Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Paul Marganski"'
Autor:
Karl W. Olander, Tadaharu Watanabe, Robert Torres, Nobuyasu Tomita, Gary Orlando, Paul Marganski, Joseph D. Sweeney
Publikováno v:
Journal of Crystal Growth. 272:836-843
A newly developed technical solution has been developed for hydride gas abatement that utilizes a new material. The ULTIMA-Sorb™ material provides high capacity but low heat of reaction with the hydride gases. The new technology results in a low co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62c44508078ab3e6eed72083688abe8e
https://doi.org/10.1016/j.jcrysgro.2004.09.059
https://doi.org/10.1016/j.jcrysgro.2004.09.059
Autor:
Shaun M. Wilson, Paul Marganski, Joseph Sweeney, Steve Roberge, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain, Yevgeniy V. Kondratenko
Publikováno v:
AIP Conference Proceedings.
As integrated circuit features continue to become smaller, it has become difficult to meet the challenges of shallow junction implant using conventional ion implant dopant species. To meet this challenge, Axcelis has developed the Optima HD IMAX, a n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db3d20fd5ac3573545b71d15c45854ef
https://doi.org/10.1063/1.3033659
https://doi.org/10.1063/1.3033659
Autor:
Joseph Sweeney, Paul Marganski, Robert Kaim, Mike Wodjenski, John Gregg, Sharad Yedave, Steve Sergi, Steve Bishop, David Eldridge, Peng Zou, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain, Yevgeniy V. Kondratenko
Publikováno v:
AIP Conference Proceedings.
Xenon difluoride ( XeF 2 ) has been shown to provide many process benefits when used as a daily maintenance recipe for ion implant. Regularly flowing XeF 2 into the ion source cleans the deposits generated by ion source operation. As a result, signif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1e25d7d5bdc9178549652b7a934a998
https://doi.org/10.1063/1.3033633
https://doi.org/10.1063/1.3033633
Autor:
Sharad Yedave, Joe Sweeney, Oleg Byl, Shkelqim Letaj, Mike Wodjenski, Monica Hilgarth, Paul Marganski, Steve Bishop, David Eldridge, Robert Kaim, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain, Yevgeniy V. Kondratenko
Publikováno v:
AIP Conference Proceedings.
Since the introduction of XeF2 in‐situ cleaning, its use in production implanters has been mainly focused on cleaning ion sources by flowing the cleaning vapor through the source arc chamber. This has been called “Dynamic” in‐situ cleaning.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2f4bef7fe6952c2e1a4a330a1e1278a
https://doi.org/10.1063/1.3033640
https://doi.org/10.1063/1.3033640
Publikováno v:
AIP Conference Proceedings.
Decaborane (B10H14) and Octadecaborane (B18H22) are two promising new doping materials for performing very shallow boron implants at high implanter throughput. However, because these new materials are low‐vapor pressure solids at room temperature,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e194ec3703eefedf6240ed8f40348cc
https://doi.org/10.1063/1.2401489
https://doi.org/10.1063/1.2401489
Publikováno v:
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on.
The toxic and reactive nature of the materials utilized during ion implantation generates safety and environmental challenges. Recent introduction of reduced-pressure gas sources alleviated many concerns associated with delivering dopant species into
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1760e16c45c2c666825a6f5973934de
https://doi.org/10.1109/iit.2002.1258046
https://doi.org/10.1109/iit.2002.1258046
Publikováno v:
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on.
Ion implant processes utilize materials that are potentially toxic to humans and damaging to the environment. Consequently, a number of preventive measures have been implemented to address environmental control and to minimize worker exposure risks.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9908144486fcc321fdaa4eb2d7ac03b
https://doi.org/10.1109/iit.2002.1258044
https://doi.org/10.1109/iit.2002.1258044