Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Patsy Cadareanu"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 400-408 (2021)
Three-Independent-Gate Field-Effect Transistors (TIGFETs) are a promising alternative technology that aims to replace or complement CMOS at advanced technology nodes. In this paper, we extracted the parasitic and intrinsic capacitances of a silicon-n
Externí odkaz:
https://doaj.org/article/ce9ad7328d474fedab9cfa4c4c81ea88
Publikováno v:
IEEE Transactions on Electron Devices. 68:4129-4135
Three-independent-gate FETs (TIGFETs) are Schottky-barrier-based devices, which can be reconfigured to be either n- or p-type allowing for innovative compact logic gate implementations. In this article, we present an aggressively scaled 10-nm gate-al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbf9451a5c192c103824aa2ebb3e5317
https://doi.org/10.1109/ted.2021.3089671
https://doi.org/10.1109/ted.2021.3089671
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 400-408 (2021)
Three-Independent-Gate Field-Effect Transistors (TIGFETs) are a promising alternative technology that aims to replace or complement CMOS at advanced technology nodes. In this paper, we extracted the parasitic and intrinsic capacitances of a silicon-n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::674a59ad96c1fa1201b6bd154a737154
https://ieeexplore.ieee.org/document/9393456/
https://ieeexplore.ieee.org/document/9393456/
Publikováno v:
VLSI-SoC: Technology Advancement on SoC Design ISBN: 9783031168178
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ca751fbb37fdfa56890a9bb2eed0de8
https://doi.org/10.1007/978-3-031-16818-5_10
https://doi.org/10.1007/978-3-031-16818-5_10
Publikováno v:
VLSI-SoC
The benefits of steep-Subthreshold Swing (SS) devices, though plentiful at the device-level, have yet to be fully exploited at the circuit-level. This is evident from a look at the Three-Independent-Gate Field-Effect Transistor (TIGFET), a device ren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ca50df7a426ec73230caeeebec5f826
https://doi.org/10.1109/vlsi-soc53125.2021.9606989
https://doi.org/10.1109/vlsi-soc53125.2021.9606989
Publikováno v:
DATE
The shift from centralized cloud to edge computing demands hardware systems with data processing capability at ultra-low power. Reconfigurable solutions such as Field-Programmable Gate Arrays (FPGAs) offer a high flexibility in terms of hardware impl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::899d7701fb91e3b7730654bf89ce063f
https://doi.org/10.23919/date48585.2020.9116478
https://doi.org/10.23919/date48585.2020.9116478
Publikováno v:
IFIP Advances in Information and Communication Technology
27th IFIP/IEEE International Conference on Very Large Scale Integration-System on a Chip (VLSI-SoC)
27th IFIP/IEEE International Conference on Very Large Scale Integration-System on a Chip (VLSI-SoC), Oct 2019, Cusco, Peru. pp.307-322, ⟨10.1007/978-3-030-53273-4_14⟩
VLSI-SoC (Selected Papers)
IFIP Advances in Information and Communication Technology ISBN: 9783030532727
27th IFIP/IEEE International Conference on Very Large Scale Integration-System on a Chip (VLSI-SoC)
27th IFIP/IEEE International Conference on Very Large Scale Integration-System on a Chip (VLSI-SoC), Oct 2019, Cusco, Peru. pp.307-322, ⟨10.1007/978-3-030-53273-4_14⟩
VLSI-SoC (Selected Papers)
IFIP Advances in Information and Communication Technology ISBN: 9783030532727
International audience; The Three-Independent-Gate Field-Effect Transistor (TIGFET) is a promising beyond-CMOS technology which offers multiple modes of operation enabling unique capabilities such as the dynamic control of the device polarity and dua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a3e0aada3186909373084f2b578951bc
https://hal.inria.fr/hal-03476610
https://hal.inria.fr/hal-03476610
Publikováno v:
2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC).
Three-Independent-Gate Field-Effect Transistors (TIGFETs) are Schottky-barrier-based devices which can be reconfigured to be either n- or p-type allowing for innovative compact logic gate implementations. In this paper, we present an aggressively sca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba7611dddf81ae5009b0d3f62a4d0a40
https://doi.org/10.1109/nmdc47361.2019.9084015
https://doi.org/10.1109/nmdc47361.2019.9084015