Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Paul J. Timans"'
Publikováno v:
2018 22nd International Conference on Ion Implantation Technology (IIT).
MOS transistor scaling faces major challenges from the rapid rise in the parasitic resistance as the source/drain (s/d) contact area is reduced. Millisecond annealing (MSA) can provide efficient dopant activation at s/d regions and reduce contact res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb1f7ca9f2f2664c5d1553e0a4274534
https://doi.org/10.1109/iit.2018.8807969
https://doi.org/10.1109/iit.2018.8807969
Autor:
Paul J. Timans
Publikováno v:
2018 18th International Workshop on Junction Technology (IWJT).
CMOS scaling is increasingly being hindered by the rapid rise in the transistor's parasitic resistance as the source/drain (s/d) contact area is reduced. Increased dopant activation at the s/d is essential for reducing the contact resistivity but is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91231cbfa06f0f80024fcfcd9bb0fcd1
https://doi.org/10.1109/iwjt.2018.8330285
https://doi.org/10.1109/iwjt.2018.8330285
Autor:
Christian Pfahler, Abhijeet Joshi, L. Rubin, Alexandr Cosceev, Markus Hagedorn, Paul J. Timans, M. Zwissler
Publikováno v:
2016 21st International Conference on Ion Implantation Technology (IIT).
Achieving very high concentrations of electrically active dopants is essential for minimizing parasitic resistances in advanced CMOS devices. Existing methods are severely challenged by the limits on electrical activation of dopants imposed by their
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf3d06c7d5d9be21c5b05d6aadca87d8
https://doi.org/10.1109/iit.2016.7882864
https://doi.org/10.1109/iit.2016.7882864
Publikováno v:
International Journal of Heat and Mass Transfer. 51:4911-4925
Nonuniform absorption of thermal radiation in the rapid thermal processing of wafers is a critical problem facing the semiconductor industry. This paper presents a parametric study of the radiative properties of patterned wafers with the smallest fea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cf25964ef58c9bafd375feb3a95f647
https://doi.org/10.1016/j.ijheatmasstransfer.2008.03.003
https://doi.org/10.1016/j.ijheatmasstransfer.2008.03.003
Autor:
Paul J. Timans
Publikováno v:
Materials Science Forum. :355-374
Radiant energy sources enable rapid and controllable thermal processing of wafers with closed-loop control of wafer temperature. However the use of energy sources that are not in thermal equilibrium with the wafers makes the heating process sensitive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc86afd4dfb85b60ca35e18d7372e6bb
https://doi.org/10.4028/www.scientific.net/msf.573-574.355
https://doi.org/10.4028/www.scientific.net/msf.573-574.355
Publikováno v:
Journal of Heat Transfer. 129:79-90
Temperature nonuniformity is a critical problem in rapid thermal processing (RTP) of wafers because it leads to uneven diffusion of implanted dopants and introduces thermal stress. One cause of the problem is nonuniform absorption of thermal radiatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7c38ec507b0e40e5c93c23276fee5a1
https://doi.org/10.1115/1.2401201
https://doi.org/10.1115/1.2401201
Publikováno v:
2014 International Workshop on Junction Technology (IWJT).
Within-die process variability is a significant problem for advanced CMOS device manufacturing. One important contributor is local temperature non-uniformity during rapid thermal annealing (RTA). RTA with lamp heating provides the high heating and co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8af6cca19bab6a0c6943669df2342661
https://doi.org/10.1109/iwjt.2014.6842023
https://doi.org/10.1109/iwjt.2014.6842023
Publikováno v:
Subsecond Annealing of Advanced Materials ISBN: 9783319031309
Over the last decade millisecond annealing (MSA) has made the transition from a research tool to a key manufacturing technology for advanced complementary metal-oxide-semiconductor (CMOS) devices. MSA provides several unique process capabilities that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e087bd2e3e1f7a18793516b52b67fb93
https://doi.org/10.1007/978-3-319-03131-6_13
https://doi.org/10.1007/978-3-319-03131-6_13
Autor:
S. McCoy, Gary Xing, Greg Stuart, Paul J. Timans, Silke Hamm, David Malcolm Camm, Joseph Cibere
Publikováno v:
2012 12th International Workshop on Junction Technology.
Millisecond annealing (MSA) has proven to be very helpful for continued scaling of CMOS through its applications in forming highly activated ultra-shallow junctions (USJ) and reducing the thermal budget for nickel silicide contact annealing. As devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4961c16176d0ba5fcd56a5e59df28fdb
https://doi.org/10.1109/iwjt.2012.6212811
https://doi.org/10.1109/iwjt.2012.6212811
Autor:
E. J. H. Collart, S. Prussin, Michael Hou, Paul J. Timans, P. M. Kopalidis, Abhijeet Joshi, S. McCoy
Publikováno v:
AIP Conference Proceedings.
Ion Implantation performed at very low substrate temperatures has a very different damage generation and accumulation behavior compared to that for implants at room temperature (RT). Millisecond anneals have a very different activation and damage eli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3362ac44388b03654cf559229d17ae2c
https://doi.org/10.1063/1.4766498
https://doi.org/10.1063/1.4766498