Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Paul F. Findeis"'
Autor:
Susan G. Conti, Pratik P. Joshi, Michael D. Steigerwalt, Paul F. Findeis, William Brennan, Raymond Van Roijen, Dane Bailey, Javier Ayala
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 27:364-369
Nitrogen purge of wafer carriers is driving defect density reduction at critical process steps. We discuss several examples of defect creation related to the environment of the semiconductor wafer and how nitrogen purge of carriers improves defect de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39efff4c55c2171875fe526c2f507e09
https://doi.org/10.1109/tsm.2014.2337282
https://doi.org/10.1109/tsm.2014.2337282
Publikováno v:
ASMC 2013 SEMI Advanced Semiconductor Manufacturing Conference.
Nitrogen purge of wafer carriers is driving defect density reduction at critical process steps. We discuss the mechanism of defect creation and how nitrogen purge improves defect density. We report on experimental split data from in line inspection a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffc2cbbecbd52d927109c8096779755b
https://doi.org/10.1109/asmc.2013.6552756
https://doi.org/10.1109/asmc.2013.6552756