Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Paul A Cain"'
Publikováno v:
SID Symposium Digest of Technical Papers. 51:1279-1281
Autor:
Paul J Cain
Publikováno v:
Legal Education Review, Vol 14, Iss 1 (2003)
German legal education and practice in the area of private law is dominated by a specific problem solving methodology. Some German legal writers even suspect that methodology may have taken control over substantive law. Despite its obvious significan
Externí odkaz:
https://doaj.org/article/a6568682b3104fc2b91a33b6557b5455
Publikováno v:
Proceedings of the International Display Workshops. :287
We propose a scheme for quantum computation using two eigenstates of ammonia or similar molecules. Individual ammonia molecules are confined inside fullerenes and used as two-level qubit systems. Interaction between theseammonia qubits takes place vi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::06e0872e130ded096fc0f3cf16509e66
https://ora.ox.ac.uk/objects/uuid:0e49aced-2415-4dba-8baa-9ee3a50e3545
https://ora.ox.ac.uk/objects/uuid:0e49aced-2415-4dba-8baa-9ee3a50e3545
Autor:
Paul C. Cain
Publikováno v:
SAE Technical Paper Series.
Publikováno v:
Scopus-Elsevier
We present a process for manufacturing printable thin-film transistors (TFTs) that is based on solution processing and direct inkjet printing of polymer semiconductors, dielectrics, and conductors, as well as inorganic nanoparticle conductors. We sho
74.3L:Late-News Paper: Flexible Colour Active Matrix EP Display Using Low Distortion oTFT Backplanes
Publikováno v:
SID Symposium Digest of Technical Papers. 43:1006-1008
We have developed a method of manufacturing low distortion backplanes on plastic substrates. These backplanes allow consistent overlay of frontplanes and printed structures onto the backplane pixels, ensuring a wider compatibility of plastic electron
Publikováno v:
Journal of Applied Physics. 92:346-350
We describe transport measurements on double quantum dot structures formed by trench isolation in a SiGe:Si heterostructure. Three different device geometries are described, and a number of phenomena are observed. Transport measurements at 4.2 K reve
Publikováno v:
Applied Physics Letters. 78:3624-3626
We have observed the splitting of Coulomb oscillation peaks in coupled Si0.9Ge0.1 double quantum dots at 4.2 K. The quantum dots are formed by trench isolation, which means that the dots can be made much smaller than possible with the surface-gated a
Autor:
Paul C. Cain, John Richard Adams
Publikováno v:
SAE Technical Paper Series.