Zobrazeno 1 - 10
of 145
pro vyhledávání: '"Patrick Verdonck"'
Autor:
C. Adelmann, Veronica Christiano, Patrick Verdonck, Danilo Roque Huanca, Sebastião G. Dos Santos Filho
Publikováno v:
Journal of Integrated Circuits and Systems. 10:49-58
Hafnium aluminates films with 50 mol% of Hf were deposited onto Si(100) using atomic layer deposition. The films were annealed by RTP at 1000 o C for 60 s in pure N 2 or N 2 +5%O 2 and by LASER at 1200 o C for 1ms in pure N 2 . Then, they were charac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c27c8d642093e35f53f9e60de12191f
https://doi.org/10.29292/jics.v10i1.405
https://doi.org/10.29292/jics.v10i1.405
Publikováno v:
Journal of Integrated Circuits and Systems. 1:5-12
The balance of power model is a relatively simple model, which determines the power dissipated both in the plasma bulk and in the plasma sheath, as well as the ion flux and the average energy lost by an electron in the plasma bulk. It requires only t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4aa73055e5421a6a75ea21e459fd5081
https://doi.org/10.29292/jics.v1i2.257
https://doi.org/10.29292/jics.v1i2.257
Publikováno v:
Journal of Integrated Circuits and Systems. 2:67-73
A planar probe and optical emission spectroscopy were employed to analyze parameters in an inductively coupled plasma (ICP). The analyses were performed in Ar, Ar+SF6 and O2 plasmas at 40 mTorr. Typical probe results indicate an ion current of 10-3 A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ef1a184093c768c8b90e5ad1d7d52c3
https://doi.org/10.29292/jics.v2i2.266
https://doi.org/10.29292/jics.v2i2.266
Autor:
Philippe Leray, N. Jourdan, O. Varela Pedreira, E. Dentoni-Litta, Thomas Witters, Werner Gillijns, Nancy Heylen, L. Ramakers, E. Grieten, Zaid El-Mekki, Gayle Murdoch, V. Vega-Gonzalez, Anne-Laure Charley, Ivan Ciofi, Zsolt Tokei, H. Vats, S. V. Gompel, M. H. van der Veen, L. Halipre, J. Swerts, A. Haider, Bilal Chehab, S. Park, N. Bazzazian, Quoc Toan Le, B. De Wachter, T. Peissker, Harinarayanan Puliyalil, Naoto Horiguchi, Miroslav Cupak, J. Versluijs, G. T. Martinez, Y. Kimura, R. Kim, J. Geypen, J. Uk-Lee, N. Nagesh, D. Montero, L. Rynders, M. Ercken, D. Batuk, K. Croes, Patrick Verdonck, Manoj Jaysankar, Y. Drissi, T. Webers
Publikováno v:
