Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Paul E. Gee"'
Publikováno v:
Surface Science. 347:289-302
Arsine adsorption on c(2 × 8) and (1 × 6) GaAs(001) at 303–573 K has been studied by internal-reflection infrared spectroscopy. We have discovered that arsine adsorbs onto two sites: second-layer Ga atoms and Ga dimers. On the c(2 × 8), arsine d
Publikováno v:
Surface Science. 330:135-146
The sites for trimethylgallium (TMGa) adsorption on c(2 × 8) GaAs(001) have been identified by hydrogen titration of the surface before and after adsorbing the organometallic molecules. There are four main adsorption sites on GaAs(001): As dimers, G
Publikováno v:
Surface Science. 323:6-18
The adsorption of hydrogen atoms on the c(2 × 8) and (1 × 6) reconstructions of GaAs(001) has been studied by multiple internal-reflection infrared spectroscopy. A series of vibrational bands are observed which are due to arsenic hydrides, bridging
Publikováno v:
Physical Review Letters. 72:250-253
The infrared spectra of adsorbed hydrogen and deuterium on c(2\ifmmode\times\else\texttimes\fi{}8) and (2\ifmmode\times\else\texttimes\fi{}6) GaAs(100) contain a series of bands from 2200 to 1200 (1600 to 1000) ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}
Publikováno v:
Catalysis Letters. 9:103-113
Alkali metal zeolites and metal oxides were used for the aldol condensation of n-butanal to 2-ethyl-2-hexenal. The order of activity at 150 °C and 1 atm. was: CsNaY > NaY > LiNaY > MgO >Al2O3. Selectivity to 2-ethyl-2-hexenal was 100% for both pure
Autor:
Herbert D. Kaesz, Burkhard Niemer, Robert F. Hicks, Paul E. Gee, William K. Stovall, Alfred A. Zinn
Publikováno v:
Applied Physics Letters. 61:1793-1795
Highly reflecting, amorphous, thin films of tungsten are obtained by the decomposition of bis‐cyclopentadienyltungstendihydride, (η‐C5H5)2WH2, in 1 atm of hydrogen at 350 °C. Auger depth profiling reveals that the carbon and oxygen content of t
Publikováno v:
MRS Proceedings. 340
Trimethylgallium (TMGa) adsorption on GaAs(100) has been studied by infrared spectroscopy. The adsorbed TMGa exhibits up to five C-H stretching vibrations between 2700 and 3000 cm−1 and five C-H deformations between 1100 and 1500 cm−1. The adsorb
Autor:
Paul E. Gee, Robert F. Hicks
Publikováno v:
MRS Proceedings. 222
We have studied the adsorption of hydrogen atoms on GaAs (100) by multiple internal reflection infrared spectroscopy. The crystal was etched in 1:1:10 H3PO4/H2O2-/H2O solution and in 1:1 HCI/H2O solution, then annealed to 580°C in the vacuum chamber
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