Zobrazeno 1 - 10
of 120
pro vyhledávání: '"Patrick Schiavone"'
Autor:
Patrick Schiavone, Jonathan Pradelles, Thiago Figueiro, Jessy Bustos, Mohamed Abaidi, Jordan Belissard, Nivea Schuch, Matthieu Milléquant, Estelle Guyez, L. Perraud, Sébastien Bérard-Bergery, Aurélie Le Pennec, Aurélien Fay, Jean-Baptiste Henry, E. Sezestre
Publikováno v:
Proc. SPIE
SPIE Advanced Lithography
SPIE Advanced Lithography, Feb 2021, Online Only, France. pp.30, ⟨10.1117/12.2583843⟩
SPIE Advanced Lithography
SPIE Advanced Lithography, Feb 2021, Online Only, France. pp.30, ⟨10.1117/12.2583843⟩
2D curvilinear patterns are more and more present in the lithography landscape. For the related devices, the line edge roughness (LER) is, as well as for lines and spaces, a critical figure of merit. In this article we propose to use a dedicated edge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f428faf8e482054b9e9294453cc00305
https://hal.archives-ouvertes.fr/hal-03156564
https://hal.archives-ouvertes.fr/hal-03156564
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, Feb 2021, Online Only, France. pp.115, ⟨10.1117/12.2584617⟩
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, Feb 2021, Online Only, France. pp.115, ⟨10.1117/12.2584617⟩
In semiconductor fabs, top-down critical dimension scanning electron microscopes (CD-SEMs) are key enablers for metrology and process control, and in order to continue to address the increasing metrology requirements of the semiconductor industry, ad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::42946132a8c15301fe1cdbbca85edfe6
https://hal.archives-ouvertes.fr/hal-03156573
https://hal.archives-ouvertes.fr/hal-03156573
Autor:
Francois Weisbuch, Jirka Schatz, Thiago Figueiro, Nivea Schuch, Sylvio Mattick, Patrick Schiavone
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV
SPIE Advanced Lithography
SPIE Advanced Lithography, Feb 2021, Online Only, France. ⟨10.1117/12.2583715⟩
SPIE Advanced Lithography
SPIE Advanced Lithography, Feb 2021, Online Only, France. ⟨10.1117/12.2583715⟩
International audience; Background: The control and the characterization of semiconductor very fine devices on a wafer are commonly performed by mean of a scanning electron microscope (SEM) to derive a critical dimension (CD) from a pair of parallel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5148f1883f7f54b2a8138f2ad56a2031
https://hal.science/hal-03156583
https://hal.science/hal-03156583
Autor:
Thiago Figueiro, Patrick Schiavone, Charles Valade, B. Le-Gratiet, Nivea Schuch, Stéphanie Audran, J. Ducote, C. Gardin, Matthieu Milléquant, R. Bouyssou, Alain Ostrovsky, Jordan Belissard
Publikováno v:
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, Feb 2021, Online Only, France. pp.29, ⟨10.1117/12.2584364⟩
Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV, Feb 2021, Online Only, France. pp.29, ⟨10.1117/12.2584364⟩
Despite of the fact that thousands of CD-SEM (critical dimension scanning electron microscope) images are acquired in a daily basis in a fab, limited metrology is performed. Usually these images will not serve other purposes after they are collected
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3d618cd1dedb2c85efa6fd9c45b43c5d
https://hal.archives-ouvertes.fr/hal-03156590
https://hal.archives-ouvertes.fr/hal-03156590
Autor:
R. Bouyssou, J. Ducote, B. Le-Gratiet, Alain Ostrovsky, Paolo Petroni, Charlotte Beylier, Vincent Annezo, Matthieu Milléquant, C. Gardin, L. Schneider, Thiago Figueiro, Patrick Schiavone, Nivea Schuch
Publikováno v:
Proceedings SPIE Volume 11325
Metrology, Inspection, and Process Control for Microlithography XXXIV
Metrology, Inspection, and Process Control for Microlithography XXXIV, Feb 2020, San Jose, United States. pp.3, ⟨10.1117/12.2551907⟩
Metrology, Inspection, and Process Control for Microlithography XXXIV
Metrology, Inspection, and Process Control for Microlithography XXXIV, Feb 2020, San Jose, United States. pp.3, ⟨10.1117/12.2551907⟩
Galileo Galilei once quoted: “Measure what is measurable, and make measurable what is not so”. In silicon manufacturing R&D phase, it often happens that engineers would like to access some parameter values that are not easy, even impossible to me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::13ae227f5f46b56000f77b09b27ff4f9
