b
Publikováno v:
Materials, Vol 7, Iss 7, Pp 5117-5145 (2014)
Flash memory is the most widely used non-volatile memory device nowadays. In order to keep up with the demand for increased memory capacities, flash memory has been continuously scaled to smaller and smaller dimensions. The main benefits of down-scal
Externí odkaz:
https://doaj.org/article/b8bd073a012c419ca513a9c807e7e60c
Autor:
Serdar B. Tekin, Saeed Almalki, Andrea Vezzoli, Liam O’Brien, Steve Hall, Paul R. Chalker, Ivona Z. Mitrovic
Publikováno v:
ECS Transactions. 108:69-79
There is a significant demand for harvesting renewable infrared (IR) energy from unused heat sources. The rectifying antenna (rectenna) device has the ability to capture alternating current (AC) IR radiation and rectify it into usable direct current
Autor:
Fabien C.-P. Massabuau, Francesca Adams, David Nicol, John C. Jarman, Martin Frentrup, Joseph W. Roberts, Thomas J. O’Hanlon, Andras Kovács, Paul R. Chalker, R. A. Oliver
The structural, chemical and electrical properties of Ni/Au contacts to the atomic layer deposited α-Ga2O3 were investigated. Ni forms a Schottky contact with α-Ga2O3, irrespectively of the post-annealing temperature. No sign of metal oxidation was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90a856508c2358c30ae556580d49c380
https://www.repository.cam.ac.uk/handle/1810/347363
https://www.repository.cam.ac.uk/handle/1810/347363
Autor:
Partha Pratim Das, Paul R. Chalker, Vinod R. Dhanak, Richard J. Potter, Teresa Partida Manzanera, Sung-Jin Cho, Rajat Mahapatra, Iain G. Thayne, James T. Gibbon, Leanne A. H. Jones, Ivona Z. Mitrovic, J.W. Roberts
Publikováno v:
ECS Transactions
GaN high electron mobility transistors (HEMTs) have been commercially available for over 10 years, however gate leakage limits their performance. The HEMT has the advantages of offering simple associated circuit design and fail-safe operation. Curren
Autor:
Geoff Dearden, Paul R. Chalker, Yue Tang, Walter Perrie, Olivier Allegre, Qianliang Li, Zhaoqing Li, Stuart Edwardson, Janet Ho
Publikováno v:
Li, Q, Perrie, W, Tang, Y, Allegre, O, Ho, J, Chalker, P R, Li, Z, Edwardson, S P & Dearden, G 2020, ' A study on ultrafast laser micromachining and optical properties of amorphous polyether(ether)ketone (PEEK) films ', Procedia CIRP . https://doi.org/10.1016/j.procir.2020.09.113
Polyether(ether)ketone (PEEK) has been widely used in the electronics and biomedical industries due to excellent electrical, chemical and thermal stability. The ablation and optical properties of amorphous PEEK have been investigated using ultrahigh
Publikováno v:
Materials
Materials, Vol 14, Iss 5218, p 5218 (2021)
Materials, Vol 14, Iss 5218, p 5218 (2021)
The quest to harvest untapped renewable infrared energy sources has led to significant research effort in design, fabrication and optimization of a self-biased rectenna that can operate without external bias voltage. At the heart of its design is the