Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Patrick Rode"'
Publikováno v:
Insects, Vol 15, Iss 9, p 709 (2024)
In the northeastern USA, the distribution of lone star ticks (Amblyomma americanum) has expanded northward in recent decades, overlapping with the range of blacklegged ticks (Ixodes scapularis). Blacklegged ticks carry pathogens for diseases such as
Externí odkaz:
https://doaj.org/article/cd620103031145d08f16f86674da53ba
Autor:
Henning Riechert, Philipp Drechsel, Martin Albrecht, Peter Stauss, Toni Markurt, Werner Bergbauer, Patrick Rode, S. Fritze, Alois Krost, Ulrich Dr. Steegmüller, Tobias Schulz
Publikováno v:
physica status solidi (a). 209:427-430
In this work we focus on the impact of different buffer and nucleation layers on the corresponding crystalline quality of gallium nitride (GaN), grown by metal-organic chemical vapour deposition (MOCVD). In situ curvature measurements, X-ray diffract
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dc45b8bd7e1ed9d19ac0f0e98783a32
https://doi.org/10.1002/pssa.201100477
https://doi.org/10.1002/pssa.201100477
Autor:
Berthold Hahn, Dieter Eißler, Karl Engl, Alexander Heindl, Patrick Rode, Stefan Illek, Andreas E. Plößl, Ivar Tangrin, Christoph Klemp, Klaus Streubel, Johannes Baur, Volker Härle
Publikováno v:
ECS Transactions. 33:613-624
Wafer bonding based layer transfer approaches permit the fabrication of powerful volume or surface-emitting light-emitting diodes (LEDs). Here we briefly review the basic approaches taken and show some exemplary results of our metal-bonded UX:3-LEDs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcda27376cdcf6f9b53c62cbcf193c2f
https://doi.org/10.1149/1.3483553
https://doi.org/10.1149/1.3483553
Autor:
Phillipp Drechsel, Andreas Biebersdorf, Bastian Galler, Ulrich Dr. Steegmüller, Martin Mandl, R. Windisch, Patrick Rode, Peter Stauss, Ansgar Laubsch
Publikováno v:
physica status solidi c. 8:2396-2398
In this study we have grown dual wavelength epitaxial LED layer structures by MOCVD. A secondary InGaN MQW is added to the layer structure to optically convert a certain fraction of photons which have been electrically generated in the primary InGaN-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc93497492ac9f6525d2785cc69946e7
https://doi.org/10.1002/pssc.201001073
https://doi.org/10.1002/pssc.201001073
Autor:
Ki-Dong Lee, Christopher Kölper, Martin Mandl, Werner Bergbauer, Babak Heidari, Torbjörn Eriksson, Patrick Rode, Martin Strassburg
Publikováno v:
Alternative Lithographic Technologies III.
Nano Imprint Lithography (NIL) is a promising technology that combines low costs with high throughput for fabrication of sub 100 nm scale features. One of the first application areas in which NIL is used is manufacturing of various types of LED's. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1343d09107e9f5bbef32c6d66373bff
https://doi.org/10.1117/12.879368
https://doi.org/10.1117/12.879368
Autor:
R. Monnard, Patrick Rode, P. Stauss, Bastian Galler, Michael Binder, Matthias Sabathil, Werner Bergbauer, Joachim Wagner, Berthold Hahn, S. Froehlich, Philipp Drechsel
Publikováno v:
Applied Physics Letters. 101:131111
High-efficiency InGaN-based light-emitting diodes have been grown on (111) silicon substrates and investigated with regard to efficiency and carrier lifetime as a function of current density. Using a single quantum well active layer ensures a well-de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f26f5e15c193f66b5db9b6403f0e912
https://doi.org/10.1063/1.4754688
https://doi.org/10.1063/1.4754688
Autor:
Philipp Drechsel, Alois Krost, Jürgen Bläsing, Toni Markurt, Armin Dadgar, Tobias Schulz, Patrick Rode, S. Fritze, Peter Stauss, Martin Albrecht
Publikováno v:
Journal of Applied Physics. 111:124505
Thin AlGaN interlayers have been grown into a thick GaN stack on Si substrates to compensate tensile thermal stress and significantly improve the structural perfection of the GaN. In particular, thicker interlayers reduce the density in a-type disloc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c125c0c031e276872291091bf5ba7574
https://doi.org/10.1063/1.4729044
https://doi.org/10.1063/1.4729044