https://hal.archives-ouvertes.fr/hal-03093860
https://hal.archives-ouvertes.fr/hal-03093860
Autor:
Charlotte Beylier, Christian Gardin, B. Le Gratiet, Alexandre Chagoya-Garzon, R. Bouyssou, J. Ducote, Matthieu Milléquant, Christophe Dezauzier, Alain Ostrovsky, Patrick Schiavone, Paolo Petroni
Publikováno v:
Proc.SPIE
Metrology, Inspection, and Process Control for Microlithography XXXIII
Metrology, Inspection, and Process Control for Microlithography XXXIII, Feb 2019, San Jose, United States. pp.109591M, ⟨10.1117/12.2511626⟩
Metrology, Inspection, and Process Control for Microlithography XXXIII
Metrology, Inspection, and Process Control for Microlithography XXXIII, Feb 2019, San Jose, United States. pp.109591M, ⟨10.1117/12.2511626⟩
In semiconductor fabs, electron microscopes are key equipment for metrology, failure analysis, physical characterization and defect review classification. In a wafer fab like ST Crolles 300mm, CDSEMs are generating more than 20 Million of images per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fcb8a6dfcee1ab055cfbacd2635fa899
https://hal.archives-ouvertes.fr/hal-02326560
https://hal.archives-ouvertes.fr/hal-02326560
Publikováno v:
Proc. SPIE
Metrology, Inspection, and Process Control for Microlithography XXXIII
Metrology, Inspection, and Process Control for Microlithography XXXIII, Feb 2019, San Jose, United States. pp.1095918, ⟨10.1117/12.2515181⟩
Metrology, Inspection, and Process Control for Microlithography XXXIII
Metrology, Inspection, and Process Control for Microlithography XXXIII, Feb 2019, San Jose, United States. pp.1095918, ⟨10.1117/12.2515181⟩
Nowadays, the accuracy of the metrology is becoming more and more a critical issue for microelectronic manufacturing as new technology nodes necessitate more and more rigorous process control. Scanning Electron Microscope (SEM) is the equipment most
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22d8782352824238f532300aa6061825
https://hal.archives-ouvertes.fr/hal-02326619
https://hal.archives-ouvertes.fr/hal-02326619
Publikováno v:
Proc. SPIE
34th European Mask and Lithography Conference
34th European Mask and Lithography Conference, Jun 2018, Grenoble, France. pp.107750K, ⟨10.1117/12.2326599⟩
34th European Mask and Lithography Conference
34th European Mask and Lithography Conference, Jun 2018, Grenoble, France. pp.107750K, ⟨10.1117/12.2326599⟩
Designs for photonic devices on silicon relies on non-Manhattan features such as curves and a wide variety of angles. Reticle Enhancement Techniques (RET) that are commonly used for CMOS manufacturing now are applied to curvilinear data patterns for
Autor:
Alexis Girodon, Sébastien Bayle, Jacky Chartoire, Patrick Schiavone, Aurélien Fay, Jérôme Hazart
Publikováno v:
Proc. SPIE
Photomask Technology
Photomask Technology, Sep 2018, Monterey, United States. pp.108101D, ⟨10.1117/12.2501823⟩
Photomask Technology
Photomask Technology, Sep 2018, Monterey, United States. pp.108101D, ⟨10.1117/12.2501823⟩
Electron beam Mask Writers based on Variable Shaped Beam lithography (VSB) technology write designs with elementary fragments called shots. The electron dose assigned to each shot is usually defined by mean of a classical e-beam Proximity Effects Cor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b6217bf28e11132fff145f22059e9427
https://hal.science/hal-02326592
https://hal.science/hal-02326592
Autor:
Sergei V. Postnikov, Yasuo Kon, Kenji Kono, Thiago Figueiro, Luc Martin, Yasunari Tsukino, Patrick Schiavone, Paolo Petroni
Publikováno v:
Proc. SPIE
Photomask Japan 2018
Photomask Japan 2018, Apr 2018, Yokohama, Japan. pp.19, ⟨10.1117/12.2501785⟩
Photomask Japan 2018
Photomask Japan 2018, Apr 2018, Yokohama, Japan. pp.19, ⟨10.1117/12.2501785⟩
The specifications performance data for the latest generation system are compared to prior generations. These results are shown for both missing pattern (or hard) and unknown contamination (or soft) defects of various classifications in different pat