Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Paul N. Plassmeyer"'
Autor:
Catherine J. Page, Shannon W. Boettcher, Zayd L. Ma, Sophia E. Hayes, Douglas A. Keszler, Keenan N. Woods, Cory K. Perkins, Jinlei Cui, Yvonne Afriyie, Blake A. Hammann, Matthew G. Kast, Paul N. Plassmeyer
Publikováno v:
Chemistry of Materials. 30:7456-7463
Here, we employ a combination of 27Al solid-state nuclear magnetic resonance (SSNMR) and conventional spectroscopic and microscopic techniques to investigate the structural evolution of aqueous aluminum precursors to a uniform and smooth aluminum oxi
Autor:
Douglas A. Keszler, Deok-Hie Park, Paul N. Plassmeyer, Catherine J. Page, Keenan N. Woods, Shannon W. Boettcher, Lisa J. Enman, Brenna L. Kirk, Aidan K. Grealish
Publikováno v:
Chemistry of Materials. 29:8531-8538
Aqueous solution deposition has emerged as a potentially scalable, high-throughput route to functional metal oxide thin films. Aqueous routes, however, generally require elevated processing temperatures to produce fully condensed films that are resis
Autor:
David W. Johnson, Paul N. Plassmeyer, Catherine J. Page, David A. Marsh, Keenan N. Woods, Suzannah R. Wood, Kirsten M. Ø. Jensen, Darren W. Johnson
Publikováno v:
Journal of the American Chemical Society. 139:5607-5613
Amorphous metal oxides are central to a variety of technological applications. In particular, indium gallium oxide has garnered attention as a thin-film transistor channel layer material. In this work we examine the structural evolution of indium gal
Autor:
Tsung-Han Chiang, Paul N. Plassmeyer, Keenan N. Woods, Catherine J. Page, Shannon W. Boettcher, Matthew G. Kast, Aidan K. Grealish, Alexander C. Lygo
Publikováno v:
ACS Applied Materials & Interfaces. 9:10897-10903
Metal oxide thin films are critical components in modern electronic applications. In particular, high-κ dielectrics are of interest for reducing power consumption in metal–insulator–semiconductor (MIS) field-effect transistors. Although thin-fil
Publikováno v:
RSC Advances. 7:7046-7051
Low-temperature routes to solid electrolytes are important for construction of solid-state batteries, electrochromic devices, electrolyte-gated transistors, high-energy capacitors and sensors. Here we report an environmentally friendly aqueous soluti
Autor:
Catherine J. Page, Peter Richter, Sri Sai Phani Kanth Arekapudi, Georgeta Salvan, Tobias Rüffer, Dietrich R. T. Zahn, Jana Kalbacova, Michael Hietschold, Steffen Schulze, Paul N. Plassmeyer, N. Johrmann, Heinrich Lang, Manfred Albrecht, Julia Harzdorf
Publikováno v:
Chemistry of Materials. 28:4917-4927
Recent progress in multiferroic materials and spintronic devices has renewed interest in metal oxide ferromagnetic and ferrimagnetic materials. Here, we report the preparation of thin films of nanocrystalline ferrimagnetic CoFe2O4 (CFO) using an envi
Autor:
Keenan N. Woods, Catherine J. Page, Matt Beekman, Benjamin A. Glassy, Christopher C. Knutson, Kevin M. Norelli, Paul N. Plassmeyer
Publikováno v:
Solid State Sciences. 55:8-12
The effects of precursor solution concentration, composition, and spin-processing parameters on the thickness and electrical properties of ultra-smooth aluminum oxide phosphate (Al2O3−3x(PO4)2x or “AlPO”) thin films prepared using aqueous solut
Publikováno v:
ACS Applied Materials & Interfaces. 7:1678-1684
Amorphous LaAlO3 dielectric thin films were fabricated via solution processing from inorganic nitrate precursors. Precursor solutions contained soluble oligomeric metal-hydroxyl and/or -oxo species as evidenced by dynamic light scattering (DLS) and R
Autor:
Paul N. Plassmeyer, Lisa J. Enman, Ann L. Greenaway, Matthew G. Kast, Gavin Mitchson, Jeffrey Ditto, David C. Johnson, Elizabeth A. Cochran, Chris Siefe, Catherine J. Page, Shannon W. Boettcher
Publikováno v:
Journal of the American Chemical Society. 138(51)
Thin films with tunable and homogeneous composition are required for many applications. We report the synthesis and characterization of a new class of compositionally homogeneous thin films that are amorphous solid solutions of Al2O3 and transition m
Publikováno v:
Thin Solid Films. 548:225-229
The thermal conductivity, measured by the 3ω method, of amorphous films of Al 2 P 1.2 O 6 (AlPO) deposited on Si substrates by an all-aqueous spin-coating technique is 0.93(3) W m − 1 K − 1 . The thermal conductivity of a degenerately doped n -S