Zobrazeno 1 - 10
of 101
pro vyhledávání: '"Paul A. Crowell"'
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-7 (2024)
Abstract Thin ferromagnetic films possessing perpendicular magnetic anisotropy derived from the crystal lattice can deliver the requisite magnetocrystalline anisotropy density for thermally stable magnetic memory and logic devices at the single-digit
Externí odkaz:
https://doaj.org/article/834bd46bb65948a7a6d9d9627efb643b
Autor:
Tao Qu, Aneesh Venugopal, James M. Etheridge, William K. Peria, Karthik Srinivasan, Bethanie J. H. Stadler, Paul A. Crowell, R. H. Victora
Publikováno v:
IEEE Access, Vol 8, Pp 216960-216968 (2020)
Magnon scattering enables non-linear microwave devices, such as frequency selective limiters and signal to noise enhancers. It may also impact information transfer within spintronic devices. Here, a quantitative understanding of magnon processes in t
Externí odkaz:
https://doaj.org/article/e637fb88c2fb4ca6bc3820562b9ef3f9
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 4, Iss 1, Pp 26-34 (2018)
A graphene-based spin-diffusive neural network is presented in this paper that takes advantage of the locally tunable spin transport of graphene and the non-volatility of nanomagnets. By using electrostatically gated graphene as spintronic synapses,
Externí odkaz:
https://doaj.org/article/887a37aa8e2647e2b65a3a493d2b4e25
Autor:
Changjiang Liu, Sahil J. Patel, Timothy A. Peterson, Chad C. Geppert, Kevin D. Christie, Gordon Stecklein, Chris J. Palmstrøm, Paul A. Crowell
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-7 (2016)
In semiconductor spintronic devices, Hanle precession allows for electrical detection of spin accumulation however it is inhibited at room temperature in GaAs by magnetic-field effects. Here, the authors present an alternative method for detecting sp
Externí odkaz:
https://doaj.org/article/8726d5081cfd4c3a82889565ee6a79be
Independent gate control of injected and detected spin currents in CVD graphene nonlocal spin valves
Publikováno v:
AIP Advances, Vol 8, Iss 1, Pp 015129-015129-8 (2018)
Graphene is an ideal material for spintronic devices due to its low spin-orbit coupling and high mobility. One of the most important potential applications of graphene spintronics is for use in neuromorphic computing systems, where the tunable spin r
Externí odkaz:
https://doaj.org/article/45b9f0befa4e472aabaaa21a74688d37
Autor:
Brett Heischmidt, Maituo Yu, Derek Dardzinski, James Etheridge, Saeed Moayedpour, Vlad S. Pribiag, Paul A. Crowell, Noa Marom
Publikováno v:
Physical Review Materials. 7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c5afd4a2fa07315ce42592ba5488657
https://doi.org/10.1103/physrevmaterials.7.026203
https://doi.org/10.1103/physrevmaterials.7.026203
Publikováno v:
Physical Review B. 106
Spin-helical states, which arise in quasi-one-dimensional (1D) channels with spin-orbital (SO) coupling, underpin efforts to realize topologically-protected quantum bits based on Majorana modes in semiconductor nanowires. Detecting helical states is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::850eb75b94b74c07650989cf7e0634ad
https://doi.org/10.1103/physrevb.106.115414
https://doi.org/10.1103/physrevb.106.115414
Publikováno v:
PHYSICAL REVIEW B
The nonlocal spin valve (NLSV) enables unambiguous study of spin transport, owing to its ability to isolate pure spin currents. A key principle of NLSV operation is that the ``spin signal'' is invariant under application of in-plane magnetic fields (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e7f922df0e2b94b6df7c272a218e62c8
Publikováno v:
Physical Review B. 103
We report an enhanced magnetoelastic contribution to the Gilbert damping in highly magnetostrictive ${\mathrm{Fe}}_{0.7}{\mathrm{Ga}}_{0.3}$ thin films. This effect is mitigated for perpendicular-to-plane fields, leading to a large anisotropy of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81530076d7a9f445c1b75a9ffbca108e
https://doi.org/10.1103/physrevb.103.l220403
https://doi.org/10.1103/physrevb.103.l220403
Publikováno v:
IEEE Transactions on Electron Devices. 66:5003-5010
Graphene lateral spin valves (LSVs) are promising devices for future memory and magnetic field sensing applications. In this article, we study the dependence of the nonlocal spin resistance, $\Delta {R}_{{\text {NL}}}$ , and the baseline resistance,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f54a04cfb8b1b8357c6f5f7d71ff23a
https://doi.org/10.1109/ted.2019.2943350
https://doi.org/10.1109/ted.2019.2943350