Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Paul Gutwin"'
Publikováno v:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
New tools and methodologies are fused with conventional elements of the process-design-kit (PDK) and design enablement to introduce a rigorous yet fast and agile technology prototyping platform. This design technology cooptimization (DTCO) solution r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::916a76e562901d13ea67e443e7c2a517
https://doi.org/10.23919/sispad49475.2020.9241669
https://doi.org/10.23919/sispad49475.2020.9241669
Publikováno v:
SPIE Proceedings.
As pitch scaling is becoming constrained not only by lithographic resolution limits but alos by fundamental device and interconnect challenges the semiconductor industry has turned to cell-height reduction as a means of achieving competitive area sca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd136de4f2be1bd63a2afc7c6851b7b7
https://doi.org/10.1117/12.2259981
https://doi.org/10.1117/12.2259981
Publikováno v:
SPIE Proceedings.
This paper reviews the most critical components of a ‘holistic’ DTCO flow for an advanced technology node and in doing so quantifies the differences between 7nm technology node definitions implemented with extreme ultraviolet and 193nm immersion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af14c1458b31bde642c2af2130b3ae8c
https://doi.org/10.1117/12.2175509
https://doi.org/10.1117/12.2175509
Publikováno v:
SPIE Proceedings.
This paper reviews the escalation in design constraints imposed on 2 nd level wiring by multiple patterning exposure techniques in the 10NM technology node (i.e. ~45nm wiring pitch) relative to the 14NM technology node (i.e. 64nm wiring pitch). Speci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43fc14c7138a778fd22a7cd507ba4c6e
https://doi.org/10.1117/12.2045958
https://doi.org/10.1117/12.2045958