Zobrazeno 1 - 10
of 70
pro vyhledávání: '"Patrick S. Lysaght"'
Autor:
William A. Manners, Mehmet Sahiner, J. Price, Joseph C. Woicik, Christopher J. Reehil, A. Klump, Arya Nabizadeh, Paul Kirsch, Patrick S. Lysaght
Publikováno v:
Applied Physics A. 117:93-96
The local symmetries around the Hf sites in thin films of Hf1−xZrxO2/Si(100) were probed using grazing incidence extended X-ray absorption fine-structure spectroscopy (EXAFS). The effects of the Zr incorporation on the local crystal symmetries were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a392df60ce10e0c578cf5f6a800edaf2
https://doi.org/10.1007/s00339-013-8208-z
https://doi.org/10.1007/s00339-013-8208-z
Autor:
Conan Weiland, Abdul K. Rumaiz, Patrick S. Lysaght, B. A. Karlin, Joseph C. Woicik, Daniel A. Fischer
Publikováno v:
Journal of Electron Spectroscopy and Related Phenomena. 190:193-200
We present an overview of the National Institute of Standards and Technology beamline X24A at the National Synchrotron Light Source at Brookhaven National Lab and recent work performed at the facility. The beamline is equipped for HAXPES measurements
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d23f8932ae2482c79dfdbfac2cda386a
https://doi.org/10.1016/j.elspec.2013.04.008
https://doi.org/10.1016/j.elspec.2013.04.008
Autor:
Patrick S. Lysaght, Daniel A. Fischer, Brian J. Schultz, Sarbajit Banerjee, David Prendergast, Cherno Jaye
Publikováno v:
Chem. Sci.. 4:494-502
The nature of chemical bonding at graphene–metal interfaces is intriguing from a fundamental perspective and has great relevance for contacts to novel spintronics and high-frequency electronic devices. Here, we use near-edge X-ray absorption fine s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba581e0d210dc5a394f95b100abb78e6
https://doi.org/10.1039/c2sc21018e
https://doi.org/10.1039/c2sc21018e
Publikováno v:
physica status solidi c. 9:2184-2188
The local structural characterization of novel contact materials (nickel silicides) on N2+ implanted Si(100) substrates have been performed using Extended X-ray-Absorption Fine-Structure Spectroscopy (EXAFS). The crystal phases of nickel silicides th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::490ec96e3fe646fff62fd761e81f5993
https://doi.org/10.1002/pssc.201200250
https://doi.org/10.1002/pssc.201200250
Autor:
R. Jammy, Chanro Park, Paul Kirsch, Mehmet Sahiner, Jiacheng Huang, Joseph C. Woicik, Patrick S. Lysaght, Gennadi Bersuker, W. Taylor
Publikováno v:
physica status solidi (a). 209:679-682
The information on the subtle local structural modifications around the Hf atom in HfO2 high-k dielectric stacks has been demonstrated to be crucial in determining the resulting electronic properties of the complementary metal oxide (CMOS) devices. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::160cf68f2687fd9289ee314667865219
https://doi.org/10.1002/pssa.201100669
https://doi.org/10.1002/pssa.201100669
Autor:
Joseph C. Woicik, Patrick S. Lysaght
Publikováno v:
Springer Series in Surface Sciences ISBN: 9783319240411
During the past decade, the semiconductor industry has experienced an unprecedented paradigm shift toward focused materials screening in order to keep pace with the rapid rate of device scaling dictated by Moore’s Law. In addition, new device archi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e17f4d34bd277c9a04ea0a30162bc5b
https://doi.org/10.1007/978-3-319-24043-5_16
https://doi.org/10.1007/978-3-319-24043-5_16
Autor:
Casey Smith, Shin-Shem Pei, Cherno Jaye, Sarbajit Banerjee, Chanro Park, Wei Wu, Vincent Lee, Zhihong Liu, Patrick S. Lysaght, Qingkai Yu, Daniel A. Fischer, Jiming Bao
Publikováno v:
The Journal of Physical Chemistry Letters. 1:1247-1253
Interfacial interactions at graphene/metal and graphene/dielectric interfaces are likely to profoundly influence the electronic structure of graphene. We present here the first angle-resolved near-edge X-ray absorption fine structure (NEXAFS)spectros
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5274b6675983619961aad7e4ff30863
https://doi.org/10.1021/jz100209h
https://doi.org/10.1021/jz100209h
Autor:
T. S. Böscke, Patrick S. Lysaght, Pui Yee Hung, Matthew Wormington, Paul Kirsch, Hsing-Huang Tseng, David Bowen, Raj Jammy
Publikováno v:
ECS Transactions. 16:149-152
This study presents the application of X-ray metrology for phase engineering of high-k materials. In particular, grazing angle X-ray diffraction (GIXRD) is used to measure the phase and lattice constants of HfO2 doped with varying amounts of SiO2. Us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26e1e9ee0bed6b929ce2479fd8815f53
https://doi.org/10.1149/1.2981596
https://doi.org/10.1149/1.2981596
Autor:
Patrick S. Lysaght, Husam N. Alshareef, Seung-Chul Song, Chanro Park, Dim-Lee Kwong, Kisik Choi, Gennadi Bersuker, H. Rusty Harris, Hong-bae Park, Huang-Chun Wen, Byoung Hun Lee, Raj Jammy, Prashant Majhi, Hiro Niimi, H. Luan
Publikováno v:
Microelectronic Engineering. 85:2-8
A review of literature combined with recent experimental results addressing the intrinsic and extrinsic factors controlling the effective work function (EWF) of metal gate electrodes on Hf-based high-K dielectrics is discussed. Through a systematic s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0dfc7b06696d5749bb858d55f6c4b1b0
https://doi.org/10.1016/j.mee.2007.05.006
https://doi.org/10.1016/j.mee.2007.05.006
Publikováno v:
Journal of Non-Crystalline Solids. 354:399-403
A series of 1.4, 1.8, and 4.0 nm thick HfO 2 films deposited on Si(1 0 0) substrates have been measured by extended X-ray absorption fine-structure prior to anneal processing, following a standard post deposition anneal of 700 °C for 60 s in NH 3 am
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96277fdd565fba8c0fa59714be6f12ac
https://doi.org/10.1016/j.jnoncrysol.2007.07.050
https://doi.org/10.1016/j.jnoncrysol.2007.07.050