Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Paul H. Rekemeyer"'
Autor:
Silvija Gradečak, Olivia Hentz, Chia-Hao Marcus Chuang, Jayce J. Cheng, Moungi G. Bawendi, Paul H. Rekemeyer
Publikováno v:
ACS Applied Energy Materials. 1:1815-1822
The use of zinc oxide (ZnO) nanowires improves charge collection, and consequently power conversion efficiency, in quantum dot (QD) based photovoltaic devices. However, the role of the nanowire geometry (e.g., density, length, and morphology, etc.) r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36cb51d95fb7ca89d5ca16359236a838
https://doi.org/10.1021/acsaem.8b00204
https://doi.org/10.1021/acsaem.8b00204
Publikováno v:
Nano Letters. 17:6221-6227
Lead sulfide quantum dots (PbS QDs) are an attractive material system for the development of low-cost photovoltaics (PV) due to their ease of processing and stability in air, with certified power conversion efficiencies exceeding 11%. However, even t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ec81ec9e5ac9e8b60ea70bda12a39844
https://doi.org/10.1021/acs.nanolett.7b02916
https://doi.org/10.1021/acs.nanolett.7b02916
Autor:
Silvija Gradečak, Tonio Buonassisi, Rupak Chakraborty, Riley E. Brandt, Alex Polizzotti, Paul H. Rekemeyer, Roy G. Gordon, Tom Moriarty, Katy Hartman, Chuanxi Yang, Vera Steinmann
Publikováno v:
BASE-Bielefeld Academic Search Engine
As novel absorber materials are developed and screened for their photovoltaic (PV) properties, the challenge remains to reproducibly test promising candidates for high-performing PV devices. Many early-stage devices are prone to device shunting due t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::53847ee9e14c6a5ac82068890d273fe4
https://doi.org/10.1021/acsami.6b07198
https://doi.org/10.1021/acsami.6b07198
In contrast to the gradual development of mature wafer-scale silicon photovoltaic (PV) technologies, more recent development of nanostructured PV devices has experienced an explosive growth. These materials are solution-processable and as such can be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a803c47b6e12219818f8b97a927f39b
https://doi.org/10.1016/bs.semsem.2018.04.002
https://doi.org/10.1016/bs.semsem.2018.04.002
Autor:
Sehoon Chang, Silvija Gradečak, Moungi G. Bawendi, Patrick O. Brown, Vladimir Bulovic, Jayce J. Cheng, Joel Jean, Paul H. Rekemeyer
Publikováno v:
Advanced Materials. 25:2790-2796
Vertical arrays of ZnO nanowires can decouple light absorption from carrier collection in PbS quantum dot solar cells and increase power conversion efficiencies by 35%. The resulting ordered bulk heterojunction devices achieve short-circuit current d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e70fc6b9b9fd61ab10087e1006ac952f
https://doi.org/10.1002/adma.201204192
https://doi.org/10.1002/adma.201204192
Autor:
Austin Akey, Vera Steinmann, Jing Kong, Silvija Gradečak, Tonio Buonassisi, Paul H. Rekemeyer, Benjamin K. Ofori-Okai, Amanda Youssef, Keith A. Nelson, Rupak Chakraborty, Marek Hempel, Katy Hartman
Publikováno v:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).
Tin (II) monosulfide (SnS) is a promising Earthabundant, non-toxic thin-film absorber due to its near-ideal optoelectronic properties and manufacturability, but low minority-carrier lifetimes limit SnS device efficiencies to below 5%. We employ elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5a7f6fca4e05e4a5d75fde12488f529
https://doi.org/10.1109/pvsc.2016.7749623
https://doi.org/10.1109/pvsc.2016.7749623
Autor:
Tonio Buonassisi, Vera Steinmann, Silvija Gradečak, Loic Martinot, Paul H. Rekemeyer, Sebastian Siol, Rupak Chakraborty, Katy Hartman, Andriy Zakutayev, Alex Polizzotti, Roy G. Gordon, Chuanxi Yang
Publikováno v:
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC).
As novel absorber materials are developed and screened for their photovoltaic (PV) properties, the challenge remains to rapidly test promising candidates in high-performing PV devices. There is a need to engineer new compatible device architectures,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec183bc294389a1ae5a4085f5c3ba6bd
https://doi.org/10.1109/pvsc.2016.7749872
https://doi.org/10.1109/pvsc.2016.7749872
Autor:
Ayman F. Abouraddy, Xiangdong Liang, Silvija Gradečak, Xiaoting Jia, Yoel Fink, Steven G. Johnson, Guillaume Lestoquoy, Paul H. Rekemeyer, Lei Wei, Matthew J. Smith, John D. Joannopoulos, Alexander M. Stolyarov, Alexander Gumennik, Benjamin Jean-baptiste Grena
Publikováno v:
Nature communications. 4
The ability to produce small scale, crystalline silicon spheres is of significant technological and scientific importance, yet scalable methods for doing so have remained elusive. Here we demonstrate a silicon nanosphere fabrication process based on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38b30061903a10d8984e6c860a0195a9
https://pubmed.ncbi.nlm.nih.gov/23900398
https://pubmed.ncbi.nlm.nih.gov/23900398
Autor:
Moungi G. Bawendi, Sehoon Chang, Gyu Weon Hwang, Paul H. Rekemeyer, Chia-Hao Marcus Chuang, Silvija Gradečak
Publikováno v:
Advanced Energy Materials. 6:1600848
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ab6e403fb35a3f2fdc2d6ae98c216c8
https://doi.org/10.1002/aenm.201600848
https://doi.org/10.1002/aenm.201600848
Autor:
Silvija Gradečak, Paul H. Rekemeyer, Eric Mazur, Benjamin Franta, Michael J. Aziz, Hemi H. Gandhi, David Pastor
Publikováno v:
Journal of Applied Physics. 118:225303
Hyperdoped black silicon fabricated with femtosecond laser irradiation has attracted interest for applications in infrared photodetectors and intermediate band photovoltaics due to its sub-bandgap optical absorptance and light-trapping surface. Howev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ce6ca0443727b8fa0dac74251a77a97
https://doi.org/10.1063/1.4937149
https://doi.org/10.1063/1.4937149