Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Paul Hashimoto"'
Autor:
Mary Chen, Hector L. Bracamontes, R. Bowen, Pete Willadsen, Shawn D. Burnham, Paul Hashimoto, D. Wong, Miroslav Micovic, Ming Hu
Publikováno v:
physica status solidi c. 8:2399-2403
For the first time, we report on degradation mechanisms of short gate length (Lg = 0.15 µm) T-gate AlGaN/GaN HEMTs, and compare to previously reported findings for GaN field plate devices of the same gate length. Both types of studied devices were s
Autor:
Paul Hashimoto, Adam J. Williams, Adele E. Schmitz, Keisuke Shinohara, C. Butler, S. Kim, Robert Grabar, D. Regan, P. J. Willadsen, Shawn D. Burnham, Andrea Corrion, Miroslav Micovic, David F. Brown, Ivan Milosavljevic
Publikováno v:
IEEE Transactions on Electron Devices. 58:1063-1067
We have achieved the monolithic integration of two Ill-nitride device structures through the use of etching and re growth by molecular beam epitaxy (MBE). Using this regrowth technique, we integrated enhancement-mode (E-mode) and depletion-mode (D-mo
Autor:
Jeong-Sun Moon, Miroslav Micovic, P. Willadson, Paul Hashimoto, M. Antcliffe, C. McGuire, D. Wong, M. Hu
Publikováno v:
IEEE Electron Device Letters. 29:834-837
We report small- and large-signal performances of 140-nm gatelength field-plated GaN HEMTs at Ka-band frequencies, in which the GaN HEMTs were fabricated with n+ source contact ledge. The parasitic channel resistance is reduced by ~ 50%, whereas the
Autor:
Miroslav Micovic, D. Wong, Jeong-Sun Moon, P. J. Willadsen, Paul Hashimoto, M. Hu, C. McGuire, Shawn D. Burnham, M. Wetzel, David H. Chow, Ivan Milosavljevic
Publikováno v:
IEEE Electron Device Letters. 32:297-299
In this letter, we report the state-of-the-art micro wave noise performance of discrete 0.15-μm-gate-length field plated (FP) GaN HEMTs. The FP GaN HEMTs yielded a peak fτ/fmax of 60 GHz/150 GHz at Vds = 10 V. An fmax of 230 GHz was obtained at Vds
Publikováno v:
physica status solidi (a). 188:31-35
AlGaN/GaN heterojunction field effect transistors (HFETs) have recently demonstrated power-handling capabilities exceeding by almost an order of magnitude those of GaAs-pHEMTs. In addition, several groups have reported that low-noise performance of t
Autor:
Paul Hashimoto, P. Janke, Miroslav Micovic, L.G. McCray, A. Kurdoghlian, Jeong-Sun Moon, Chanh Nguyen, D. Wong
Publikováno v:
IEEE Transactions on Electron Devices. 48:591-596
In this work, we demonstrate state of the art performance of GaN HFETs grown on SiC by rf Nitrogen plasma assisted molecular beam epitaxy (MBE) at 10 and 20 GHz and good power scalability of these devices at 10 GHz. A single stage power amplifier bui
Autor:
P. J. Willadsen, Andrea Corrion, D. Regan, Ivan Milosavljevic, Paul Hashimoto, D. Wheeler, D. F. Brown, Adele E. Schmitz, Keisuke Shinohara, Shawn D. Burnham, C. Butler, Miroslav Micovic
Publikováno v:
IEEE Electron Device Letters. 31:1116-1118
An enhancement-mode (E-mode) AlN/GaN/AlGaN double-heterojunction field-effect transistor (DHFET) with record high-frequency performance is reported. E-mode operation was achieved through vertical scaling of the AlN barrier layer. Parasitic resistance
Autor:
D. Wong, C. Butler, Shawn D. Burnham, Ming Hu, Miroslav Micovic, Paul Hashimoto, Karim S. Boutros
Publikováno v:
physica status solidi c. 7:2010-2012
A new, semi-self-limiting, digital etch process using separate oxygen (O2) and boron trichloride (BCl3) plasmas to sequentially remove layers of material from AlGaN/GaN high electron mobility transistors (HEMTs) on the order of a few angstroms per cy
Autor:
W.-S. Wong, M. Antcliffe, M. Hu, Y. Yoon, P. J. Willadsen, A. Kurdoghlian, Miroslav Micovic, R. Bowen, M. Wetzel, Adele E. Schmitz, David H. Chow, Ivan Milosavljevic, Paul Hashimoto
Publikováno v:
physica status solidi c. 5:2044-2046
At 2006 IEDM outstanding potential of GaN MMIC technology for RF power applications at frequencies exceeding 80 GHz was reported for the first time. The first reported W-band GaN power MMIC had over 16 dB of saturated power gain in a frequency range
Autor:
M. Antcliffe, Shihchang Wu, A. Conway, Paul Hashimoto, Jeong-Sun Moon, D. Wong, Miroslav Micovic, M. Hu, Ivan Milosavljevic
Publikováno v:
IEEE Electron Device Letters. 26:348-350
We report deep-submicrometer gate-recessed and field-plated AlGaN-GaN HEMTs and their state-of-the-art continuous wave (CW) power performance measured at 30 GHz. The AlGaN-GaN HEMTs exhibit a CW power density of 5.7 W/mm with a power-added efficiency