Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Paul Hui"'
Autor:
Juan F. Araneda, Susanne D. Riegel, Thaís Mendonça Barbosa, Paul Hui, Matthew C. Leclerc, Jonathan Ma, Alexander F. G. Maier
Publikováno v:
Journal of Chemical Education. 98:1227-1232
Nuclear magnetic resonance (NMR) spectroscopy is commonly introduced to students in the classroom, but its hands-on use in undergraduate laboratories is far less common. The significant costs to purchase and maintain a traditional high-field NMR spec
Autor:
Juan F. Araneda, Rodrigo Mercado, Susanne D. Riegel, Christopher Green, Paul Hui, Garett M. Leskowitz
Publikováno v:
The Analyst. 146:882-888
A novel 7Li quantitative NMR (qNMR) method to analyze lithium was developed to determine the lithium content in real brine samples using benchtop NMR instruments. The method was validated, and limits of detection and quantification of 40 and 100 ppm,
Autor:
Jiang-Kai Zuo, Muh-Ling Ger, Pete Rodriquez, Xin Lin, Xu Cheng, Won Gi Min, Hongning Yang, Paul Hui, Zhihong Zhang
Publikováno v:
2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
We report our development of a novel NLDMOS in SOI based smart power technology, integrated into Freescale's 0.13μm CMOS platform. The new NLDMOS not only achieves BVDSS up to 140V in both low side and high side operations, but more importantly, the
Autor:
Vishnu K. Khemka, Ronghua Zhu, Xu Cheng, Pete Rodriquez, Bernard Grote, Paul Hui, Weixiao Huang, Muh-Ling Ger, Tahira Khan
Publikováno v:
2009 21st International Symposium on Power Semiconductor Devices & IC's.
In this paper, a unique Combined Lateral Vertical RESURF (CLAVER) LDMOS structure is proposed for breakthrough performance. The structure uses a secondary RESURF design to terminate in the vertical direction to yield a much improved performance trade
Autor:
Muh-Ling Ger, Ronghua Zhu, Cheng Xu, Weixiao Huang, Paul Hui, Vishnu K. Khemka, Pete Rodriquez, Yue Fu, Tahira Khan
Publikováno v:
2009 21st International Symposium on Power Semiconductor Devices & IC's.
In this paper, a novel Schottky diode structure based on the superjunction concept is proposed. The concept is based on 2-carrier current conduction and utilizes both P and N columns for current conduction. The proposed device utilized the P and N su
Autor:
Xu Cheng, Vishnu K. Khemka, Paul Hui, Weixiao Huang, Pete Rodriquez, Tahira Khan, Yue Fu, Muh-Ling Ger, Ronghua Zhu
Publikováno v:
2009 21st International Symposium on Power Semiconductor Devices & IC's.
We report on the experimental demonstration of revolutionary 5.5 V zero-channel power MOSFETs with record low specific on-resistance of 1.0 m#x2126;·mm2 and Figure of Merit (R on ×Q g ) of 8.4 m#x2126;·nC with optimized metal layout. This novel de
Autor:
V. Parthasarathy, S. Chang, Vishnu K. Khemka, A. Bose, M.L. Ger, T. Bettinger, Paul Hui, Ronghua Zhu
Publikováno v:
Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124).
This paper describes the integration of high-voltage and high-performance bipolars into a 0.35 /spl mu/m smart power technology through advanced high-energy implantation techniques. A vertical NPN with peak beta of 150 and BV/sub ceo/ of 23 V and ver
Autor:
S. Chang, Todd C. Roggenbauer, M. Zunino, Ronghua Zhu, M.L. Ger, D. Collins, Vishnu K. Khemka, A. Bose, Vijay Parthasarathy, Paul Hui, R. Baird
Publikováno v:
12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).
This paper reports a 65 V, 0.56 m/spl Omega/.cm/sup 2/ Resurf LDMOS with a wide safe operating area integrated into a 0.35 /spl mu/m CMOS process. The superior performance of the device is achieved by advanced implantation techniques without addition
Autor:
Todd C. Roggenbauer, V. Parthasarathy, M. Zunino, D. Collins, S. Chang, Ronghua Zhu, Vishnu K. Khemka, A. Bose, M.L. Ger, Paul Hui, R. Baird
Publikováno v:
12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).
This paper describes a 0.35 /spl mu/m smart power technology that enables integration of a diverse set of analog and high-voltage power components in a 0.35 /spl mu/m CMOS logic platform for a broad range of voltage applications from 7 V to 50 V.
Publikováno v:
Micromachines, Vol 12, Iss 6, p 651 (2021)
Controlling the motion of macroscopic oscillators in the quantum regime has been the subject of intense research in recent decades. In this direction, opto-mechanical systems, where the motion of micro-objects is strongly coupled with laser light rad
Externí odkaz:
https://doaj.org/article/9be5cbd38d40463c8e4b48e6ae7a823e