Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Paul A. Rabidoux"'
Autor:
Min Yang, S.C. Ramac, Qingyun Yang, D.M. Kuchta, J.T. Marsh, Dennis L. Rogers, A.D. Ticknor, Kern Rim, Diane C. Boyd, A. Upham, Paul A. Rabidoux, Jeremy D. Schaub, F. Rodier, J.J. Welser
Publikováno v:
IEEE Electron Device Letters. 23:395-397
We report a novel silicon lateral trench photodetector that decouples the carrier transit distance from the light absorption depth, enabling both high speed and high responsivity. The photodetector, fabricated with fully VLSI compatible processes, ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cc82f123b271ed1c68b22635f55be44
https://doi.org/10.1109/led.2002.1015212
https://doi.org/10.1109/led.2002.1015212
Publikováno v:
SPIE Proceedings.
Excessive dark loss has been observed along the edge nearest the lid of aged chemically amplified resist blanks, which was traced to organic acid contamination evolving from the acrylic plastic lid of the shipping box. Thermal Gravimetric Analysis (T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d6f3de7470ad5e802e1026c27f608f6
https://doi.org/10.1117/12.632223
https://doi.org/10.1117/12.632223
Autor:
Robert Lang, Wayne M. Moreau, David R. Medeiros, Christina Deverich, Arpan P. Mahorowala, Wenjie Li, Wei He, Marie Angelopoulos, Karen Petrillo, Paul A. Rabidoux, Chester Huang, Wu-Song Huang
Publikováno v:
SPIE Proceedings.
The mask fabrication industry is slowly migrating to chemically amplified (CA) resists to take the advantages of their high contrast, resolution, and sensitivity. During this migration process, the industry has encountered several problems associated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18991d5d6696d56d2ba8073b1522fa51
https://doi.org/10.1117/12.504049
https://doi.org/10.1117/12.504049
Autor:
Paul A. Rabidoux, William A. Aaskov, Karen Petrillo, Christina Deverich, Peter Levin, Wu-Song Huang, Wayne M. Moreau, Andrew J. Watts, David Madeiros, Thomas J. Cardinali, Marie Angelopoulos
Publikováno v:
SPIE Proceedings.
KRS-XE is a chemically amplified resist developed to enable electron-beam lithography for mask making at the 100nm node. This material has been shown to provide an excellent process window for mask manufacturing at this node. Characterization of this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a57036ce0f89acb62cb8260a01dcdc6b
https://doi.org/10.1117/12.476946
https://doi.org/10.1117/12.476946
Autor:
Karen Petrillo, David R. Medeiros, Barbara Bates Peck, Wu-Song Huang, Christina Deverich, Brian Ashe, Marie Angelopoulos, Wayne M. Moreau, Paul A. Rabidoux
Publikováno v:
21st Annual BACUS Symposium on Photomask Technology.
The traditional mask making process uses chain scission-type resists such as PBS, poly(butene-1-sulfone), and ZEP, poly(methyl a-chloroacrylate-co-a-methylstyrene) for making masks with dimensions greater than 180nm. PBS resist requires a wet etch pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1157c4d791d3526dde533ac6b0ba2059
https://doi.org/10.1117/12.458348
https://doi.org/10.1117/12.458348
Autor:
Steven J. Holmes, Paul A. Rabidoux, Christopher J. Progler, Alfred K. K. Wong, Ben R. Vampatella, David V. Horak, Scott M. Mansfield, Deborah A. Ryan, Richard A. Ferguson, Lars W. Liebmann, Peter Talvi, Allen H. Gabor, Sadanand V. Deshpande, Timothy A. Brunner, Chen Jia, Qingyun Yang, Chienfan Yu, Norman Chen, Len Y. Tsou, Antoinette F. Molless
Publikováno v:
SPIE Proceedings.
The line-width variation of a 193 nm lithographic process utilizing a 0.60 NA scanner and a binary reticle is compared to that of a 248 nm lithographic processes utilizing a 0.68 NA scanner and a variety of reticle technologies. These include binary,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c08d6a15807b21c2125f7e7b1c0dbb59
https://doi.org/10.1117/12.435708
https://doi.org/10.1117/12.435708
Autor:
Steven J. Holmes, Arpan P. Mahorowala, Linda M. Hadel, Chen Jia, Kelly Malone, Ronald A. DellaGuardia, Timothy J. Dalton, Paul A. Rabidoux, Stephen E. Greco, Karen Petrillo, Richard A. Ferguson
Publikováno v:
SPIE Proceedings.
This paper presents data obtained in developing a process using 193 nm lithography and the RELACS contact hole shrink technique. For the line/space levels, process windows showing resist performance using chrome on glass masks are presented. Data sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8b7d96930b0c1804ecb9fd9ee39b2c6
https://doi.org/10.1117/12.435636
https://doi.org/10.1117/12.435636
Autor:
Mark C. Hakey, David V. Horak, Steven J. Holmes, Paul A. Rabidoux, Toshiharu Furukawa, Mahmoud Khojasteh, Wu-Song Huang, Niranjan M. Patel, K. Rex Chen
Publikováno v:
SPIE Proceedings.
Lithographic scaling entails continuously increasing resolution while at the same time improving the tolerance control on the printed images. Typically, this has been done by using shorter actinic wavelengths, increasing numerical aperture, compensat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14f77f780a44e2822307d055b701c400
https://doi.org/10.1117/12.350218
https://doi.org/10.1117/12.350218
Autor:
Anthony K. Stamper, John L. Sturtevant, Stephen E. Knight, Ed Valentine, Steven J. Holmes, Denis J Poley, Will Conley, Ahmad D. Katnani, Linda K. Somerville, Paul A. Rabidoux, Thomas L. McDevitt, James Thomas Fahey
Publikováno v:
SPIE Proceedings.
The role of the wafer substrate in processing of chemically amplified DUV photoresists has been examined. Various substrates including silicon, oxide, titanium nitride, silicon nitride and metals were investigated with both positive and negative tone
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c186d9e6fd97180c684b84796c02a08f
https://doi.org/10.1117/12.175469
https://doi.org/10.1117/12.175469
Autor:
Steven J. Holmes, Paul A. Rabidoux, Magda Petryniak, Ratnam Sooriyakumaran, John L. Sturtevant, Richard A. Ferguson, Ronald M. Martino, William R. Brunsvold, Jeffrey D. Gelorme, Will Conley
Publikováno v:
Advances in Resist Technology and Processing X.
This paper discusses a new negative tone aqueous base developable photoresist that has demonstrated excellent sub-half micron resolution with commercially available DUV (deep ultraviolet) exposure systems. This system which consists of a phenolic res
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d23d9a79e1feb85867fb8af3d502cc8
https://doi.org/10.1117/12.154744
https://doi.org/10.1117/12.154744