Zobrazeno 1 - 10
of 236
pro vyhledávání: '"Paul, D. J."'
Autor:
Dyer, S., Gallacher, K., Hawley, U., Bregazzi, A., Griffin, P. F., Arnold, A. S., Paul, D. J., Riis, E., McGilligan, J. P.
We demonstrate a tuneable, chip-scale wavelength reference to greatly reduce the complexity and volume of cold-atom sensors. A 1 mm optical path length micro-fabricated cell provides an atomic wavelength reference, with dynamic frequency control enab
Externí odkaz:
http://arxiv.org/abs/2212.02853
Laser cooled atoms have proven transformative for precision metrology, playing a pivotal role in state-of-the-art clocks and interferometers, and having the potential to provide a step-change in our modern technological capabilities. To successfully
Externí odkaz:
http://arxiv.org/abs/2208.00680
Autor:
Prasad, A., Middlemiss, R. P., Anastasiou, K., Bramsiepe, S. G., Noack, A., Paul, D. J., Toland, K., Utting, P. R., Hammond, G. D.
The measurement of tiny variations in local gravity enables the observation of subterranean features. Gravimeters have historically been extremely expensive instruments, but usable gravity measurements have recently been conducted using MEMS (microel
Externí odkaz:
http://arxiv.org/abs/2109.13715
Autor:
Grange, T., Stark, D., Scalari, G., Faist, J., Persichetti, L., Di Gaspare, L., De Seta, M., Ortolani, M., Paul, D. J., Capellini, G., Birner, S., Virgilio, M.
n-type Ge/SiGe terahertz quantum cascade laser are investigated using non-equilibrium Green's functions calculations. We compare the temperature dependence of the terahertz gain properties with an equivalent GaAs/AlGaAs QCL design. In the Ge/SiGe cas
Externí odkaz:
http://arxiv.org/abs/1811.12879
Akademický článek
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Autor:
Pezzoli, F., Giorgioni, A., Gallacher, K., Isa, F., Biagioni, P., Millar, R. W., Gatti, E., Grilli, E., Bonera, E., Isella, G., Paul, D. J., Miglio, Leo
Publikováno v:
Appl. Phys. Lett. 108, 262103 (2016)
We address nonradiative recombination pathways by leveraging surface passivation and dislocation management in micron-scale arrays of Ge crystals grown on deeply patterned Si substrates. The time decay photoluminescence (PL) at cryogenic temperatures
Externí odkaz:
http://arxiv.org/abs/1603.08700
Autor:
Shore, Joel S., Hamam, Hasan J., Chafe, Paul D. J., Labonne, Jonathan D. J., Henning, Paige M., McCubbin, Andrew G.
Publikováno v:
The New Phytologist, 2019 Nov 01. 224(3), 1316-1329.
Externí odkaz:
https://www.jstor.org/stable/26837849
Autor:
Vinh, N Q, Greenland, P T, Litvinenko, K, Redlich, B, van der Meer, A F G, Lynch, S A, Warner, M, Stoneham, A M, Aeppli, G, Paul, D J, Pidgeon, C R, Murdin, B N
Publikováno v:
PNAS Aug 5 2008 vol 105 no 31 10649-10653
One of the great successes of quantum physics is the description of the long-lived Rydberg states of atoms and ions. The Bohr model is equally applicable to donor impurity atoms in semiconductor physics, where the conduction band corresponds to the v
Externí odkaz:
http://arxiv.org/abs/0812.0148
Publikováno v:
J. Phys.: Condens. Matter 20, 415226 (2008)
We observe a complex change in the hopping exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was varied by applying a gate voltage and thermally drifting the ions to
Externí odkaz:
http://arxiv.org/abs/0705.4241
Publikováno v:
Physica B 400, 218 (2007)
Sodium impurities are diffused electrically to the oxide-semiconductor interface of a silicon MOSFET to create an impurity band. At low temperature and at low electron density, the band is split into an upper and a lower sections under the influence
Externí odkaz:
http://arxiv.org/abs/cond-mat/0512124