Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Paul F. Baude"'
Autor:
Dawn V. Muyres, Steven D. Theiss, Paul F. Baude, Tommie W. Kelley, Michael A. Haase, Dennis E. Vogel, Chris Gerlach, David E. Ender
Publikováno v:
Chemistry of Materials. 16:4413-4422
Research in organic electronics has included advances in materials, devices, and processes. Device architectures, increasingly complex circuitry, reliable fabrication methods, and new semiconductors are enabling the incorporation of organic electroni
Autor:
Steven D. Theiss, Dawn V. Muyres, Tommie W. Kelley, Paul F. Baude, Michael A. Haase, Patrick R. Fleming
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 22:1892-1895
The use of polymeric aperture masks to fabricate high performance pentacene-based integrated circuits is presented. The aperture masks are fabricated using a laser ablation process with capabilities of generating 10 μm features. A mask set consistin
Autor:
T. Marshall, Paul F. Baude, Kwok Keung Law, G. M. Haugen, M. Buijs, K.W. Haberern, M. A. Haase, Tj. Miller, J.M. Gaines
Publikováno v:
Materials Science and Engineering: B. 43:49-54
We have studied the device properties of blue-green II–VI lasers pertaining to the issues of thermal effects, leakage current and lateral waveguiding. Improved heat sinking by epi-down mounting was found to double the device lifetime. Leakage, main
Autor:
G. M. Haugen, Paul F. Baude, T. J. Miller, K. K. Law, Jamie Phillips, Michael A. Haase, P. K. Bhattacharya, K. Smekalin
Publikováno v:
Applied Physics Letters. 68:3591-3593
Conduction‐band offsets in wide‐band‐gap CdZnSSe/ZnSSe single quantum well structures have been characterized by deep level transient spectroscopy (DLTS) measurements. 50 A thick Cd0.3Zn0.7S0.06Se0.94 single quantum wells with ZnS0.06Se0.94 bar
Publikováno v:
Applied Physics Letters. 67:3862-3864
The initial degradation of II–VI light emitting devices, namely the 〈100〉 dark line defect formation in CdZnSe quantum well structures formed during laser or light emitting diode (LED) operation, has been investigated. Optically degraded quantu
Publikováno v:
MRS Proceedings. 771
We report here methods of surface modification and device construction which consistently result in lab-scale pentacene-based TFTs with mobilities at or above 5 cm2/Vs. Surface modifications include polymeric ultrathin films presenting a passivated i
Autor:
Hwa Cheng, M.S. Hagedorn, Paul F. Baude, Supratik Guha, G. E. Hofler, Michael A. Haase, B. J. Wu, Jun Qiu, James M. DePuydt
Publikováno v:
Applied Physics Letters. 63:2315-2317
Blue‐green (λ=511 nm) separate confinement laser structures based on lattice‐matched MgZnSSe‐ZnSSe‐CdZnSe have been grown by molecular beam epitaxy. Wide stripe gain‐guided devices have been fabricated from several such wafers. These devic
Autor:
Dennis E. Vogel, Dawn V. Muyres, Paul F. Baude, Michael A. Haase, David E. Ender, Steven D. Theiss, Chris Gerlach, Tommie W. Kelley
Publikováno v:
SID Symposium Digest of Technical Papers. 35:1192
Recent efforts at 3M have extended the use of polymeric aperture masks and surface modification methods to produce large area (approximately 6″×6″) arrays of high mobility pentacene TFTs on a variety of substrates. Results of high performance or