Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Paul H. Townsend"'
Autor:
D. Kumar, J. T. Wetzel, C. Ryu, Paul H. Townsend, T. Tanabe, Melvin P. Zussman, Alvin Leng Sun Loke, Raymond Nicholas Vrtis, S. Simon Wong
Publikováno v:
IEEE Transactions on Electron Devices. 46:2178-2187
This paper addresses the drift of copper ions (Cu/sup +/) in various low-permittivity (low-/spl kappa/) polymer dielectrics to identify copper barrier requirements for reliable interconnect integration in future ULSI. Stressing at temperatures of 150
Publikováno v:
Microelectronic Engineering. 33:327-334
Polymer films of DVS-BCB (CYCLOTENETM 5021) exhibit a combination of material and processing properties which make them an attractive low k interlayer dielectric (ILD) material for integration into IC manufacturing processes. Key DVS-BCB film propert
Autor:
Mitchell G. Dibbs, D. C. Burdeaux, R. M. Dettman, Paul H. Townsend, T. M. Stokich, M. D. Joseph, Carol Mohler, Robert F. Harris, C. C. Fulks, M. F. McCulloch
Publikováno v:
MRS Online Proceedings Library. 265:275-280
This paper discusses the nonhermetic performance of polymer thin film coatings derived from 1,3-bis(2-bicyclo[4.2.0]octa-1,3,5-trien-3-ylethenyl)-1,1,3,3-tetramethyl disiloxane (mixed isomers, CAS 117732-87-3), known also as divinyl siloxane bis-benz
Publikováno v:
Journal of Electronic Materials. 19:1357-1366
A new class of organic dielectrics, benzocyclobutenes, 1, are described and their application to the fabrication of thin film multichip modules is detailed. Key properties for3, a siloxy containing BCB derivative include low dielectric constant (2.7)
Publikováno v:
ACS Symposium Series ISBN: 9780841238572
Polymers for Microelectronics and Nanoelectronics
Polymers for Microelectronics and Nanoelectronics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffda492de01bdee8114e4d2cb25a0422
https://doi.org/10.1021/bk-2004-0874.ch015
https://doi.org/10.1021/bk-2004-0874.ch015
Autor:
Mitchell G. Dibbs, Dean M. Welsh, David J. Brennan, Feng Shaoguang, Debra H. Stutts, James P. Godschalx, Paul H. Townsend, Jeff M. Shaw, Jessica L. Miklovich, Scott Kisting, Yu Chen, Gary E. Spilman
Publikováno v:
MRS Proceedings. 814
New poly(fluorene-thiophene) alternating copolymers are described in which either the dioctylfluorene or bithiophene units in poly(9,9-dioctylfluorene-alt-bithiophene) (F8T2) are replaced by other fluorene or thiophene-based groups, respectively. Imp
Autor:
Robyn B. Boeke, Mitchell G. Dibbs, Ana Claudia Arias, Henning Sirringhaus, Anoop Menon, Jessica L. Miklovich, Paul H. Townsend, J. Devin MacKenzie, Jeff M. Shaw, Dean M. Welsh, David J. Brennan, Catherine Ramsdale, Lisa Creswell
Publikováno v:
Organic Field Effect Transistors II.
Well-characterized F8T2 polyfluorene (Dow Chemical) has been prepared with weight average molecular weights (Mw) ranging from about 20,000 to 120,000. This semiconducting polymer has been used by Plastic Logic to fabricate arrays of 4,800 thin film t
Autor:
Mitchell G. Dibbs, Dean M. Welsh, Robyn B. Boeke, David J. Brennan, Jessica L. Miklovich, Jeff M. Shaw, Paul H. Townsend
Publikováno v:
MRS Proceedings. 771
Polyfluorenes are a class of polyaromatic macromolecules that are characterized by an alternating backbone structure that consists of a 9,9-dialkylfluorene unit in combination with another aromatic group. The nature of this aromatic unit plays a key
Publikováno v:
MRS Proceedings. 612
Adherence to the prescript of Moore's law continues to drive materials development for new and lower dielectric constant materials for use as back-end-of-line (BEOL) interlayer dielectric in advanced logic IC's. As is the case for the current generat
Autor:
J. T. Wetzel, S. Simon Wong, N. Talwalkar, Paul H. Townsend, Raymond Nicholas Vrtis, Alvin Leng Sun Loke, Tsuneaki Tanabe, Melvin P. Zussman, Devendra Kumar
Publikováno v:
MRS Proceedings. 565
The industry is strongly interested in integrating low-κ dielectrics with Damascene copper. Otherwise, with conventional materials, interconnects cannot continue to scale without limiting circuit performance. Integration of copper wiring with silico