Zobrazeno 1 - 10 of 25 pro vyhledávání: '"Paul C. Lemaire"'
2
Extending growth inhibition during area-selective atomic layer deposition of Al
Autor: Wanxing, Xu, Paul C, Lemaire, Kashish, Sharma, Dennis M, Hausmann, Sumit, Agarwal
Publikováno v: Chemical communications (Cambridge, England). 58(46)
During area-selective atomic layer deposition (ALD) based on growth inhibitors, nucleation eventually occurs as the metal precursor reacts with the surface through secondary pathways. We show that ALD of Al
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=pmid________::1f4aa9502128d2539df09e67b19ae402
https://pubmed.ncbi.nlm.nih.gov/35593222
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3
Ultraviolet photo-enhanced atomic layer deposition for improving dielectric properties of low temperature deposited Al2O3
Autor: Konner E. K. Holden, Shane M. Witsell, Paul C. Lemaire, John F. Conley
Publikováno v: Journal of Vacuum Science & Technology A. 40
Thin films of Al2O3 are deposited using in situ ultraviolet (UV) light enhanced atomic layer deposition (ALD) with trimethylaluminum and H2O and compared to those deposited using traditional thermal ALD at low temperatures of 45 and 80 °C. Coexposin
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::285ab17770a694e05bcca9e7e55e27b1
https://doi.org/10.1116/6.0001865
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4
Selective deposition of AlOx for Fully Aligned Via in nano Cu interconnects
Autor: K. Sharma, Thomas J. Haigh, Dennis M. Hausmann, James J. Demarest, Peethala Cornelius Brown, Paul C. Lemaire, James Chingwei Li, Arpan Mahorowala, Hosadurga Shobha, Hsiang-Jen Huang, Balasubramanian S. Pranatharthi Haran, Son V. Nguyen, P. Ramani
Publikováno v: 2021 IEEE International Interconnect Technology Conference (IITC).
AlOx was selectively deposited on top of SiCOH in 32 nm pitch Cu-SiCOH pattern to form a Fully Aligned Via (FAV) test structure. Selective deposition process performance and its integration into the 5nm BEOL FAV structure were evaluated. The selectiv
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6872fbfe747685d65494c0fb36bf26c2
https://doi.org/10.1109/iitc51362.2021.9537315
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5
Insight into the removal and reapplication of small inhibitor molecules during area-selective atomic layer deposition of SiO2
Autor: Marc J. M. Merkx, Rick G. J. Jongen, A. Mameli, Wilhelmus M. M. Kessels, Paul C. Lemaire, Dennis M. Hausmann, K. Sharma, Adriaan J. M. Mackus
Publikováno v: Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, 39(1):012402. AVS Science and Technology Society
As the semiconductor industry progresses toward more complex multilayered devices with ever smaller features, accurately aligning these layers with respect to each other has become a bottleneck in the advancement to smaller transistor nodes. To avoid
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e9ae3942a81d1da25c06d21178c3af54
https://research.tue.nl/nl/publications/3f414074-7ce4-4c7c-8474-1937bf05d7a9
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7
Thermally Driven Self-Limiting Atomic Layer Etching of Metallic Tungsten Using WF6 and O2
Autor: Paul C. Lemaire, Gregory N. Parsons, Wenyi Xie
Publikováno v: ACS Applied Materials & Interfaces. 10:9147-9154
The semiconductor industry faces a tremendous challenge in the development of a transistor device with sub-10 nm complex features. Self-limiting atomic layer etching (ALE) is essential for enabling the manufacturing of complex transistor structures.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cc5c29dcba8ed910e5a8226dae8f1a0d
https://doi.org/10.1021/acsami.7b19024
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8
Reversible Low-Temperature Metal Node Distortion during Atomic Layer Deposition of Al2O3 and TiO2 on UiO-66-NH2 Metal–Organic Framework Crystal Surfaces
Autor: Gregory N. Parsons, Paul C. Lemaire, Dennis T. Lee, Junjie Zhao
Publikováno v: ACS Applied Materials & Interfaces. 9:22042-22054
Metal–organic frameworks (MOFs) are chemically functionalized micro- and mesoporous materials with high surface areas and are attractive for multiple applications including filtration, gas storage, and catalysis. Postsynthetic modification (PSM), v
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6e65453d54fb0c481369fe8e6d72acb1
https://doi.org/10.1021/acsami.7b05214
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9
Mechanism for growth initiation on aminosilane-functionalized SiO2 during area-selective atomic layer deposition of ZrO2
Autor: Ryan J. Gasvoda, K. Sharma, Sumit Agarwal, Wanxing Xu, Paul C. Lemaire, Dennis M. Hausmann
Publikováno v: Journal of Vacuum Science & Technology A. 39:032402
The mechanism for growth initiation on the nongrowth surface during area-selective atomic layer deposition (ALD) processes is not well understood. In this study, we examine the ALD of ZrO2 on a SiO2 surface functionalized with alkylated-aminosilane i
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aa504190bac76f4f2367bf6f11534ea0
https://doi.org/10.1116/6.0000699
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10
(Invited) Using Inherent Substrate-Dependent Nucleation to Promote Metal and Metal Oxide Selective-Area Atomic Layer Deposition
Autor: Chris Oldham, Paul C. Lemaire, Gregory N. Parsons, Berç Kalanyan, Sarah E. Atanasov
Publikováno v: ECS Transactions. 75:77-83
Substrate-dependent nucleation during CVD has been heavily studied, and several strategies for selective growth are known. Compared to CVD, atomic layer deposition generally allows more precise control over surface reactions, but to date, the most su
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::06c666758cbed1cafca551d924958047
https://doi.org/10.1149/07506.0077ecst
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