Zobrazeno 1 - 10
of 205
pro vyhledávání: '"Patrick Soukiassian"'
Autor:
Tyson C. Back, Shin Mou, Christophe Lubin, A. Pancotti, Donald L. Dorsey, Nicholas Barrett, M. Lachheb, John Boeckl, W. Hamouda, Patrick Soukiassian, G. Geneste, T. Asel
Publikováno v:
Physical Review B. 102
We have studied the surface structure of single-crystal, wide-gap semiconductor $\ensuremath{\beta}\text{\ensuremath{-}}{\mathrm{Ga}}_{2}{\mathrm{O}}_{3}(010)$ using x-ray photoelectron diffraction (XPD), low-energy electron diffraction (LEED), and x
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f001eecd110ff260178861070633320
https://doi.org/10.1103/physrevb.102.245306
https://doi.org/10.1103/physrevb.102.245306
Autor:
Steven B. Fairchild, John Boeckl, Patrick Soukiassian, Tyson C. Back, Dominique Martinotti, Ludovic Douillard, Jeongho Park, William C. Mitchel, Said Elhamri
Publikováno v:
Carbon
Carbon, Elsevier, 2017, 116, pp.303-309. ⟨10.1016/j.carbon.2017.01.072⟩
Carbon, 2017, 116, pp.303-309. ⟨10.1016/j.carbon.2017.01.072⟩
Carbon, Elsevier, 2017, 116, pp.303-309. ⟨10.1016/j.carbon.2017.01.072⟩
Carbon, 2017, 116, pp.303-309. ⟨10.1016/j.carbon.2017.01.072⟩
International audience; The oxide/semiconductor structure is key to controlling current in electronic devices and HfO$_2$ is a common gate material in conventional electronic devices due to its favorable dielectric properties. Graphene devices also r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e275ced4948fa98e81c913a17a093734
https://doi.org/10.1016/j.carbon.2017.01.072
https://doi.org/10.1016/j.carbon.2017.01.072
Publikováno v:
Physical Review Applied. 7
Graphene's exceptional thermal conductivity is of great interest for heat management in advanced electronic devices, yet there are still fundamental issues regarding substrate effects. Using state-of-the-art simulations, the authors study collective
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e317e5c99f442ac98bf85b59ed60750
https://doi.org/10.1103/physrevapplied.7.034030
https://doi.org/10.1103/physrevapplied.7.034030
Autor:
Steven B. Fairchild, D. Martinotti, Ludovic Douillard, Ali Sayir, John J. Boeckl, Tyson C. Back, Marie-Hélène Berger, V. Filipov, Patrick Soukiassian
Publikováno v:
Journal of Materials Science
Journal of Materials Science, Springer Verlag, 2017, 52, pp.5537-5543. ⟨10.1007/s10853-017-0816-0⟩
Journal of Materials Science, 2017, 52, pp.5537-5543. ⟨10.1007/s10853-017-0816-0⟩
Journal of Materials Science, Springer Verlag, 2017, 52, pp.5537-5543. ⟨10.1007/s10853-017-0816-0⟩
Journal of Materials Science, 2017, 52, pp.5537-5543. ⟨10.1007/s10853-017-0816-0⟩
International audience; LaB$_6$–ZrB$_2$ composites obtained by directional solidification at eutectic composition have been investigated by low-energy electron microscopy (LEEM) and thermal emission electron microscopy (ThEEM). The transitions from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e336a4d645c595431cb716a55b5794e
https://hal-cea.archives-ouvertes.fr/cea-01484778/file/Douill.pdf
https://hal-cea.archives-ouvertes.fr/cea-01484778/file/Douill.pdf
Autor:
Gregg Gruen, Marie-Hélène Berger, Andreas K. Schmid, Steven B. Fairchild, Patrick Soukiassian, Ludovic Douillard, Gong Chen, Martin E. Kordesch, Dominique Martinotti, Ali Sayir, P. Terrence Murray, Tyson C. Back
Publikováno v:
2016 29th International Vacuum Nanoelectronics Conference (IVNC).
LaB 6 eutectic materials show promise as a replacement for common thermionic cathode materials. This eutectic system belongs to a class of materials referred to as directionally solidified eutectics (DSEs). LaB 6 DSEs consist of a LaB 6 matrix with a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dafa9be8a1a75a10afffd8ecefc09c7e
https://doi.org/10.1109/ivnc.2016.7551470
https://doi.org/10.1109/ivnc.2016.7551470
Publikováno v:
The Journal of chemical physics. 144(10)
In an effort to extend the reach of current ab initio calculations to simulations requiring millions of configurations for complex systems such as heterostructures, we have parameterized the third-generation Charge Optimized Many-Body (COMB3) potenti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::16f99d328d50c23a0901fa67f27fe97a
https://pubmed.ncbi.nlm.nih.gov/26979702
https://pubmed.ncbi.nlm.nih.gov/26979702
Publikováno v:
MRS Bulletin. 37:1119-1124
Graphene came to the forefront in the nanosciences in the early 2000s, in particular, when high-quality graphene with atomic thickness and two-dimensional extension in the micrometer range was isolated and the resulting novel electronic properties we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::350a4ace44d6d13eba34fc767a26ba1f
https://doi.org/10.1557/mrs.2012.279
https://doi.org/10.1557/mrs.2012.279
Publikováno v:
Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics, IOP Publishing, 2015, 48 (50), ⟨10.1088/0022-3727/48/50/500301⟩
Journal of Physics D: Applied Physics, 2015, 48 (50), ⟨10.1088/0022-3727/48/50/500301⟩
Journal of Physics D: Applied Physics, IOP Publishing, 2015, 48 (50), ⟨10.1088/0022-3727/48/50/500301⟩
Journal of Physics D: Applied Physics, 2015, 48 (50), ⟨10.1088/0022-3727/48/50/500301⟩
100 years have passed since the discovery of x-ray diffraction by von Laue, Knipping and Friedrich. The scientific world owes a lot to Rontgen for the discovery of x-rays in 1895 and with the research efforts of W L and W H Bragg in 1912, the concept
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a7521595264396366bca6a758a1b549f
https://hal-cea.archives-ouvertes.fr/cea-01485580
https://hal-cea.archives-ouvertes.fr/cea-01485580
Publikováno v:
Surface Science. 605:L6-L11
We use scanning tunneling microscopy and spectroscopy to study defects on epitaxial graphene grown on a 4H-SiC(000-1) C-face substrate. At the graphene/SiC interface, we discover a few isolated small areas covered by nano-objects confined vertically
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f5cbee187d677c123d9702daec5e8f2
https://doi.org/10.1016/j.susc.2011.01.006
https://doi.org/10.1016/j.susc.2011.01.006
Publikováno v:
Surface Science. 604:1127-1134
InAsSbP quantum dots (QDs) and nano-pits (NPs) are grown on a InAs(100) surface by liquid phase epitaxy (LPE). Their morphology, dimensions and distribution density are investigated by high resolution scanning electron microscopy, Fourier-transform i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f90ab4ab19340d8f1709d537c90f5b10
https://doi.org/10.1016/j.susc.2010.03.027
https://doi.org/10.1016/j.susc.2010.03.027