Zobrazeno 1 - 10
of 386
pro vyhledávání: '"Paul Fons"'
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-8 (2024)
Abstract Polarons can control carrier mobility and can also be used in the design of quantum devices. Although much effort has been directed into investigating the nature of polarons, observation of defect-related polarons is challenging due to elect
Externí odkaz:
https://doaj.org/article/dd9096bcc50a43f39e517b8ab19860e1
Autor:
Takumi Fukuda, Kotaro Makino, Yuta Saito, Paul Fons, Atsushi Ando, Takuya Mori, Ryo Ishikawa, Keiji Ueno, Jessica Afalla, Muneaki Hase
Publikováno v:
APL Materials, Vol 12, Iss 2, Pp 021102-021102-11 (2024)
Layered transition-metal dichalcogenides (TMDs) are model systems to explore ultrafast many-body interactions and various nonlinear optical phenomena. For the application of TMD-based optoelectronic devices capable of ultrafast response, it is essent
Externí odkaz:
https://doaj.org/article/a4ddb1b4bb6348eb99b3c63c905ca11a
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
Abstract Two-dimensional (2D) van der Waals (vdW) materials possess a crystal structure in which a covalently-bonded few atomic-layer motif forms a single unit with individual motifs being weakly bound to each other by vdW forces. Cr2Ge2Te6 is known
Externí odkaz:
https://doaj.org/article/da5c5371c0ba47d7882adc456303576c
Publikováno v:
ACS Omega, Vol 2, Iss 9, Pp 6223-6232 (2017)
Externí odkaz:
https://doaj.org/article/8c4c1edb42ff4adbbe44841dbe1c8ac3
Publikováno v:
New Journal of Physics, Vol 23, Iss 2, p 023034 (2021)
We investigate ultrafast phonon dynamics in the Bi _1− _x Sb _x alloy system for various compositions x using a reflective femtosecond pump-probe technique. The coherent optical phonons corresponding to the A _1 _g local vibrational modes of Bi–B
Externí odkaz:
https://doaj.org/article/1d920cb560b2414ab5816714b4036796
Publikováno v:
AIP Advances, Vol 6, Iss 4, Pp 045220-045220-5 (2016)
A two-step growth method is proposed for the fabrication of highly-oriented Sb2Te3 and related superlattice films using sputtering. We report that the quality and grain size of Sb2Te3 as well as GeTe/Sb2Te3 superlattice films strongly depend on the t
Externí odkaz:
https://doaj.org/article/acc43b32549f470786a9eae5f812c295
Autor:
Yuta Saito, Shogo Hatayama, Wen Hsin Chang, Naoya Okada, Toshifumi Irisawa, Fumihiko Uesugi, Masaki Takeguchi, Yuji Sutou, Paul Fons
Publikováno v:
Materials Horizons.
Here, we report on the growth of GeTe2 thin films, a metastable phase. The GeTe2 film was found to be a semiconductor with a layered structure.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ab9f61706dc2525fb459fe979787fa8
https://doi.org/10.1039/d2mh01449a
https://doi.org/10.1039/d2mh01449a
Autor:
Federica Bondino, Jhonatan Rodriguez Pereira, Jens Rüdiger Stellhorn, Stepan A. Rozhkov, Alexey A. Kononov, Yi Shuang, Yuji Sutou, Yuta Saito, Alexander V. Kolobov, Shogo Hatayama, Igor Píš, Milos Krbal, Vit Prokop, Jan Mistrik, Shinjiro Hayakawa, Paul Fons
Publikováno v:
ACS Applied Nano Materials. 4:8834-8844
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0222cdf45347302e5d061ceede6bd634
https://doi.org/10.1021/acsanm.1c01504
https://doi.org/10.1021/acsanm.1c01504
A NaCl-type SmTe film showed remarkable electrical contrast (> 105) between as-deposited and annealed films in the absence of a transition in the crystal structure. A rigid-band shift induced by a valency transition between Sm2+ and Sm3+ was found to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a13e966fc29c3d3d80c6e71406cea5c
https://doi.org/10.21203/rs.3.rs-2318820/v1
https://doi.org/10.21203/rs.3.rs-2318820/v1
Autor:
N. I. Anisimova, A. A. Kononov, G.A. Bordovsky, Alexandr Kolobov, René Castro, Paul Fons, Yuta Saito
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:14072-14078
Sb2Te3 is an endpoint of the GeTe-Sb2Te3 quasi-binary tie-line that represents phase-change alloys widely used in optical and non-volatile phase-change memory devices. In the crystalline form it is also a prototypical topological insulator with a lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3f78a15c46fe0dc6f7d87e3a60e373f
https://doi.org/10.1007/s10854-021-05986-4
https://doi.org/10.1007/s10854-021-05986-4