2021 IEEE International Interconnect Technology Conference (IITC).
The integration of high aspect-ratio (AR) vias or supervias (SV) with a min CD bottom = 10.5 nm and a max AR = 5.8 is demonstrated, allowing a comparison between ruthenium (Ru) and cobalt (Co) chemical vapor deposition (CVD) metallizations. Ru gave a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::775097fabe7d875876eeac9844668bb1
https://doi.org/10.1109/iitc51362.2021.9537535
https://doi.org/10.1109/iitc51362.2021.9537535
Autor:
Fumihiro Inoue, Patrick Verdonck, Lan Peng, Erik Sleeckx, Praveen Dara, Eric Beyne, Serena Iacovo, Gerald Beyer, Johan Meersschaut, Andy Miller, Alain Phommahaxay
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:P346-P350
ispartof: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY vol:8 issue:6 pages:P346-P350 ispartof: location:MEXICO, Cancun status: published
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e0b1d83339d72566bf324e6ffb1ba7c
https://doi.org/10.1149/2.0241906jss
https://doi.org/10.1149/2.0241906jss
Autor:
Zaid El-Mekki, F. Schleicher, Frederic Lazzarino, D. Trivkovic, Zsolt Tokei, B. De-Wachter, S. V. Gompel, L. Halipre, E. Vancoille, S. Decoster, G. Muroch, Thomas Witters, L. Dupas, O. Varela-Pereira, B. Briggs, Quoc Toan Le, Harinarayanan Puliyalil, Christopher J. Wilson, Philippe Leray, N. Jourdan, I. Demonie, C. Lorant, Joost Bekaert, Nancy Heylen, Y. Kimura, Rogier Baert, M. H. van der Veen, J. Versluijs, Miroslav Cupak, Patrick Verdonck, K. Croes, Manoj Jaysankar, Anne-Laure Charley, J. Heijlen, J. Uk-Lee, Ivan Ciofi, Y. Drissi, V. Vega-Gonzalez, S. Paolillo, H. Vats, D. Montero, L. Rynders, Els Kesters, M. Ercken, A. Lesniewska, R. Kim, Lieve Teugels, T. Webers
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
The integration of high-aspect-ratio (AR) supervias (SV) into a 3 nm node test vehicle, bypassing an intermediate 21 nm pitch layer, is demonstrated. Place-and-route (PnR) simulations of the Power Delivery Network (PDN) proved IR-drop reduction with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d5b5a73112c7be6f5016d4aa4c44eb7
https://doi.org/10.1109/iedm13553.2020.9372096
https://doi.org/10.1109/iedm13553.2020.9372096
Autor:
K. Croes, Philippe Roussel, Patrick Verdonck, A. Lesniewska, Zs. Tokei, Christopher J. Wilson, N. Jourdan, M. H. van der Veen, Davide Tierno, V. Vega Gonzalez
Publikováno v:
IRPS
We evaluate the dielectric reliability performance of 21 nm pitch interconnects integrated in a dense low-k and using a barrierless Ru fill scheme. We show our line-to-line and tip-to-tip TDDB pass 10 years of lifetime at 0.75 V for technology releva
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ea4d5587ed8b7f5250b9669fb704208
https://doi.org/10.1109/irps45951.2020.9129246
https://doi.org/10.1109/irps45951.2020.9129246
Publikováno v:
Theoretical and Applied Fracture Mechanics. 95:194-207
In this study, the mechanical integrity of advanced multilayer nano-interconnects, as metal/dielectric nano-composites, was investigated using a combination of analytical modelling, computational mechanics and experiments. A method for fast derivatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12227ea6a19410680eefc16a80e14823
https://doi.org/10.1016/j.tafmec.2018.03.003
https://doi.org/10.1016/j.tafmec.2018.03.003
Autor:
Alain Phommahaxay, Serena Iacovo, Andy Miller, Eric Beyne, G. Beyer, Soon-Wook Kim, Lan Peng, Erik Sleeckx, Fumihiro Inoue, Patrick Verdonck
Publikováno v:
2019 IEEE 69th Electronic Components and Technology Conference (ECTC).
Nowadays, the direct bonding process is embedded in a BEOL manufacturing process where the maximum temperature is 400C. For certain applications there is the need to lower such thermal budget. One of the first process steps which will be modified wil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89cc268429d9938e61c95ad5e62fe204
https://doi.org/10.1109/ectc.2019.00-16
https://doi.org/10.1109/ectc.2019.00-16
Autor:
Johan Meersschaut, Thierry Conard, Marc Heyns, Ankit Nalin Mehta, Quentin Smets, Thomas Nuytten, Hugo Bender, Wilfried Vandervorst, Tom Schram, Patrick Verdonck, Benjamin Groven, Iuliana Radu, Matty Caymax, Ben Schoenaers, Valeri Afanasʼev, Annelies Delabie, Andre Stesmans
© 2018 American Chemical Society. When two-dimensional (2D) group-VI transition metal dichalcogenides such as tungsten disulfide (WS 2 ) are grown by atomic layer deposition (ALD) for atomic growth control at low deposition temperatures (≤450 °C)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ce9e2d80cd48698bdc296eeef7301266
https://lirias.kuleuven.be/handle/123456789/629350
https://lirias.kuleuven.be/handle/123456789/629350
