Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Paul Pahner"'
Autor:
Max L. Tietze, Johannes Benduhn, Paul Pahner, Bernhard Nell, Martin Schwarze, Hans Kleemann, Markus Krammer, Karin Zojer, Koen Vandewal, Karl Leo
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-9 (2018)
Molecular doping is routinely used in organic semiconductor devices nowadays, but the physics at play remains unclarified. Tietze et al. describe it as a two-step process and show it costs little, energetically, to dissociate charge transfer complexe
Externí odkaz:
https://doaj.org/article/b219346aff094113a5cdf80a85b523c1
Autor:
Max L. Tietze, Johannes Benduhn, Paul Pahner, Bernhard Nell, Martin Schwarze, Hans Kleemann, Markus Krammer, Karin Zojer, Koen Vandewal, Karl Leo
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-1 (2018)
The original version of this Article contained an error in Equation 1. A factor of ‘c’ was included in the right-hand term. This has been corrected in the PDF and HTML versions of the Article.
Externí odkaz:
https://doaj.org/article/afd9dc4148ce4d2ea26498f41c1aba5d
Autor:
Lauren E. Polander, Paul Pahner, Martin Schwarze, Matthias Saalfrank, Christian Koerner, Karl Leo
Publikováno v:
APL Materials, Vol 2, Iss 8, Pp 081503-081503-5 (2014)
This work addresses the effect of energy level alignment between the hole-transporting material and the active layer in vacuum deposited, planar-heterojunction CH3NH3PbIx−3Clx perovskite solar cells. Through a series of hole-transport materials, wi
Externí odkaz:
https://doaj.org/article/383ac601864045a985ea8c3e65305fef
Autor:
Karin Zojer, Johannes Benduhn, Paul Pahner, Koen Vandewal, Max L. Tietze, Markus Krammer, Bernhard Nell, Karl Leo, Hans Kleemann, Martin Schwarze
Publikováno v:
Nature Communications
Nature Communications, Vol 9, Iss 1, Pp 1-1 (2018)
Nature Communications, Vol 9, Iss 1, Pp 1-1 (2018)
Fermi level control by doping is established since decades in inorganic semiconductors and has been successfully introduced in organic semiconductors. Despite its commercial success in the multi-billion OLED display business, molecular doping is litt
Autor:
Satoshi Kera, Max L. Tietze, Paul Pahner, Reinhard Scholz, Karl Leo, Daniel Kasemann, Fabio Bussolotti, Martin Schwarze, Zhenan Bao, Benjamin D. Naab
Publikováno v:
ACS applied materialsinterfaces. 10(1)
Efficient n-doping of organic semiconductors requires electron-donating molecules with small ionization energies, making such n-dopants usually sensitive to degradation under air exposure. A workaround consists in the usage of air-stable precursor mo
Publikováno v:
Advanced Functional Materials. 25:2701-2707
A typical human being carries billions of silicon-based field-effect transistors in his/her pockets. What makes these transistors work is Fermi level control, both by doping and field effect. Organic semiconductors are the core of a novel flexible el
Autor:
Hans Kleemann, Paul Pahner, Alrun A. Günther, Karl Leo, Daniel Kasemann, Björn Lüssem, Max L. Tietze, Axel Fischer
Publikováno v:
SPIE Proceedings.
Organic electronics hold the promise of enabling the field of flexible electronics. Several novel organic transistor concepts based on the technology of molecular doping are presented that open new directions to improve the performance of OFETs. The
Autor:
Max L. Tietze, Hans Kleemann, Janine Fischer, Lorenzo Burtone, Karl Leo, Paul Pahner, Björn Lüssem
Publikováno v:
Physical Review B. 88
Autor:
Reinhard Scholz, Axel Fischer, Paul Pahner, Thomas Koprucki, Karl Leo, Annegret Glitzky, Klaus Gärtner, Björn Lüssem
Publikováno v:
Physical Review Letters
We demonstrate electric bistability induced by the positive feedback of self-heating onto the thermally activated conductivity in a two-terminal device based on the organic semiconductor ${\mathrm{C}}_{60}$. The central undoped layer with a thickness
Autor:
Björn Lüssem, Thomas Koprucki, Klaus Gärtner, Annegret Glitzky, Karl Leo, Axel Fischer, Paul Pahner, Jürgen Fuhrmann, Reinhard Scholz
Publikováno v:
Organic Electronics
We studied the influence of heating effects in an organic device containing a layer sequence of n-doped/intrinsic/n-doped C60 between crossbar metal electrodes. These devices give a perfect setting for studying the heat transport at high power densit