Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Paul B. Fischer"'
Publikováno v:
SciPost Physics, Vol 17, Iss 3, p 070 (2024)
Many superconducting devices rely on the finite gap in the excitation spectrum of a superconductor: thanks to this gap, at temperatures much smaller than the critical one the number of excitations (quasiparticles) that can impact the device's behavio
Externí odkaz:
https://doaj.org/article/c3e407c94fb845e581cca050c5939770
Publikováno v:
Scripta Metallurgica et Materialia. 33:1537-1544
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8478ee6f846109533b1ac5ec05e8da23
https://doi.org/10.1016/0956-716x(95)00396-d
https://doi.org/10.1016/0956-716x(95)00396-d
Autor:
Paul B. Fischer, Stephen Y. Chou
Publikováno v:
Microelectronic Engineering. 21:311-314
Sub-50 nm high aspect-ratio pillars, ridges, and trenches have been patterned in Si and SiGe using reactive ion etching (RIE) with Cr masks defined by ultra-high resolution electron beam lithography and a lift-off process. Using an optimized mixture
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a96f5c6dcc9d57d9850b28578959921
https://doi.org/10.1016/0167-9317(93)90080-o
https://doi.org/10.1016/0167-9317(93)90080-o
Autor:
Waleed Khalil, Thomas Y. Hsiang, R. Sobolewski, Paul B. Fischer, Y. Liu, Stephen Y. Chou, Sotiris Alexandrou
Publikováno v:
50th Annual Device Research Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea162a50cff97c2be1c5d224db04dae0
https://doi.org/10.1109/drc.1992.671911
https://doi.org/10.1109/drc.1992.671911
Publikováno v:
Journal of Applied Physics. 76:6673-6675
Using electron beam nanolithography and electroplating, arrays of Ni pillars on silicon that have a uniform diameter of 35 nm, a height of 120 nm, and a period of 100 nm were fabricated. The density of the pillar arrays is 65 Gbits/in.2—over two or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28bb1edf8315dc1f87646dc2ac557102
https://doi.org/10.1063/1.358164
https://doi.org/10.1063/1.358164
Publikováno v:
International Electron Devices Meeting 1991 [Technical Digest].
Metal-semiconductor-metal (MSM) photodetectors with nanoscale finger spacing and finger width have been fabricated on MBE (molecular beam epitaxy)-grown GaAs. The smallest finger spacing and width are 25 nm and 15 nm, respectively. Direct dynamic mea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f9a7f75b69715a79299505a3d67ff2d
https://doi.org/10.1109/iedm.1991.235316
https://doi.org/10.1109/iedm.1991.235316
Autor:
Stephen Y. Chou, Paul B. Fischer
Publikováno v:
Applied Physics Letters. 62:2989-2991
Gratings of 10 nm wide metal lines 30 nm apart, and quantum transistor gates with 10 nm wide gaps over 300 nm long between two metal rectangles have been repeatedly achieved on thick GaAs substrates using a modified scanning electron microscope opera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80a2c6d0e76fa5b22673f01a801aba61
https://doi.org/10.1063/1.109166
https://doi.org/10.1063/1.109166
Autor:
Stephen Y. Chou, Paul B. Fischer
Publikováno v:
Applied Physics Letters. 62:1414-1416
We present the fabrication of sub‐50 nm Si pillars, ridges, and trenches with aspect ratios greater than 10 using ultrahigh resolution electron beam lithography and chlorine based reactive ion etching. These nanoscale Si features can be further red
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::440b3aa8f5c2593cc3cc51269f53bec2
https://doi.org/10.1063/1.108696
https://doi.org/10.1063/1.108696
Publikováno v:
IEEE Transactions on Magnetics. 28:3138-3140
A novel technique which allows the true magnetic charge distribution of a sample to be obtained from a raw MFM image by deconvolution is presented. The formation of magnetic force microscopy (MFM) images can be considered as a convolution of the tip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc538aeea00339aa7787787e33c61541
https://doi.org/10.1109/20.179737
https://doi.org/10.1109/20.179737
Publikováno v:
Applied Physics Letters. 61:477-479
We have fabricated metal‐semiconductor‐metal (MSM) photodetectors with the smallest finger spacing and finger width of 25 nm on molecular beam epitaxy grown GaAs. Direct current measurement shows that they have low dark current and high sensitivi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5472fd4eef3633f8481d84f984443837
https://doi.org/10.1063/1.107862
https://doi.org/10.1063/1.107862