Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Paul J. van der Wel"'
Autor:
Martino Lorenzini, Patrick Waltereit, Michael Mikulla, Thomas Roedle, Helmer Konstanzer, Stefan Müller, Roshna George, Michél Simon-Najasek, Oliver Ambacher, Frank Altmann, Paul J. van der Wel, Michael Dammann, Vladimir Polyakov, Rudiger Quay, Fouad Benkhelifa, M. Baeumler, Stephan Maroldt, M. Wespel, Joachim Wagner, Peter Brückner, Andreas Graff, Martin Fagerlind, Wolfgang Bronner
Publikováno v:
Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications.
Long-term stability and reliability of AlGaN/GaN high electron mobility transistors (HEMT) can be validated by various stress tests which allow studying the physical mechanisms responsible for degradation. As the electroluminescence (EL) intensity is
Autor:
Oliver Ambacher, Reza Behtash, F. Bourgeois, M. Baeumler, Vladimir Polyakov, Paul J. van der Wel, K. Riepe, Rudiger Quay, Helmer Konstanzer, Wilfried Pletschen, Patrick Waltereit, T. Rodle, Michael Dammann, Wolfgang Bronner, M. Casar, Jos Klappe, Michael Mikulla, F. Gutle
Results from on-wafer electroluminescence (EL) microscopy on AlGaN/GaN high-electron-mobility transistors with leakage currents varying over four orders of magnitude are presented. In the off-state region the integrated EL intensity is proportional t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2462a0e432abe0b458b5e139006e2c05
https://publica.fraunhofer.de/handle/publica/221516
https://publica.fraunhofer.de/handle/publica/221516